NEC Electronics Inc UPA828TF-T1, UPA828TF Datasheet

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

PPA828TF

HIGH-FREQUENCY LOW-NOISE AMPLIFIER

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 6-PIN 2 u 2SC5184) THIN-TYPE SMALL MINI MOLD

FEATURES

•Low noise

NF = 1.3 dB TYP. @ VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

•6-pin thin-type small mini mold package adopted

•Built-in 2 transistors (2 u 2SC5184)

ORDERING INFORMATION

	Part Number	Quantity	Packing Style
	PPA828TF	Loose products	Embossed tape 8 mm wide.
		(50 pcs)	Pin 6 (Q1 Base), Pin 5 (Q2
			Emitter), Pin 4 (Q2 Base) face to
	PPA828TF-T1	Taping products
			perforation side of the tape.
		(3 kpcs/reel)

Remark If you require an evaluation sample, please contact

an NEC Sales Representative (Unit sample quantity

PACKAGE DRAWINGS (Unit: mm)
				2.10±0.1
				1.25±0.1
				6 8 R		+0.1	–0.05
2.00±0.2	1.30	0.65 0.65	2 1		5 6	0.22
			3		4

0.60±0.1	0.45	0.1	0.13±0.05
		0 to

is 50 pcs).

PIN CONFIGURATION (Top View)

ABSOLUTE MAXIMUM RATINGS (TA = 25qC)

B1

E2

B2

Parameter

Symbol

Rating

Unit

6

5

4

Collector to Base Voltage

VCBO

5

V

Q1

Q2

Collector to Emitter Voltage

VCEO

3

V

1

2

3

Emitter to Base Voltage

VEBO

2

V

C1

E1

C2

Collector Current

IC

30

mA

PIN CONNECTIONS

Total Power Dissipation

PT

90 in 1 element

mW

180 in 2 elements

1. Collector (Q1)

4. Base

(Q2)

2. Emitter (Q1)

5. Emitter (Q2)

Junction Temperature

Tj

150

°C

3. Collector (Q2)

6. Base

(Q1)

Storage Temperature

Tstg

ð65 to +150

°C

Caution is required concerning excess input, such as from static electricity, due to the high-precision

fabrication processes used for this device.

The information in this document is subject to change without notice.

Document No. P12693EJ1V0DS00 (1st edition)

Date Published July 1997 N	©		1997

Printed in Japan

								PPA828TF
	ELECTRICAL CHARACTERISTICS (TA = 25°C)
	Parameter	Symbol		Condition	MIN.	TYP.	MAX.		Unit
	Collector Cutoff Current	ICBO	VCB = 5 V, IE = 0				0.1		PA
	Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0				0.1		PA
	DC Current Gain	hFE	VCE = 2 V, IC = 20 mANote 1		70		140
	Gain Bandwidth Product (1)	fT	VCE = 2 V, IC = 20 mA, f = 2 GHz		9	11			GHz
	Gain Bandwidth Product (2)	fT	VCE = 1 V, IC = 10 mA, f = 2 GHz		7	9			GHz
	Feedback Capacitance	Cre	VCB = 2 V, IE = 0, f = 1 MHzNote 2			0.4	0.8		pF
	Insertion Power Gain (1)	|S21e|2	VCE = 2 V, IC = 20 mA, f = 2 GHz		7	8.5			dB
	Insertion Power Gain (2)	|S21e|2	VCE = 1	V, IC = 10 mA, f = 2 GHz	6	7.5			dB
	Noise Figure (1)	NF	VCE = 2	V, IC = 3 mA, f = 2 GHz		1.3	2		dB
	Noise Figure (2)	NF	VCE = 1	V, IC = 3 mA, f = 2 GHz		1.3	2		dB
	hFE Ratio	hFE1/hFE2	VCE = 2	V, IC = 20 mA	0.85
			hFE1 = smaller hFE value among Q1 and Q2
			hFE2 = larger hFE value among Q1 and Q2

Notes 1. Pulse measurement PW d 350 Ps, Duty cycle d 2%

2.Capacitance between collector and base measured with a capacitance meter (auto-balancing bridge method). Emitter should be connected to the guard pin of capacitance meter.

