Datasheet STTH6012 Datasheet (ST)

Main product characteristics

STTH6012

Ultrafast recovery - 1200 V diode

I

F(AV)

V

RRM

T

j

(typ) 1.30 V

V

F

(typ) 50 ns

t

rr

60 A

1200 V

175° C

Features and benefits

■ Ultrafast, soft recovery

■ Very low conduction and switching losses

■ High frequency and/or high pulsed current

operation

■ High reverse voltage capability

■ High junction temperature

Description

The high quality design of this diode has
produced a device with low leakage current,
regularly reproducible characteristics and intrinsic
ruggedness. These characteristics make it ideal
for heavy duty applications that demand long term
reliability.

KA

A

K

DO-247

STTH6012W

Order codes

Part Number Marking

STTH6012W STTH6012W

Such demanding applications include industrial
power supplies, motor control, and similar
mission-critical systems that require rectification
and freewheeling. These diodes also fit into
auxiliary functions such as snubber, bootstrap,
and demagnetization applications.

The improved performance in low leakage
current, and therefore thermal runaway guard
band, is an immediate competitive advantage for
this device.

March 2006 Rev 1 1/8

www.st.com

8

Characteristics STTH6012

1 Characteristics

Table 1. Absolute ratings (limiting values at 25° C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FRM

I

FSM

T

Table 2. Thermal parameter

Repetitive peak reverse voltage 1200 V

RMS forward current 80 A

Average forward current, δ = 0.5 Tc = 90° C 60 A

Repetitive peak forward current tp = 5 µs, F = 5 kHz square 500 A

Surge non repetitive forward current tp = 10 ms Sinusoidal 400 A

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

T

j

Symbol Parameter Value Unit

R

th(j-c)

Table 3. Static electrical characteristics

Junction to case 0.6 °C/W

Symbol Parameter Test conditions Min. Typ Max. Unit

T

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25° C

j

= 125° C 30 300

T

j

T

= 25° C

j

= 150° C 1.30 1.95

T

j

= V

V

R

= 60 A

I

F

RRM

30

2.25

µA

VTj = 125° C 1.35 2.05

To evaluate the conduction losses use the following equation:
P = 1.50 x I

2/8

F(AV)

+ 0.0075 I

F2(RMS)

STTH6012 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter

t

Reverse recovery time

rr

I

Reverse recovery current

RM

S Softness factor

t

Forward recovery time

fr

V

Forward recovery voltage

FP

Figure 1. Conduction losses versus

average current

P(W)

160

140

120

100

80

60

40

20

0

δ = 0.05

0 1020304050607080

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

Test conditions

IF = 1 A, dIF/dt = -50 A/µs,
VR = 30 V, Tj = 25° C

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25° C

V

R

= 1 A, dIF/dt = -200 A/µs,

I

F

VR = 30 V, Tj = 25° C

I

= 60 A, dIF/dt = -200 A/µs,

F

VR = 600 V, Tj = 125° C

= 60 A, dIF/dt = -200 A/µs,

I

F

= 600 V, Tj = 125° C

V

R

= 60 A dIF/dt = 100 A/µs

I

F

VFR = 1.5 x V

= 60 A, dIF/dt = 100 A/µs,

I

F

= 25° C

T

j

, Tj = 25° C

Fmax

Figure 2. Forward voltage drop versus

I (A)

FM

200

180

δ = 1

T

tp

160

140

120

100

80

60

(maximum values)

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0

forward current

T=150°C

j

(typical values)

T=150°C

j

Min. Typ Max. Unit

125

63 85

ns

50 70

32 45 A

1

750 ns

4.5 V

T= 25°C

j

(maximum values)

V (V)

FM

3/8

Characteristics STTH6012

Figure 3. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

0.9

0.8

0.7

0.6

0.5

0.4

0.3

Single pulse

0.2

0.1

0.0

1.E-03 1.E-02 1.E-01 1.E+00

t (s)

p

Figure 5. Reverse recovery time versus

dI

/dt (typical values)

