DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1716
µ
µ
µ µ
SWITCHING
P-CHANNEL POWER MOS FET
INDUSTRIAL USE
DESCRIPTION
This product is P-Channel MOS Field Effect Transistor designed for DC/DC converters and power management
applications of notebook computers.
FEATURES
Low on-resistance
•
DS(on)1
R
= 12.5 mΩ TYP. (VGS = –10 V, ID = –4 A)
DS(on)2
R
= 17.0 mΩ TYP. (VGS = –4.5 V, ID = –4 A)
DS(on)3
R
= 19.0 mΩ TYP. (VGS = –4.0 V, ID = –4 A)
iss
Low C
•
Built-in G-S protection diode
•
Small and surface mount package (Power SOP8)
•
iss
: C
= 2100 pF TYP.
PACKAGE DRAWING (Unit : mm)
85
14
5.37 Max.
1.44
ORDERING INFORMATION
PART NUMBER PACKAGE
PA1716G Power SOP8
µ
1.8 Max.
0.05 Min.
1.27
0.40
0.78 Max.
+0.10
–0.05
ABSOLUTE MAXIMUM RATINGS (TA = 25°C, All terminals are connected.)
Drain to Source Voltage (VGS = 0 V) V
Gate to Source Voltage (V
DS
= 0 V) V
Drain Current (DC) I
Drain Current (pulse)
Total Power Dissipation (T
Note1
A
= 25°C)
Note2
Channel Temperature T
Storage Temperature T
DSS
GSS
D(DC)
D(pulse)
I
P
ch
stg
–30 V
20 V
#
8 A
#
32 A
#
T
2.0 W
150 °C
–55 to +150 °C
; Source
1,2,3
; Gate
4
; Drain
5,6,7,8
6.0 ±0.3
4.4
+0.10
–0.05
0.15
0.12 M
0.5 ±0.2
EQUIVARENT CIRCUIT
Gate
Gate
Protection
Diode
0.8
0.10
Drain
Body
Diode
Source
Notes 1.
Remark
PW ≤ 10
2.
Mounted on ceramic substrate of 1200 mm
The diode connected between the gate and source of the transistor serves as a protector against ESD.
s, Duty Cycle ≤ 1 %
µ
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. G13727EJ1V0DS00 (1st edition)
Date Published March 1999 NS CP(K)
Printed in Japan
2
x 1.0 mm
©
1998, 1999
ELECTRICAL CHARACTERISTICS (TA = 25 °C, All terminals are connected.)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA1716
DS(on)1
Drain to Source On-state Resi stance
Gate to Source Cut-off Voltage V
R
R
R
DS(on)2
DS(on)3
GS(off)
Forward Transfer Admittance | yfs |
Drain Leakage Current I
Gate to Source Leakage Current I
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
DSS
GSS
iss
oss
rss
d(on)
r
d(off)
f
Total Gate Charge Q
Gate to Source Charge Q
Gate to Drain Charge Q
Body Diode Forward Voltage V
GS
GD
F(S-D)IF
VGS = –10 V, ID = –4.0 A
VGS = –4.5 V, ID = –4.0 A
VGS = –4.0 V, ID = –4.0 A
VDS = –10 V, ID = –1 mA
DS
= –10 V, ID = –4.0 A
V
1.0
–
714 S
12.5 16 m
17 23 m
19 26 m
1.6
–
VDS = –30 V, VGS = 0 V
VGS = 20 V, VDS = 0 V 10
#
G
VDS = –10 V
GS
= 0 V
V
f = 1 MHz
ID = –4.0 A
GS(on)
= –10 V
V
DD
= –15 V
V
G
= 10
R
Ω
ID = –8.0 A
DD
= –24 V
V
GS
= –10 V
V
2100 pF
700 pF
300 pF
30 ns
150 ns
120 ns
76 ns
40 nC
6nC
10 nC
= 8.0 A, VGS = 0 V 0.8 V
Ω
Ω
Ω
2.5
–
1
–
#
V
A
µ
A
µ
Reverse Recovery Time t
Reverse Recovery Charge Q
TEST CIRCUIT 1 SWITCHING TIME
D.U.T.
L
R
VGS
Wave Form
V
DD
ID
Wave Form
PG.
V
GS
0
=
1 µ s
τ
Duty Cycle ≤
τ
R
RG = 10 Ω
1
%
G
rr
IF = 8.0 A, VGS = 0 V
di/dt = 100 A/
rr
VGS
%
10
0
%
10
0
t
d (on)
90 %
ton toff
I
D
µ
90
VGS (on)
D
I
tr td (off) tf
s
%
90 %
10
45 ns
33 nC
TEST CIRCUIT 2 GATE CHARGE
D.U.T.
IG = 2 mA
Ω
PG.
