Siemens LR Z18 x, LY Z181, LG Z18 x Technical data

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Siemens LR Z18 x, LY Z181, LG Z18 x Technical data

LGZ180-CO

Array LED

LR Z18 x, LY Z181, LG Z18 x

2 mm LED, Diffused

 

Besondere Merkmale

eingefärbtes, diffuses Gehäuse

als optischer Indikator einsetzbar

als Mehrfachzeile verfügbar

Störimpulsfest nach DIN 40839

Features

colored, diffused package

for use as optical indicator

available as multiple array (LED)

load dump resistant acc. to DIN 40839

VEX06726

Typ

Anzahl der

Emissionsfarbe

Gehäusefarbe

Lichtstärke

Bestellnummer

Type

Lichtpunkte

Color of

Color of

Luminous

Ordering Code

 

Number of

Emission

Package

Intensity

 

 

Dots

 

 

IF = 10 mA

 

 

 

 

 

IV (mcd)

 

 

 

 

 

 

 

LR Z181-CO

1

red

red diffused

³ 0.25

Q62703-Q1495

LR Z182-CO

2

red

red diffused

³ 0.25

Q62703-Q1496

LR Z183-CO

3

red

red diffused

³ 0.25

Q62703-Q1497

LR Z184-CO

4

red

red diffused

³ 0.25

Q62703-Q1498

LR Z185-CO

5

red

red diffused

³ 0.25

Q62703-Q1499

LR Z186-CO

6

red

red diffused

³ 0.25

Q62703-Q1500

LR Z187-CO

7

red

red diffused

³ 0.25

Q62703-Q1501

LR Z188-CO

8

red

red diffused

³ 0.25

Q62703-Q1502

LR Z189-CO

9

red

red diffused

³ 0.25

Q62703-Q1503

LR Z180-CO

10

red

red diffused

³ 0.25

Q62703-Q1504

 

 

 

 

 

 

LY Z181-CO

1

yellow

yellow diffused

³ 0.25

Q62703-Q1505

 

 

 

 

 

 

LG Z181-CO

1

green

green diffused

³ 0.25

Q62703-Q1506

LG Z182-CO

2

green

green diffused

³ 0.25

Q62703-Q1507

LG Z183-CO

3

green

green diffused

³ 0.25

Q62703-Q1508

LG Z184-CO

4

green

green diffused

³ 0.25

Q62703-Q1509

LG Z185-CO

5

green

green diffused

³ 0.25

Q62703-Q1510

LG Z186-CO

6

green

green diffused

³ 0.25

Q62703-Q1511

LG Z188-CO

8

green

green diffused

³ 0.25

Q62703-Q1513

LG Z180-CO

10

green

green diffused

³ 0.25

Q62703-Q1515

 

 

 

 

 

 

Streuung der Lichtstärke in einer Verpackungseinheit IV max / IV min £ 2.0.

Luminous intensity ratio in one packaging unit IV max / IV min £ 2.0.

Semiconductor Group

1

11.96

LR Z18 x, LY Z181, LG Z18 x

Grenzwerte

Maximum Ratings

Bezeichnung

Symbol

Werte

Einheit

Parameter

Symbol

Values

Unit

 

 

 

 

Betriebstemperatur

Top

– 40 … + 80

˚C

Operating temperature range

 

 

 

 

 

 

 

Lagertemperatur

Tstg

– 40 … + 80

˚C

Storage temperature range

 

 

 

 

 

 

 

Sperrschichttemperatur

Tj

+ 100

˚C

Junction temperature

 

 

 

 

 

 

 

Durchlaßstrom

IF

30

mA

Forward current

 

 

 

 

 

 

 

Stoßstrom

IFM

0.5

A

Surge current

 

 

 

t 10 μs, D = 0.005

 

 

 

 

 

 

 

Sperrspannung

VR

5

V

Reverse voltage

 

 

 

 

 

 

 

Verlustleistung

Ptot

80

mW

Power dissipation

 

 

 

TA 25 ˚C

 

 

 

 

 

 

 

Wärmewiderstand

Rth JA

7501)

K/W

Thermal resistance

 

 

 

Sperrschicht / Luft

 

 

 

Junction / air

 

 

 

 

 

 

 

 

1)

Auf Platine gelötet: Lötfläche ³ 16 cm2.

 

 

 

1)

Soldered on PC board: pad size ³ 16 cm2.

 

 

 

Semiconductor Group

2

LR Z18 x, LY Z181, LG Z18 x

Kennwerte (TA = 25 ˚C)

Characteristics

Bezeichnung

 

Symbol

 

Werte

 

Einheit

Parameter

 

Symbol

 

Values

 

Unit

 

 

 

 

 

 

 

 

 

 

LR

LY

LG

 

 

 

 

 

 

 

 

Wellenlänge des emittierten Lichtes

(typ.)

λpeak

660

586

565

nm

Wavelength at peak emission

(typ.)

 

 

 

 

 

IF = 20 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

Dominantwellenlänge

(typ.)

λdom

645

590

570

nm

Dominant wavelength

(typ.)

 

 

 

 

 

IF = 20 mA

 

 

 

 

 

 

 

 

 

 

 

 

 

Spektrale Bandbreite bei 50 % Irel max

(typ.)

Δλ

35

45

25

nm

Spectral bandwidth at 50 % Irel max

(typ.)

 

 

 

 

 

IF = 20 mA

 

 

 

 

 

 

 

 

 

 

 

 

Abstrahlwinkel bei 50 % IV (Vollwinkel)

2ϕ

100

100

100

Grad

Viewing angle at 50 % IV

 

 

 

 

 

deg.

 

 

 

 

 

 

 

Durchlaßspannung

(typ.)

VF

1.6

2.0

2.0

V

Forward voltage

(max.)

VF

2.0

2.6

2.6

V

IF = 10 mA

 

 

 

 

 

 

Sperrstrom

(typ.)

IR

0.01

0.01

0.01

μA

Reverse current

(max.)

IR

10

10

10

μA

VR = 5 V

 

 

 

 

 

 

 

 

 

 

 

 

 

Kapazität

(typ.)

C0

25

10

15

pF

Capacitance

 

 

 

 

 

 

VR = 0 V, f = 1 MHz

 

 

 

 

 

 

 

 

 

 

 

 

 

Schaltzeiten:

 

 

 

 

 

 

Switching times:

 

 

 

 

 

 

IV from 10 % to 90 %

(typ.)

tr

120

300

450

ns

IV from 90 % to 10 %

(typ.)

tf

50

150

200

ns

IF = 100 mA, tP = 10 μs, RL = 50 Ω

 

 

 

 

 

 

Semiconductor Group

3

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