NEC Electronics Inc UPA833TF-T1, UPA833TF Datasheet

PRELIMINARY DATA SHEET

Silicon Transistor

μPA833TF

NPN SILICON EPITAXIAL TRANSISTOR (WITH 2 DIFFERENT ELEMENTS) IN A 6-PIN THIN-TYPE SMALL MINI MOLD PACKAGE

DESCRIPTION

The μPA833TF has two different built-in transistors (Q1 and Q2) for low noise amplification in the VHF band to UHF band.

FEATURES

•Low noise

Q1 : NF = 1.7 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Q2 : NF = 1.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 3 mA

•High gain

Q1 : |S21e|2 = 3.5 dB TYP. @ f = 2 GHz, VCE = 1 V, IC = 3 mA Q2 : |S21e|2 = 8.5 dB TYP. @ f = 2 GHz, VCE = 3 V, IC = 10 mA

•6-pin thin-type small mini mold package

•2 different transistors on-chip (2SC5193, 2SC4959)

ON-CHIP TRANSISTORS

	Q1	Q2
3-pin small mini mold part No.	2SC5193	2SC4959

The μPA836TF features the Q1 and Q2 in inverted positions.

ORDERING INFORMATION

	PART NUMBER	QUANTITY	PACKING STYLE
	μPA833TF	Loose products	8-mm wide embossed tape.
		(50 pcs)	Pin 6 (Q1 Base), pin 5 (Q2
			Emitter), and pin 4 (Q2 Base)
	μPA833TF-T1	Taping products
			face perforated side of tape.
		(3 kpcs/reel)

PACKAGE DRAWINGS (Unit:mm)

				2.10±0.1
				1.25±0.1
				4 4 V		+0.1 −0.05
2.00±0.2	1.30	0.65 0.65	2 1		5 6	0.22
			3		4

0.60±0.1	0.45	0.1	0.13±0.05
		0 to

PIN CONFIGURATION (Top View)

B1 E2 B2

	6	5					4
	Q1						Q2
	1	2					3
	C1			E1			C2

PIN CONNECTIONS
1.	Collector (Q1)	4.	Base (Q2)
2.	Emitter (Q1)	5.	Emitter (Q2)
3.	Collector (Q2)	6.	Base (Q1)

Caution is required concerning excess input, such as from static electricity, because the high-frequency

process is used for this device.

The information in this document is subject to change without notice.

Document No. P12725EJ1V0DS00 (1st edition)

Date Published August 1997 N
Printed in Japan	©	1997

						μPA833TF
	ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
	PARAMETER	SYMBOL		RATING			UNIT
			Q1		Q2
	Collector to base voltage	VCBO	9		9		V
	Collector to emitter voltage	VCEO	6		6		V
	Emitter to base voltage	VEBO	2		2		V
	Collector current	IC	100		30		mA
	Total power dissipation	PT	150 in 1 element		150 in 1 element		mW
			200 in 2 elementsNote
	Junction temperature	Tj	150		150		°C
	Storage temperature	Tstg		−65 to +150			°C

Note 110 mW must not be exceeded for 1 element.

(1) Q1

ELECTRICAL CHARACTERISTICS

PARAMETER	SYMBOL		CONDITION	MIN.	TYP.	MAX.	UNIT
Collector cutoff current	ICBO	VCB = 5 V, IE = 0				0.1	μA
Emitter cutoff current	IEBO	VEB = 1 V, IC = 0				0.1	μA
DC current gain	hFE	VCE = 1 V, IC = 3 mANote 1		100		145
Gain bandwidth product (1)	fT	VCE = 1 V, IC = 3 mA, f = 2 GHz		4.0	4.5		GHz
Gain bandwidth product (2)	fT	VCE = 3 V, IC = 20 mA, f = 2 GHz			9.0		GHz
Feedback capacitance	Cre	VCB = 1 V, IE = 0, f = 1 MHzNote 2			0.75	0.85	pF
Insertion power gain (1)	|S21e|2	VCE = 1	V, IC = 3 mA, f = 2 GHz	2.5	3.5		dB
Insertion power gain (2)	|S21e|2	VCE = 3	V, IC = 20 mA, f = 2 GHz		6.5		dB
Noise figure (1)	NF	VCE = 1	V, IC = 3 mA, f = 2 GHz		1.7	2.5	dB
Noise figure (2)	NF	VCE = 3	V, IC = 7 mA, f = 2 GHz		1.5		dB

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty cycle ≤ 2%

2.Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter.

