Datasheet STTH16003 Datasheet (ST)

STTH16003

High frequency secondary rectifier

Features

■ Combines highest recovery and reverse

voltage performance

■ Ultra-fast, soft and noise-free recovery

■ Insulated package: ISOTOP

– insulated voltage: 2500 V rms
– capacitance: < 45 pF

■ Low inductance and low capacitance allow

simplified layout

Description

Dual rectifiers suited for switch mode power
supply and high frequency DC to DC converters.

Packaged in ISOTOP, this device is intended for
use in low voltage, high frequency inverters, free
wheeling operation, welding equipment and
telecom power supplies.

A1

A2

K1

K2

A2

ISOTOP™

STTH16003TV1

Table 1. Device summary

I

F(AV)

V

RRM

T

j

(typ) 0.95 V

V

F

(typ) 80 ns

t

rr

K1

K2

A1

2 x 60 A

300 V

150 °C

TM: ISOTOP is a registered trademark of

STMicroelectronics

June 2008 Rev 5 1/7

www.st.com

7

Characteristics STTH16003

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode, T

Symbol Parameter Value Unit

= 25 °C unless otherwise stated)

amb

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RSM

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 300 V

RMS forward current 180 A

Average forward current Tc = 85°C δ = 0.5

Per diode
Per device

Surge non repetitive forward current tp = 10 ms Sinusoidal 800 A

Non repetitive peak reverse current tp = 100 µs square 5 A

Storage temperature range -55 to + 150 °C

stg

Maximum operating junction temperature 150 °C

T

j

60

160

Symbol Parameter Maximum Unit

Per diode 0.7

R

R

th(j-c)

th(c)

Junction to case

Coupling 0.1

When the diodes 1 and 2 are used simultaneously:

Δ T

j (diode1)

Table 4. Static electrical characteristics (per diode)

= P

(diode1)

x R

th(j-c) (per diode)

+ P

(diode2)

x R

th(c)

A

°C/WTotal 0.4

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

(2)

Forward voltage drop

F

1. to evaluate the maximum conduction losses use the following equation:
P = 0.75 x I

F(AV)

+ 0.0025 I

F2(RMS)

T

= 25 °C

j

= 125 °C 0.2 2

T

j

T

= 25 °C

j

= 125 °C 0.8 0.95

T

j

= 300 V

V

R

= 80 A

I

F

200 µA

1.2

2/7

mA

V

STTH16003 Characteristics

Table 5. Recovery characteristics

Symbol Parameter

t

Reverse recovery time Tj = 25 °C

rr

Forward recovery time

t

fr

V

I

S

Forward recovery voltage 5 V

FP

Reverse recovery current

RM

factor

T

Tj = 125 °C

Figure 1. Conduction losses versus

average current (per diode)

= 25 °C

j

Test conditions

I

= 0.5 A, Irr = 0.25 A

F

Min. Typ Max. Unit

IR = 1 A

= 1 A, dIF/dt = 50 A/µs,

I

F

= 30 V

V

R

= 80 A dIF/dt = 200 A/µs

I

F

VFR = 1.1 x V

I

= 60 A, dIF/dt = 200 A/µs,

F

Vcc = 200 V

Fmax

0.3 -

Figure 2. Forward voltage drop versus

forward current (maximum values,

60 ns

80 ns

1000 ns

16 A

per diode)

P1(W)

100

90

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

80
70
60
50
40
30

T

20
10

0

0 102030405060708090100

IF(av) (A)

δ

=tp/T

Figure 3. Relative variation of thermal

impedance junction to case versus
pulse duration

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

0.4

δ = 0.2

δ = 0.1

0.2

Single pulse

0.0
1E-3 1E-2 1E-1 1E+0 5E+0

tp(s)

δ

T

=tp/T

δ = 1

IFM(A)

200

100

10

tp

1

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

Tj=125°C

(Typical values)

Tj=125°C

Figure 4. Peak reverse recovery current

versus dI

/dt (90% confidence, per

F

diode)

IRM(A)

30

VR=200V

Tj=125°C

25

20

IF=0.5xIF(av)

15

10

5

tp

0

0 50 100 150 200 250 300 350 400 450 500

IF=IF(av)

dIF/dt(A/µs)

Tj=25°C

VFM(V)

IF=2xIF(av)

3/7

Characteristics STTH16003

Figure 5. Reverse recovery time versus

dI

/dt (90% confidence, per diode)

F

Figure 6. Softness factor (tb/ta) versus dI

(typical values, per diode)

F

/dt

trr(ns)

240
220
200
180
160
140
120
100

IF=2xIF(av)

IF=IF(av)

IF=0.5xIF(av)

80
60
40
20

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

Figure 7. Relative variation of dynamic

parameters versus junction
temperature (reference: T

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
25 50 75 100 125

S factor

IRM

Tj(°C)

= 125°C)

j

VR=200V
Tj=125°C

S factor

0.6

0.5

VR=200V
Tj=125°C

0.4

0.3

0.2

0.1

0.0
0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

Figure 8. Transient peak forward voltage

versus dI

/dt (90% confidence, per

F

diode)

VFP(V)

8

IF=IF(av)

7

Tj=125°C

6

5

4

3

2

1

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

Figure 9. Forward recovery time versus dIF/dt (90% confidence, per diode)

tfr(ns)

1000

900
800
700
600
500
400
300
200
100

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

4/7

VFR=1.1 x VF max.

IF=IF(av)

Tj=125°C

STTH16003 Package information

2 Package information

● Cooling method: by conduction (C)

● Recommended torque value: 0.9 to 1.2 N·m

● Epoxy meets UL 94,V0

In order to meet environmental requirements, ST offers these devices in ECOPACK
packages. These packages have a lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at www.st.com.

Table 6. ISOTOP dimensions

Dimensions

®

Ref.

Millimeters Inches

Min. Max. Min. Max.

E

G2

C

A 11.80 12.20 0.465 0.480

A1 8.90 9.10 0.350 0.358

A

A1

E2

F1 F

C2

B 7.8 8.20 0.307 0.323

C 0.75 0.85 0.030 0.033

C2 1.95 2.05 0.077 0.081

D 37.80 38.20 1.488 1.504

D1 31.50 31.70 1.240 1.248

E 25.15 25.50 0.990 1.004

P1

D1

S

D

B

G

E1 23.85 24.15 0.939 0.951

E2 24.80 typ. 0.976 typ.

G 14.90 15.10 0.587 0.594

G1 12.60 12.80 0.496 0.504

G2 3.50 4.30 0.138 0.169

ØP

G1

E1

F 4.10 4.30 0.161 0.169

F1 4.60 5.00 0.181 0.197

P 4.00 4.30 0.157 0.69

P1 4.00 4.40 0.157 0.173

S 30.10 30.30 1.185 1.193

5/7

Ordering information STTH16003

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STTH16003TV1 STTH16003TV1 ISOTOP

4 Revision history

Table 8. Document revision history

Date Revision Description of changes

Oct-1999 4D Last issue.

25-Jun-2008 5 Reformatted to current standards. Corrected marking in Ta bl e 7

27 g

(without screws)10(with screws)

Tube

6/7

STTH16003

y

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