3 mm (T1) LED, Non Diffused |
LH 3344 |
Super-Bright, Hyper-Red GaAIAs-LED |
|
Besondere Merkmale
●eingefärbtes, klares Gehäuse
●Doppel-Heterostruktur in GaAlAs Technologie
●besonders hohe Lichtstärke
●Lötspieße mit Aufsetzebene
●gegurtet lieferbar
●Störimpulsfest nach DIN 40839
Features
●colored, clear package
●double heterojunction in GaAIAs technology
●especially high luminous intensity
●solder leads with stand-off
●available taped on reel
●load dump resistant acc. to DIN 40839
VEX06711
Typ |
Emissionsfarbe |
Gehäusefarbe |
Lichtstärke |
Bestellnummer |
|
Type |
Color of |
Color of |
Luminous |
Ordering Code |
|
|
Emission |
Package |
Intensity |
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IF = 10 mA |
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IV (mcd) |
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LH 3344-QT |
hyper-red |
red clear |
63 |
… 500 |
Q62703-Q2231 |
LH 3344-R |
|
|
100 |
… 200 |
Q62703-Q3198 |
LH 3344-S |
|
|
160 |
… 320 |
Q62703-Q3199 |
LH 3344-T |
|
|
250 |
… 500 |
Q62703-Q3817 |
LH 3344-RU |
|
|
100 |
… 800 |
Q62703-Q3200 |
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Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min ≤ 2.0.
Luminous intensity ratio in one packaging unit IV max / IV min ≤ 2.0.
Seniconductor Group |
1 |
11.96 |
LH 3344
Grenzwerte
Maximum Ratings
Bezeichnung |
Symbol |
Werte |
Einheit |
Parameter |
Symbol |
Values |
Unit |
|
|
|
|
Betriebstemperatur |
Top |
– 55 … + 100 |
˚C |
Operating temperature range |
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Lagertemperatur |
Tstg |
– 55 … + 100 |
˚C |
Storage temperature range |
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Sperrschichttemperatur |
Tj |
+ 100 |
˚C |
Junction temperature |
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Durchlaßstrom |
IF |
40 |
mA |
Forward current |
|
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Stoßstrom |
IFM |
0.5 |
A |
Surge current |
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t ≤ 10 μs, D = 0.005 |
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|
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Sperrspannung |
VR |
3 |
V |
Reverse voltage |
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Verlustleistung |
Ptot |
120 |
mW |
Power dissipation |
|
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TA ≤ 25 ˚C |
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|
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Wärmewiderstand |
Rth JA |
400 |
K/W |
Thermal resistance |
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Sperrschicht / Luft |
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Junction / air |
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Semiconductor Group |
2 |
LH 3344
Kennwerte (TA = 25 ˚C)
Characteristics
Bezeichnung |
|
Symbol |
Werte |
Einheit |
Parameter |
|
Symbol |
Values |
Unit |
|
|
|
|
|
Wellenlänge des emittierten Lichtes |
(typ.) |
λpeak |
660 |
nm |
Wavelength at peak emission |
(typ.) |
|
|
|
IF = 20 mA |
|
|
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|
|
|
|
|
|
Dominantwellenlänge |
(typ.) |
λdom |
645 |
nm |
Dominant wavelength |
(typ.) |
|
|
|
IF = 20 mA |
|
|
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|
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|
|
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Spektrale Bandbreite bei 50 % Irel max |
(typ.) |
Δλ |
22 |
nm |
Spectral bandwidth at 50 % Irel max |
(typ.) |
|
|
|
IF = 20 mA |
|
|
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Abstrahlwinkel bei 50 % IV (Vollwinkel) |
|
2ϕ |
25 |
Grad |
Viewing angle at 50 % IV |
|
|
|
deg. |
|
|
|
|
|
Durchlaßspannung |
(typ.) |
VF |
1.75 |
V |
Forward voltage |
(max.) |
VF |
2.6 |
V |
IF = 10 mA |
|
|
|
|
Sperrstrom |
(typ.) |
IR |
0.01 |
μA |
Reverse current |
(max.) |
IR |
10 |
μA |
VR = 3 V |
|
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|
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|
Kapazität |
(typ.) |
C0 |
25 |
pF |
Capacitance |
|
|
|
|
VR = 0 V, f = 1 MHz |
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Schaltzeiten: |
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Switching times: |
|
|
|
|
IV from 10 % to 90 % |
(typ.) |
tr |
140 |
ns |
IV from 90 % to 10 % |
(typ.) |
tf |
110 |
ns |
IF = 100 mA, tP = 10 μs, RL = 50 |
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Semiconductor Group |
3 |
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