%
50
R
L
V
DD
2
Data Sheet G13727EJ1V0DS00
TYPICAL CHARACTERISTICS (TA = 25 °C)
µ
µ
PA1716
µ µ
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
20
dT - Percentage of Rated Power - %
0
20 40 60 80 100 120 140 160
T
A
- Ambient Temperature - ˚C
FORWARD BIAS SAFE OPERATING AREA
−100
I
D(pulse)
100
ms
10
−10
ID(DC)
Power Dissipation Limited
ms
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
2.8
2.4
2.0
1.6
1.2
0.8
- Total Power Dissipation - W
T
0.4
P
0
20 40 60 80 100 120 140 160
T
A
- Ambient Temperature - ˚C
Remark
1
ms
1200 mm
Mounted on ceramic substrate of
2
x 1.0 mm
Mounted on ceramic
substrate of
2
1200mm x 1.0mm
−1
- Drain Current - A
D
I
TA = 25 ˚C
Single Pulse
−0.1
−0.1
V
DS -
1000
100
10
1
- Transient Thermal Resistance - ˚C/W
th(t)
r
0.1
µ
−1 −10 −100
Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
10
1 m
m
100
m
110
R
th(ch-A)
Mounted on ceramic
of
substrate
Single Pulse
1200 mm2 x 1.0 mm
= 62.5
˚C
1000100100
PW - Pulse Width - s
Data Sheet G13727EJ1V0DS00
3
µµµµ
PA1716
FORWARD TRANSFER CHARACTERISTICS
−100
−10
−1
- Drain Current - A
D
I
A
T
= −25˚C
25˚C
75˚C
125˚C
150˚C
−0.1
0
V
GS
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
T
A
=
10
−2.0−1.0
-
Gate to Source Voltage - V
−50˚C
−25˚C
25˚C
75˚C
125˚C
150˚C
−3.0
Pulsed
V
DS
=
V
DS =
Pulsed
−10 V
−10 V
−4.0
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Pulsed
−40
−0.4
−4.5 V
−0.6
I
−4
D
=
−4 A
V
GS
=
−10 V
−30
−20
- Drain Current - A
D
I
−10
0
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
−0.2
V
DS
- Drain to Source Voltage - V
30
20
10
V
Pulsed
−0.8
| - Forward Transfer Admittance - S
fs
|y
−0.1
−1
ID- Drain Current - A
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
25
V
20
GS = −4
15
- Drain to Source On-state Resistance - mΩ
DS(on)
R
0
−1
I
D
- Drain Current - A
−10 −100
- Drain to Source On-State Resistance - mΩ
−10 V
mA
−15
−10
−100
Pulsed
V
−4.5 V
0
DS(on)
R
GATE TO SOURCE CUTOFF VOLTAGE vs.
CHANNEL TEMPERATURE
−5
V
GS
- Gate to Source Voltage - V
−10
−2.0
−1.5
V
DS =
I
D = −1
−1.0
−10 V
−0.5
- Gate to Source Cut-off Voltage - V
GS(off)
0
V
−50
0
50
T
ch
- Channel Temperature - ˚C
100
150
4
Data Sheet G13727EJ1V0DS00
µ
µ
PA1716
µ µ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
40
36
32
V
28
GS = −4
24
20
16
12
- Drain to Source On-state Resistance - mΩ
8
−50
DS(on)
R
000
1
- Capacitance - pF
rss
100
, C
oss
, C
iss
C
10
−0.1
0
T
ch
- Channel Temperature - ˚C
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
50
100 150
−1 −10
V
DS
- Drain to Source Voltage - V
V
D = −4
I
V
GS = 0
f
= 1
−4.5 V
−10 V
MHz
C
iss
C
oss
C
rss
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
Pulsed
100
10
V
GS = −4
V
1
- Diode Forward Current - A
F
I
0.1
−4.5 V
0 V
A
0
0.5 1.0
V
F
- Source to Drain Voltage - V
1.5
SWITCHING CHARACTERISTICS
000
V
1
t
r
t
d(off)
100
t
f
t
d(on)
- Switching Time - ns
f
, t
10
d(off)
, t
r
, t
d(on)
t
1
−0.1
−1 −10 −100
I
D
- Drain Current - A
V
DS
=
−15 V
V
GS
=
−10 V
R
G
=
10Ω
REVERSE RECOVERY TIME vs.
DIODE CURRENT
100
10
- Reverse Recovery Time - ns
rr
t
1
0.1
1 10 100
I
F
- Diode Current - A
di/dt = 100 A/ s
GS
V
= 0
µ
V
Data Sheet G13727EJ1V0DS00
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
−40
I
−30
VDS = −24 V
−15 V
−6 V
V
GS
−20
−10
- Drain to Source Voltage - V
DS
V
0
V
DS
10 20 30 40 50 60 70
Q
G
- Gate Charge - nC
D
= −8.0 A
−12
−10
−8
−6
−4
- Gate to Source Voltage - V
GS
−2
V
0
5
[MEMO]
µµµµ
PA1716
6
Data Sheet G13727EJ1V0DS00
[MEMO]
µ
µ
PA1716
µ µ
Data Sheet G13727EJ1V0DS00
7
µµµµ
PA1716
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
Loading...