Collector to base voltageV
Collector to emitter voltageV
Emitter to base voltageV
Collector currentI
Total power dissipationP
Junction temperatureT
Storage temperatureT
Note
110 mW must not be exceeded for 1 element.
(1) Q1
CBO
CEO
EBO
C
T
j
stg
ELECTRICAL CHARACTERISTICS
°°°°
C)
RATING
Q1Q2
99V
66V
22V
10030mA
150 in 1 element150 in 1 elementmW
200 in 2 elements
Note
150150
−
65 to +150
UNITSYMBOLPARAMETER
°
C
°
C
PARAMETERSYMBOLCONDITIONMIN.TYP.MAX.UNIT
Collector cutoff currentI
Emitter cutoff currentI
DC current gainh
Gain bandwidth product (1)f
Gain bandwidth product (2)f
Feedback capacitanceC
Insertion power gain (1)
Insertion power gain (2)
CBO
EBO
FE
T
T
|
21e
S
|
21e
S
VCB = 5 V, IE = 00.1
VEB = 1 V, IC = 00.1
VCE = 1 V, IC = 3 mA
Note 1
100145
VCE = 1 V, IC = 3 mA, f = 2 GHz4.04.5GHz
VCE = 3 V, IC = 20 mA, f = 2 GHz9.0GHz
VCB = 1 V, IE = 0, f = 1 MHz
re
2
|
VCE = 1 V, IC = 3 mA, f = 2 GHz2.53.5dB
2
|
VCE = 3 V, IC = 20 mA, f = 2 GHz6.5dB
Note 2
0.750.85pF
Noise figure (1)NFVCE = 1 V, IC = 3 mA, f = 2 GHz1.72.5dB
Noise figure (2)NFVCE = 3 V, IC = 7 mA, f = 2 GHz1.5dB
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
2.
s, Duty cycle ≤ 2%
µ
method), with emitter connected to guard pin of capacitance meter.
µ
A
µ
A
2
µµµµ
PA833TF
(2) Q2
ELECTRICAL CHARACTERISTICS
PARAMETERSYMBOLCONDITIONMIN.TYP.MAX.UNIT
Collector cutoff currentI
Emitter cutoff currentI
DC current gainh
Gain bandwidth productf
Feedback capacitanceC
Insertion power gain
Noise figureNFVCE = 3 V, IC = 3 mA, f = 2 GHz1.52.5dB
CBO
EBO
FE
T
|
21e
S
VCB = 5 V, IE = 00.1
VEB = 1 V, IC = 00.1
VCE = 3 V, IC = 10 mA
Note 1
75150
VCE = 3 V, IC = 10 mA, f = 2 GHz12GHz
VCB = 3 V, IE = 0, f = 1 MHz
re
2
|
VCE = 3 V, IC = 10 mA, f = 2 GHz78.5dB
Note 2
0.40.7pF
µ
A
µ
A
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when measured with capacitance meter (automatic balanced bridge
2.
method), with emitter connected to guard pin of capacitance meter.
hFE CLASSIFICATION
RankFB
MarkingV44
hFE value of Q1100 to 145
hFE value of Q275 to 150
s, Duty cycle ≤ 2%
µ
3
µµµµ
PA833TF
TYPICAL CHARACTERISTICS (TA = 25
Q1Q2
Total Power Dissipation vs. Ambient Temperature
200
(mW)
T
2 elements in total
100
Total power dissipation P
0
50100150
Ambient temperature TA (˚C)
Collector Current vs. DC Base Voltage
100
V
CE
50
= 1 V
20
10
(mA)
5
C
2
1
0.5
0.2
0.1
Collector current I
0.05
0.02
0.01
00.51
DC base voltage V
Free Air
Q1 when using
1 element
Q1 when using
2 elements
BE
(V)
°°°°
C)
Total Power Dissipation vs. Ambient Temperature
Free Air
Q2 when using
200
(mW)
T
2 elements in total
1 element
Q2 when using
100
2 elements
Total power dissipation P
050100150
A
Ambient temperature T
(˚C)
Collector Current vs. DC Base Voltage
50
V
CE
= 3 V
40
(mA)
C
30
20
Collector current I
10
0
DC base voltage V
0.51.0
BE
(V)
Collector Current vs. Collector to Emitter Voltage
30
200 A
180 A
(mA)
C
20
160 A
140 A
120 A
100 A
10
Collector current I
IB = 20 A
0 123456
Collector to emitter voltage V
CE
4
µ
µ
µ
µ
µ
µ
µ
80 A
µ
60 A
µ
40 A
(V)
Collector Current vs. Collector to Emitter Voltage
60
500 A
µ
50
(mA)
C
40
30
400 A
µ
300 A
µ
µ
200 A
20
µ
B
= 100 A
Collector current I
10
I
µ
0 246
135
Collector to emitter voltage V
CE
(V)
Q1Q2
µµµµ
PA833TF
DC Current Gain vs. Collector Current
200
VCE = 1 V
FE
100
DC current gain h
0
0.1 0.210.510 205025
Collector current IC (mA)
Gain Bandwidth Product vs. Collector Current
10
f = 2 GH
)
Z
(GH
T
Z
VCE = 1 V
5
100
DC Current Gain vs. Collector Current
200
FE
5 V
VCE = 3 V
100
DC current gain h
0
0.22
0.1
0.5 151050 100
20
Collector current IC (mA)
Gain Bandwidth Product vs. Collector Current
14
)
Z
(GH
T
f = 2 GHz
12
10
8
5 V
3 V
VCE = 1 V
Gain bandwidth product f
0
1235710
Collector current IC (mA)
Insertion Power Gain vs. Collector Current
10
f = 2 GH
Z
VCE = 1 V
(dB)
2
21e
5
Insertion power gain S
0
1235710
Collector current IC (mA)
6
4
Gain bandwidth product f
2
0.5
12 510
Collector current IC (mA)
Insertion Power Gain vs. Collector Current
10
f = 2 GHz
(dB)
2
8
21e
6
4
Insertion power gain S
2
0.5
2
510
Collector current IC (mA)
20
VCE = 1 V
20
50
5 V
3 V
50
5
Q1Q2
Noise Figure vs. Collector Current
3
f = 2 GH
Z
VCE = 1 V
Noise Figure vs. Collector Current
4
3
µµµµ
PA833TF
f = 2 GHz
V
CE
= 3 V
2
Noise figure NF (dB)
f = 1 GH
Z
1
1235
Collector current IC (mA)
Feedback Capacitance vs. Collector to Base Voltage
f = 1 MH
(pF)
re
1.0
0.5
Feedback capacitance C
0.1
1
Collector to base voltage V
510
CB
(V)
710
Z
20
2
1
Noise figure NF (dB)
0
0.55012 510
20
Collector current IC (mA)
Feedback Capacitance vs. Collector to Base Voltage
0.6
f = 1 MHz
(pF)
0.5
re
0.4
0.3
Feedback capacitance C
0.2
0.5
12 510
CB
Collector to base voltage V
(V)
20
Maximum Available Gain, Insertion Power Gain vs. Frequency
VCE = 1 V
C
= 5 mA
I
30
21e
MAG
2
(dB)
2
21e
20
S
10
0
Maximum available power gain MAG (dB)
Insertion power gain S
0.10.515
Frequency f (GHZ)
6
Maximum Available Gain, Insertion Power Gain vs. Frequency
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on
a customer designated "quality assurance program" for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
Anti-radioactive design is not implemented in this product.
M4 96. 5
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