F

t (ns)

rr

1000

900

800

I =2 x I

700

600

500

400

300

200

0 50 100 150 200 250 300 350 400 450 500

F F(AV)

I=I

F F(AV)

dI /dt(A/µs)

F

I =0.5 x I

F F(AV)

V =600V

R

T=125°C

j

Figure 4. Peak reverse recovery current

versus dI

I (A)

RM

80

V =600V

R

T=125°C

j

70

60

50

I =0.5 x I

40

30

20

10

F F(AV)

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

I =2 x I

F F(AV)

I=I

F F(AV)

dI /dt(A/µs)

F

Figure 6. Reverse recovery charges versus

dIF/dt (typical values)

Q (µC)

rr

12

V =600V

R

T=125°C

j

10

8

6

4

2

0

0 50 100 150 200 250 300 350 400 450 500

I =2 x I

F F(AV)

I=I

F F(AV)

I =0.5 x I

F F(AV)

dI /dt(A/µs)

F

Figure 7. Softness factor versus dIF/dt

(typical values)

S factor

2.00

1.75

1.50

1.25

1.00

0.75

dI /dt(A/µs)

0.50

0 50 100 150 200 250 300 350 400 450 500

F

4/8

I 2xI

≤

F F(AV)

V =600V

R

T=125°C

j

Figure 8. Relative variations of dynamic

parameters versus junction
temperature

2.00

1.75

1.50

1.25

1.00

0.75

0.50

0.25

0.00

25 50 75 100 125

S factor

t

I

RM

Q

RR

rr

T (°C)

j

I=I

F F(AV)

V =600V

R

Reference:T =125°C

j

STTH6012 Characteristics

Figure 9. Transient peak forward voltage

versus dI

V (V)

FP

25

I=I

F F(AV)

T=125°C

j

20

15

10

5

0

0 100 200 300 400 500

/dt (typical values)

F

dI /dt(A/µs)

F

Figure 11. Junction capacitance versus

reverse voltage applied (typical
values)

C(pF)

1000

F=1MHz

V =30mV

OSC RMS

T=25°C

j

Figure 10. Forward recovery time versus dI

(typical values)

t (ns)

fr

1400

1200

1000

800

600

400

dI /dt(A/µs)

200

0 100 200 300 400 500

F

I=I

F F(AV)

V =1.5 x V max.

FR F

T=125°C

j

F

/dt

100

V (V)

10

1 10 100 1000

R

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Package information STTH6012

2 Package information

Epoxy meets UL94, V0

Cooling method: by conduction (C)

Recommended torque value: 0.80 Nm

Maximum torque value: 1.0 Nm

Table 5. DO-247 dimensions

DIMENSIONS

REF.

Millimeters Inches

Min. Max Min. Max.

A 4.85 5.15 0.191 0.203

D 2.20 2.60 0.086 0.102

V

V

Dia

E 0.40 0.80 0.015 0.031

F 1.00 1.40 0.039 0.055

F2 2.00 0.078

H

A

F3 2.00 2.40 0.078 0.094

G 10.90 0.429

L5

L

L2

L4

F2

L1

L3

V2

F3

F

G

D

ME

H 15.45 15.75 0.608 0.620

L 19.85 20.15 0.781 0.793

L1 3.70 4.30 0.145 0.169

L2 18.50 0.728

L3 14.20 14.80 0.559 0.582

L4 34.60 1.362

L5 5.50 0.216

M 2.00 3.00 0.078 0.118

V5° 5°

In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.

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V2 60° 60°

Dia. 3.55 3.65 0.139 0.143

STTH6012 Ordering information

3 Ordering information

Part Number Marking Package Weight Base qty Delivery mode

STTH6012W STTH6012W DO-247

4 Revision history

Date Revision Description of Changes

02-Mar-2006 1 First issue.

4.4 g

30 Tube

7/8

STTH6012

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