hFE CLASSIFICATION

Rank	KB
Marking	R86
hFE value	70 to 140

2

TYPICAL CHARACTERISTICS (TA = 25 qC)

Total Power Dissipation vs. Ambient Temperature

(mW)	200	2 Elements in Total
PT			180 mW
Dissipation	100	Per Element
Total Power		90 mW
	0	50	100	150
		Ambient Temperature TA (˚C)

Collector Current vs. Collector to Emitter Voltage

(mA)IC	25
	20							180		μA
								200	μA
Current
								120	μA
	15							160	μA
Collector								140 μA
	10							100	μA
								80	μ
										A
	5							60 μA
								40	μA
								IB = 20 μA
	0	1.0			2.0		3.0
			Collector to Emitter Voltage VCE (V)

PPA828TF

		Collector Current vs. DC Base Voltage
	50
		VCE = 2 V
IC (mA)	40
	30
Current
	20
Collector
	10
	0	0.5										1.0
				DC Base Voltage VBE (V)

DC Current Gain vs. Collector Current

	500
hFE	200
					VCE = 2 V
Gain
	100
DC Current	50			VCE = 1 V
	20
	10	2	5	10	20	50	100
	1
			Collector Current IC (mA)

3

Gain Bandwidth Product vs. Collector Current

	15
fT (GHz)			f = 2 GHz
													VCE = 2 V
Product
	10
Bandwidth													VCE = 1 V
Gain	5
	1			2				3		5			7			10			20
					Collector Current IC (mA)
					Noise Figure vs. Collector Current
	3
															f = 2 GHz
NF (dB)	2
Figure
							VCE = 2 V
Noise
			VCE	= 1 V
	1
				1				2		3			5			7			10
						Collector Current IC (mA)

PPA828TF

			Insertion Power Gain vs. Collector Current
	10
			f = 2 GHz
(dB)												VCE = 2 V
2
21e|
												VCE = 1 V
|S
Gain	5
Insertion Power
	0
	1			2				3			5				7		10			20
					Collector Current IC (mA)
	Feedback Capacitance vs. Collector to Base Voltage
	0.8
re (pF)															f = 1 MHz
	0.6
C
Capacitance	0.4
Feedback	0.2
	0			2.0				4.0			6.0						8.0			10.0
				Collector to Base Voltage VCB (V)

4

PPA828TF

S PARAMETER Q1

VCE = 2 V, IC = 1 mA, Z0 = 50 :

FREQUENCY		S11		S21		S12		S22
GHz	MAG.	ANG.	MAG.	ANG.	MAG.	ANG.	MAG.	ANG.
.10	.98	ð6.87	2.42	171.77	.02	84.43	.99	ð4.42
.20	.96	ð13.71	2.40	164.17	.04	79.61	.99	ð8.84
.30	.95	ð20.79	2.42	157.17	.07	74.54	.97	ð12.97
.40	.92	ð27.69	2.39	150.27	.09	69.50	.95	ð17.23
.50	.90	ð34.82	2.39	143.98	.10	65.17	.92	ð21.05
.60	.87	ð42.10	2.36	138.23	.12	60.29	.90	ð25.13
.70	.83	ð49.35	2.34	132.19	.14	56.25	.87	ð28.47
.80	.80	ð56.87	2.32	126.78	.15	52.12	.84	ð32.22
.90	.76	ð64.78	2.32	120.75	.16	48.48	.81	ð34.98
1.00	.72	ð72.15	2.26	115.35	.17	45.16	.77	ð38.02
1.10	.68	ð80.50	2.25	110.20	.18	41.64	.75	ð40.84
1.20	.64	ð88.71	2.22	104.80	.18	38.79	.72	ð43.16
1.30	.60	ð97.33	2.16	99.84	.19	35.82	.69	ð45.68
1.40	.56	ð106.17	2.13	94.75	.19	33.51	.66	ð47.79
1.50	.53	ð115.63	2.10	89.64	.20	31.12	.63	ð49.93
1.60	.50	ð124.41	2.04	84.89	.20	29.04	.61	ð51.89
1.70	.47	ð133.52	1.99	80.39	.20	27.37	.59	ð53.75
1.80	.45	ð142.93	1.93	75.97	.20	25.64	.57	ð55.61
1.90	.44	ð152.17	1.87	71.81	.20	24.28	.55	ð57.34
2.00	.43	ð161.16	1.81	68.21	.20	23.31	.53	ð59.13
2.10	.42	ð170.55	1.77	63.89	.20	22.18	.51	ð60.65
2.20	.41	ð179.15	1.72	60.35	.20	21.50	.50	ð62.47
2.30	.42	173.21	1.66	56.62	.20	20.78	.48	ð64.18
2.40	.42	165.82	1.61	53.39	.20	20.36	.47	ð66.09
2.50	.43	158.63	1.57	50.02	.20	20.11	.46	ð67.98
2.60	.44	152.11	1.52	47.07	.20	20.00	.45	ð69.96
2.70	.45	146.49	1.47	43.96	.20	19.86	.43	ð72.10
2.80	.46	140.70	1.43	41.06	.20	20.11	.43	ð74.42
2.90	.47	135.62	1.39	38.16	.20	20.18	.42	ð76.70
3.00	.48	131.49	1.35	35.61	.20	20.44	.41	ð79.07

