The STTH306, which is using ST Turbo 2 600V
technology, is specially suited for use in switching
power supplies, inverters and as a free wheeling
diode.
DO-201AD
STTH306
ABSOLUTE RATINGS (limiting values)
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Repetitive peak reverse voltage600V
RMS forward current8A
Average forward currentTl = 80°Cδ =0.53A
Surge non repetitive forwardcurrenttp = 10 msSinusoidal55A
Storage temperature range- 65 + 175°C
TjMaximum operatingjunction temperature+ 175°C
November 2001 - Ed: 2A
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STTH306
THERMAL PARAMETERS
SymbolParameterMaximumUnit
R
R
th (j-l)
th (j-a)
Junction to lead20°C/W
Junction to ambient75
STATIC ELECTRICAL CHARACTERISTICS
SymbolParameterTests conditionsMin.Typ.Max.Unit
I
R
V
Reverse leakage
current
Forward voltage dropIF= 3 ATj = 25°C1.7V
F
VR= 600VTj = 25°C3µA
Tj = 150°C15100
Tj = 150°C1.01.25
To evaluate the maximumconduction losses use the following equation :
P=1.03xI
F(AV)
+ 0.09 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
SymbolTests conditionsMin.Typ.Max.Unit
trrI
tfrI
V
FP
= 0.5 A Irr = 0.25 A IR= 1ATj = 25°C30ns
F
I
=1AdIF/dt=-50A/µsVR= 30V35
F
=3AdIF/dt = 100 A/µs
F
VFR=1.1xVFmax
Tj = 25°C100ns
10V
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STTH306
Fig.1: Conductionlossesversus average current.
P(W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.00.51.01.52.02.53.03.54.0
δ = 0.05
δ = 0.1
δ = 0.2
IF(av)(A)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Fig. 3: Relative variation of thermal impedance
junction ambient versus pulse duration (epoxy
FR4, Leads = 10mm)
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
0.0
1.E-011.E+001.E+011.E+021.E+03
Single pulse
tp(s)
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward
current.
IFM(A)
50
45
40
35
30
25
20
15
10
5
0
0.00.51.01.52.02.53.03.54.0
(Maximum values)
Tj=150°C
Tj
(Typical values)
Tj=150°C
VFM(V)
Tj=25°C
(Maximum values)
Fig. 4: Peak reverse recovery current versus
/dt (90% confidence).
dI
F
IRM(A)
14
VR=400V
Tj=125°C
12
10
8
IF=0.25 x IF(av)
6
4
2
0
050100150 200250300 350400450500
IF=0.5 x IF(av)
dIF/dt(A/µs)
IF=2 x IF(av)
IF=IF(av)
Fig. 5:Reverse recovery time versus dIF/dt
(90% confidence).
trr(ns)
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
050100150200250300350 400450 500
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
dIF/dt(A/µs)
VR=400V
Tj=125°C
Fig. 6: Reverse recovery charges versus dIF/dt
(90% confidence).
Qrr(nC)
500
VR=400V
450
Tj=125°C
400
350
300
250
200
150
100
50
0
050100150 200250300350400450 500
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
dIF/dt(A/µs)
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STTH306
Fig. 7:Softness factor versus dIF/dt (typical
values).
S factor
4.0
IF=IF(av)
VR=400V
Tj=125°C
3.0
2.0
1.0
dIF/dt(A/µs)
0.0
050100150200250300350400450500
Fig. 9: Transient peak forward voltage versus
/dt (90% confidence).
dI
F
VFp(V)
25
IF=IF(av)
Tj=125°C
20
15
10
5
0
020406080100120140160180200
dIF/dt(A/µs)
Fig.8:Relativevariationofdynamic
parameters versus junction temperature.
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
255075100125
S factor
IRM
Qrr
Tj(°C)
IF=IF(av)
VR=400V
Reference: Tj=125°C
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
tfr(ns)
200
180
160
140
120
100
80
60
40
20
0
020406080100120140160180 200
dIF/dt(A/µs)
IF=IF(av)
VFR=1.1 x VF max.
Tj=125°C
Fig. 11:Junction capacitance versus reverse
voltage applied (typical values).
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