NEC Electronics Inc UPA807T-T1, UPA807T Datasheet

DATA SHEET

SILICON TRANSISTOR

μPA807T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD

FEATURES

•Low Current, High Gain

|S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz |S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz

•A Super Mini Mold Package Adopted

•Built-in 2 Transistors (2 × 2SC5179)

ORDERING INFORMATION

	PART NUMBER	QUANTITY		PACKING STYLE
	μPA807T	Loose products	Embossed tape 8 mm wide. Pin 6
		(50 PCS)	(Q1	Base), Pin 5 (Q2 Base), Pin 4
			(Q2	Emitter) face to perforation
	μPA807T-T1	Taping products
			side of the tape.
		(3 KPCS/Reel)

Remark If you require an evaluation sample, please contact an

NEC Sales Representative. (Unit sample quantity is 50

pcs.)

PACKAGE DRAWINGS

(Unit: mm)

2.1±0.1

1.25±0.1

						+0.1	–0
2.0±0.2	1.3	0.65 0.65	2 1	Y X	5 6	0.2
			3		4

0.9±0.1	0.7	+0.1	–0
	0.1	0.15
	0 to

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PIN CONFIGURATION (Top View)

PARAMETER

SYMBOL

RATING

UNIT

Collector to Base Voltage

VCBO

5

V

Collector to Emitter Voltage

VCEO

3

V

6

5

4

Q1

Emitter to Base Voltage

VEBO

2

V

Q2

Collector Current

IC

10

mA

Total Power Dissipation

PT

30 in 1 element

mW

60 in 2 elements

1

2

3

Junction Temperature

Tj

150

°C

Storage Temperature

Tstg

–65 to +150

°C

PIN CONNECTIONS

1.

Collector (Q1)

4.

Emitter (Q2)

2.

Emitter (Q1)

5.

Base (Q2)

3.

Collector (Q2)

6.

Base (Q1)

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

Document No. P12153EJ2V0DS00 (2nd edition) (Previous No. ID-3641)

Date Published November 1996 N	©		19954
Printed in Japan

								μPA807T
	ELECTRICAL CHARACTERISTICS (TA = 25 °C)
	PARAMETER	SYMBOL		CONDITION	MIN.	TYP.	MAX.	UNIT
	Collector Cutoff Current	ICBO	VCB = 5 V, IE = 0				0.1	μA
	Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0				0.1	μA
	DC Current Gain	hFE	VCE = 2 V, IC = 7 mANote 1		70		140
	Gain Bandwidth Product (1)	fT	VCE = 2 V, IC = 7 mA, f = 2 GHz		10	13		GHz
	Gain Bandwidth Product (2)	fT	VCE = 1 V, IC = 5 mA, f = 2 GHz		8.5	12		GHz
	Feed-back Capacitance	Cre	VCB = 2 V, IE = 0, f = 1 MHzNote 2			0.4	0.6	pF
	Insertion Power Gain (1)	|S21e|2	VCE = 2 V, IC = 7 mA, f = 2 GHz		7.5	9		dB
	Insertion Power Gain (2)	|S21e|2	VCE = 1	V, IC = 5 mA, f = 2 GHz	7	8.5		dB
	Noise Figure (1)	NF	VCE = 2	V, IC = 3 mA, f = 2 GHz		1.5	2	dB
	Noise Figure (2)	NF	VCE = 1	V, IC = 3 mA, f = 2 GHz		1.5	2	dB
	hFE Ratio	hFE1/hFE2	VCE = 2	V, IC = 7 mA	0.85
			A smaller value among
			hFE of hFE1 = Q1, Q2
			A larger value among
			hFE of hFE2 = Q1, Q2
	Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank	KB
Marking	T84
hFE Value	70 to 140

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

(mW)	200

PT
Dissipation	100
Power		2 Elements in Total	60 mW
Total		Per Element	30 mW
	0	50	100	150
		Ambient Temperature TA (°C)

COLLECTOR CURRENT

vs. COLLECTOR TO EMITTER VOLTAGE

	25
(mA)	20
				200	μA
IC	15			180	μA
Current				160	μA
				140	μ
					A
				120	μA
Collector	10			100	μA
				80	μ
					A
				60	μ
					A
	5			40	μA
				IB = 20		μ
						A
	0	1.0	2.0	3.0

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT

vs. BASE TO EMITTER VOLTAGE

	50
		VCE = 2 V
IC (mA)	40
	30
Current
	20
Collector
	10
	0	0.5									1.0

Base to Emitter Voltage VBE (V)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

	500
hFE	200
Gain	100				VCE = 2 V
DC Current
	50			VCE = 1 V
	20
	10
	1	2	5	10	20	50	100
			Collector Current IC (mA)

2

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT

	15
		f = 2 GHz
fT (GHz)										VCE = 2 V
ProductBandwidth										VCE = 1 V
Gain	10
	5
	1				2		3		5			7	10						20
					Collector Current IC (mA)
					NOISE FIGURE
					vs. COLLECTOR CURRENT
	3
		f = 2 GHz
(dB)
Figure	2
												VCE = 1 V
Noise
																	VCE = 2 V
	1
	1						2		3				5				7		10
					Collector Current IC (mA)

μPA807T

INSERTION POWER GAIN vs. COLLECTOR CURRENT

	10
(dB)										VCE = 2 V
|S21e|2									VCE = 1 V
Gain	5
Insertion Power
	0	1			2	3			5			7	10		20
					Collector Current IC (mA)
		FEED-BACK CAPACITANCE
		vs. COLLECTOR TO BASE VOLTAGE
	0.8
Cre (pF)														f = 1 MHz
	0.6
back-Capacitance	0.2
Feed	0.4
	0.0	2.0				4.0			6.0				8.0		10.0

Collector to Base Voltage VCB (V)

3