5

PPA828TF

S PARAMETER Q1

VCE = 2 V, IC = 3 mA, Z0 = 50 :

FREQUENCY		S11		S21		S12		S22
GHz	MAG.	ANG.	MAG.	ANG.	MAG.	ANG.	MAG.	ANG.
.10	.92	ð10.76	6.79	166.90	.02	81.64	.97	ð8.65
.20	.88	ð21.14	6.51	156.23	.04	74.96	.94	ð16.65
.30	.83	ð31.82	6.40	146.87	.06	68.78	.88	ð23.55
.40	.78	ð42.04	6.16	138.45	.07	63.27	.82	ð29.88
.50	.71	ð52.43	5.95	130.70	.09	59.72	.76	ð34.56
.60	.65	ð62.50	5.66	123.90	.10	55.61	.70	ð39.19
.70	.58	ð72.69	5.43	116.65	.10	53.36	.65	ð42.35
.80	.51	ð82.82	5.17	110.41	.11	51.17	.61	ð45.67
.90	.45	ð92.60	4.88	104.31	.12	49.32	.57	ð48.15
1.00	.40	ð102.47	4.60	98.90	.12	48.24	.53	ð50.32
1.10	.36	ð112.48	4.34	94.04	.13	47.06	.50	ð52.49
1.20	.32	ð122.73	4.09	89.32	.14	46.16	.47	ð54.24
1.30	.30	ð133.29	3.85	85.28	.14	45.46	.45	ð56.10
1.40	.27	ð144.06	3.64	81.23	.15	44.88	.43	ð57.94
1.50	.26	ð155.19	3.45	77.48	.15	44.14	.41	ð59.86
1.60	.25	ð165.56	3.26	74.10	.16	43.48	.39	ð61.58
1.70	.25	ð175.58	3.10	70.82	.16	42.97	.37	ð63.35
1.80	.26	174.75	2.95	67.58	.17	42.46	.35	ð65.35
1.90	.26	166.25	2.82	64.50	.17	41.71	.34	ð67.39
2.00	.27	158.59	2.69	61.59	.18	41.41	.32	ð69.29
2.10	.28	151.33	2.58	58.69	.19	40.78	.31	ð71.31
2.20	.29	145.02	2.47	56.03	.19	40.10	.30	ð73.78
2.30	.31	139.72	2.36	53.27	.20	39.55	.29	ð76.10
2.40	.32	134.63	2.28	50.82	.20	39.01	.28	ð78.86
2.50	.34	130.11	2.20	48.23	.21	38.47	.27	ð81.85
2.60	.35	126.08	2.12	45.78	.21	37.90	.26	ð84.98
2.70	.37	122.46	2.04	43.24	.22	37.28	.25	ð88.17
2.80	.38	119.06	1.97	41.09	.22	36.67	.24	ð91.66
2.90	.40	115.90	1.91	38.67	.23	35.90	.23	ð95.45
3.00	.41	113.18	1.85	36.49	.23	35.19	.22	ð99.22

6