NEC UPA611TA Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µµµµ
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
PA611TA
DESCRIPTION
The µPA611TA is a switching device which can be driven directly by a
2.5-V power source. The µPA611TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5-V power source
Low gate cut-off voltage
ORDERING INFORMATION
PART NUMBER PACKAGE
PA611TA SC-74 (Mini Mold)
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V Gate to Source Voltage V Drain Current (DC) I Drain Current (pulse)
Note
Total Power Dissipation P Channel Temperature T Storage Temperature T
Note
PW ≤ 10
s, Duty Cycle ≤ 1 %
µ
DSS
GSS
D(DC)
D(pulse)
I
ch
stg
T
300
–55 to +150 °C
30 V
±20 V ±0.1 A ±0.4 A
(TOTAL)
mW
150 °C
PACKAGE DRAWING (Unit : mm)
+0.1
–0.15
0.65
1.5
2.8 ±0.2
0.32
0.95
1.9
2.9 ±0.2
+0.1 –0.05
0.95
0.16
0 to 0.1
0.8
1.1 to 1.4
EQUIVALENT CIRCUIT
(1/2 Circuit)
Drain
Internal
Gate
Gate Protection Diode
Source
Diode
PIN CONNECTION (Top View)
654
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
123
6. Drain 1
+0.1 –0.06
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D11707EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K) Printed in Japan
Marking : IB
©
1999
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA611TA
Drain Cut-off Current I Gate Leakage Current I Gate Cut-off Voltage V
DSS
VDS = 30 V, VGS = 0 V1
GSS
VGS = ±20 V, VDS = 0 V±10
GS(off)VDS
= 3 V, ID = 10 µA 1.0 1.4 1.8 V
A
µ
A
µ
Forward Transfer Admittance | yfs |VDS = 3 V, ID = 10 m A20mS
DS(on)1VGS
Drain to Source On-state Resi stance
R R
R Input Capacitance C Output Capacitance C Reverse Transfer Capacitance C Turn-on Delay Time t Rise Time t Turn-off Delay Time t Fall Time t
DS(on)2VGS
DS(on)3VGS
iss
oss
rss
d(on)
r
d(off)
f
= 2.5 V, ID = 1 m A815 = 4 V, ID = 10 mA 4 8 = 10 V, ID = 10 mA 3 5
Ω Ω Ω
VDS = 3 V9pF VGS = 0 V12pF f = 1 MHz 2.1 pF VDD = 3 V40ns ID = 10 mA 55 ns
GS(on)
V
= 4 V68ns
Ω,
L
= 300
R
64 ns
RG = 10
2
Data Sheet D11707EJ1V0DS00
TYPICAL CHARACTERISTICS (TA = 25 °C)
µµµµ
PA611TA
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
1
VDS = 3 V
0.1
0.01
0.001
- Drain Current - A
0.0001
D
I
0.00001
0.000001
1.0
30
60
90
TA - Ambient Temperature -
120
˚C
TRANSFER CHARACTERISTICS
= 125˚C
A
T
75˚C 25˚C
25˚C
2.0
3.0
4.0 5.0
VGS - Gate to Sorce Voltage - V
150
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
400
300
200
- Drain Current - mA
D
I
100
0
1000
2
FORWARD TRANSFER ADMMITTANCE Vs. DRAIN CURRENT
V
DS
= 3 V
4
DS
- Drain to Source Voltage - V
V
100
10
| - Forward Transfer Admittance - mS
fs
| y
TA = 25
25˚C 75˚C
125˚C
1
0.01 0.10.0010.0001
ID - Drain Current - A
V
GS
= 4 V
3.5 V
3 V
2.5 V
6
810
˚C
1
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
20
VGS = 2.5 V
15
T
A
= 125
˚C
75
˚C
25
10
25
˚C ˚C
5
- Drain to Source On-state Resistance -
0
0.0001 0.001 0.1
DS(on)
R
D
- Drain Current - A
I
0.01
15
10
5
- Drain to Source On-state Resistance -
0
0.0001 0.1 1
DS(on)
R
Data Sheet D11707EJ1V0DS00
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
VGS = 4 V
T
A
= 125
˚C
75
˚C
25
˚C
25
˚C
0.010.001
I
D
- Drain Current - A
3
µµµµ
PA611TA
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
10
VGS = 10 V
8
6
4
2
- Drain to Source On-state Resistance -
0
DS(on)
R
100
f = 1 MHz
V
GS
= 0 V
10
- Capacitance - pF
rss
, C
oss
1
, C
iss
C
0.1
T
A
= 125
˚C
75
˚C
25
˚C
25
˚C
0.010.0010.0001
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
0.1
VDS - Drain to Source Voltage - V
10.01 100
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
30
ID = 1 mA
10 mA
20
100 mA
10
- Drain to Source On-state Resistance -
DS (on)
0
10.1
R
48
12 16
20
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
C
iss
C
oss
100
C
rss
, tf - Swwitchig Time - ns
(off)
DD
= 3 V
V
, tr, td
V
GS(on)
(on)
td
10
G
R
= 4V
= 10
t
t t
r
t
f
d(on) d(off)
0.1 1 10
D
- Drain Current - A
I
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
0.1
0.01
0.001
- Source to Drain Current - A
F
I
0.0001
0.60.4
V
F(S-D)
- Source to Drain Voltage - V
0.8
4
1.0
1.2
Data Sheet D11707EJ1V0DS00
REFERENCE
Document Name Document No.
NEC semiconductor device reliability / qualit y c ont rol s ys t em TEI-1202 Quality grade on NEC semiconductor devices C11531E Semiconductor devic e mounting technology manual C10535E Guide to quality assurance for semiconductor devices MEI-1202 Semiconductor sel ection guide X10679E
µµµµ
PA611TA
Data Sheet D11707EJ1V0DS00
5
[MEMO]
µµµµ
PA611TA
6
Data Sheet D11707EJ1V0DS00
[MEMO]
µµµµ
PA611TA
Data Sheet D11707EJ1V0DS00
7
µµµµ
PA611TA
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others.
Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8
Loading...