NEC UPA611TA Datasheet
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µµµµ
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
PA611TA
DESCRIPTION
The µPA611TA is a switching device which can be driven directly by a
2.5-V power source.
The µPA611TA has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5-V power source
•
Low gate cut-off voltage
•
ORDERING INFORMATION
PART NUMBER PACKAGE
PA611TA SC-74 (Mini Mold)
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Note
Total Power Dissipation P
Channel Temperature T
Storage Temperature T
Note
PW ≤ 10
s, Duty Cycle ≤ 1 %
µ
DSS
GSS
D(DC)
D(pulse)
I
ch
stg
T
300
–55 to +150 °C
30 V
±20 V
±0.1 A
±0.4 A
(TOTAL)
mW
150 °C
PACKAGE DRAWING (Unit : mm)
+0.1
–0.15
0.65
1.5
2.8 ±0.2
0.32
0.95
1.9
2.9 ±0.2
+0.1
–0.05
0.95
0.16
0 to 0.1
0.8
1.1 to 1.4
EQUIVALENT CIRCUIT
(1/2 Circuit)
Drain
Internal
Gate
Gate
Protection
Diode
Source
Diode
PIN CONNECTION (Top View)
654
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
123
6. Drain 1
+0.1
–0.06
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11707EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
Marking : IB
©
1999
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA611TA
Drain Cut-off Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = 30 V, VGS = 0 V1
GSS
VGS = ±20 V, VDS = 0 V±10
GS(off)VDS
= 3 V, ID = 10 µA 1.0 1.4 1.8 V
A
µ
A
µ
Forward Transfer Admittance | yfs |VDS = 3 V, ID = 10 m A20mS
DS(on)1VGS
Drain to Source On-state Resi stance
R
R
R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
DS(on)2VGS
DS(on)3VGS
iss
oss
rss
d(on)
r
d(off)
f
= 2.5 V, ID = 1 m A815
= 4 V, ID = 10 mA 4 8
= 10 V, ID = 10 mA 3 5
Ω
Ω
Ω
VDS = 3 V9pF
VGS = 0 V12pF
f = 1 MHz 2.1 pF
VDD = 3 V40ns
ID = 10 mA 55 ns
GS(on)
V
= 4 V68ns
Ω,
L
= 300
R
Ω
64 ns
RG = 10
2
Data Sheet D11707EJ1V0DS00
TYPICAL CHARACTERISTICS (TA = 25 °C)
µµµµ
PA611TA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
1
VDS = 3 V
0.1
0.01
0.001
- Drain Current - A
0.0001
D
I
0.00001
0.000001
1.0
30
60
90
TA - Ambient Temperature -
120
˚C
TRANSFER CHARACTERISTICS
= 125˚C
A
T
75˚C
25˚C
−25˚C
2.0
3.0
4.0 5.0
VGS - Gate to Sorce Voltage - V
150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
200
- Drain Current - mA
D
I
100
0
1000
2
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
V
DS
= 3 V
4
DS
- Drain to Source Voltage - V
V
100
10
| - Forward Transfer Admittance - mS
fs
| y
TA = −25
25˚C
75˚C
125˚C
1
0.01 0.10.0010.0001
ID - Drain Current - A
V
GS
= 4 V
3.5 V
3 V
2.5 V
6
810
˚C
1
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
VGS = 2.5 V
15
T
A
= 125
˚C
75
˚C
25
10
−25
˚C
˚C
5
- Drain to Source On-state Resistance - Ω
0
0.0001 0.001 0.1
DS(on)
R
D
- Drain Current - A
I
0.01
15
10
5
- Drain to Source On-state Resistance - Ω
0
0.0001 0.1 1
DS(on)
R
Data Sheet D11707EJ1V0DS00
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
VGS = 4 V
T
A
= 125
˚C
75
˚C
25
˚C
−25
˚C
0.010.001
I
D
- Drain Current - A
3
Loading...