2

μPA833TF

(2) Q2

ELECTRICAL CHARACTERISTICS

PARAMETER	SYMBOL		CONDITION	MIN.	TYP.	MAX.	UNIT
Collector cutoff current	ICBO	VCB = 5 V, IE = 0				0.1	μA
Emitter cutoff current	IEBO	VEB = 1 V, IC = 0				0.1	μA
DC current gain	hFE	VCE = 3 V, IC = 10 mANote 1		75		150
Gain bandwidth product	fT	VCE = 3	V, IC = 10 mA, f = 2 GHz		12		GHz
Feedback capacitance	Cre	VCB = 3	V, IE = 0, f = 1 MHzNote 2		0.4	0.7	pF
Insertion power gain	|S21e|2	VCE = 3	V, IC = 10 mA, f = 2 GHz	7	8.5		dB
Noise figure	NF	VCE = 3	V, IC = 3 mA, f = 2 GHz		1.5	2.5	dB

Notes 1. Pulse measurement: PW ≤ 350 μs, Duty cycle ≤ 2%

2.Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to guard pin of capacitance meter.

hFE CLASSIFICATION

Rank	FB
Marking	V44
hFE value of Q1	100 to 145
hFE value of Q2	75 to 150

3

TYPICAL CHARACTERISTICS (TA = 25°C)

Q1

Total Power Dissipation vs. Ambient Temperature

(mW)			Free Air
	200	2 elements in total
PT			Q1 when using
dissipation			1 element
			Q1 when using
	100		2 elements
Total power
	0	50	100	150
		Ambient temperature TA (˚C)

			Collector Current vs. DC Base Voltage
	100
	50		VCE = 1 V
(mA)C	20
	5
I	10
current	2
	1
Collector	0.5
	0.2
	0.1
	0.05
	0.02
	0.01
			0.5										1
	0

DC base voltage VBE (V)

	Collector Current vs. Collector to Emitter Voltage
	30
														200	μA
(mA)IC	20													180	μA
														160	μA
current														140	μA
														100	μA
														120	μA
Collector	10													80	μ A
														60	μ A
														40	μ A
													IB = 20 μ A
	0	1			2		3		4		5				6
			Collector to emitter voltage VCE (V)

μPA833TF

Q2

Total Power Dissipation vs. Ambient Temperature

(mW)			Free Air
	200	2 elements in total
PT			Q2 when using
dissipation			1 element
			Q2 when using
	100		2 elements
Total power
	0	50	100	150
		Ambient temperature TA (˚C)

Collector Current vs. DC Base Voltage

	50
			VCE = 3 V
IC (mA)	40
	30
current
	20
Collector
	10
	0
									0.5										1.0
						DC base voltage VBE (V)
			Collector Current vs. Collector to Emitter Voltage
	60
																	500μA
(mA)IC	50
																	400		μA
	40
current																	300		μA
	30
Collector																	200		μA
	20
														IB =			100μA
	10
	0		1			2			3		4			5					6
				Collector to emitter voltage VCE (V)

4

Q1

DC Current Gain vs. Collector Current

	200
		VCE = 1 V
hFE
gain
currentDC	100
	0

	0.1		0.2		0.5	1		2		5		10		20		50		100
					Collector current							IC (mA)
	Gain Bandwidth Product vs. Collector Current
)	10		f = 2 GHZ
			VCE = 1 V
(GHZ
fT
product	5
Gain bandwidth
	0
			1					2		3				5		7		10
					Collector current IC (mA)
			Insertion Power Gain vs. Collector Current
	10
(dB)			f = 2 GHZ
			VCE = 1 V
2
S21e
gain	5
Insertion power
	0
			1					2		3				5		7		10

Collector current IC (mA)

μPA833TF

Q2

DC Current Gain vs. Collector Current

200

hFE																							5 V
gain
											VCE			= 3			V
currentDC	100
	0
	0.1			0.2					0.5	1				2				5			10			20			50				100
									Collector current												IC (mA)
	Gain Bandwidth Product vs. Collector Current
	14
				f = 2 GHz
)
(GHZ	12
																												5 V
fT
																												3 V
product	10
bandwidth	8
																											VCE = 1 V
Gain	6
	4
	2
	0.5			1						2				5							10			20							50
									Collector current IC (mA)
			Insertion Power Gain vs. Collector Current
	10
				f = 2 GHz
(dB)
2	8																												5 V
																													3 V
S21e
gain
	6																									VCE = 1 V
power
Insertion	4
	2
	0.5			2						5								10						20							50

Collector current IC (mA)

5