NEC Electronics Inc UPA611TA Datasheet

DATA SHEET

MOS FIELD EFFECT TRANSISTOR

μPA611TA

N-CHANNEL MOS FIELD EFFECT TRANSISTOR

FOR HIGH SPEED SWITCHING

DESCRIPTION

The μPA611TA is a switching device which can be driven directly by a 2.5-V power source.

The μPA611TA has excellent switching characteristics, and is suitable for use as a high-speed switching device in digital circuits.

FEATURES

∙Can be driven by a 2.5-V power source

∙Low gate cut-off voltage

ORDERING INFORMATION

PART NUMBER	PACKAGE
μPA611TA	SC-74 (Mini Mold)

ABSOLUTE MAXIMUM RATINGS (TA = 25°C)

Drain to Source Voltage	VDSS	30	V
Gate to Source Voltage	VGSS	±20	V
Drain Current (DC)	ID(DC)	±0.1	A
Drain Current (pulse) Note	ID(pulse)	±0.4	A
Total Power Dissipation	PT	300 (TOTAL)	mW
Channel Temperature	Tch	150	°C
Storage Temperature	Tstg	–55 to +150	°C

Note PW ≤ 10 μs, Duty Cycle ≤ 1 %

PACKAGE DRAWING (Unit : mm)

	+0.1	–0.15	0.32	+0.1
	0.65
				–0.05	0.16	+0.1
						–0.06
2.8±0.2	1.5				0 to 0.1
			0.95 0.95		0.8
			1.9		1.1 to 1.4
			2.9 ±0.2

EQUIVALENT CIRCUIT

(1/2 Circuit)

Drain

	Internal
Gate	Diode
Gate
Protection
Diode	Source

PIN CONNECTION (Top View)

6 5 4

1. Source 1

2. Source 2

3. Gate 2

4. Drain 2

5. Gate 1

1 2 3 6. Drain 1

Marking : IB

Remark The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. D11707EJ1V0DS00 (1st edition) Date Published August 1999 NS CP(K)

Printed in Japan

© 1999

μPA611TA

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

CHARACTERISTICS	SYMBOL	TEST CONDITIONS	MIN.	TYP.	MAX.	UNIT
Drain Cut-off Current	IDSS	VDS = 30 V, VGS = 0 V			1	μA
Gate Leakage Current	IGSS	VGS = ±20 V, VDS = 0 V			±10	μA
Gate Cut-off Voltage	VGS(off)	VDS = 3 V, ID = 10 μA	1.0	1.4	1.8	V
Forward Transfer Admittance	| yfs |	VDS = 3 V, ID = 10 m A	20			mS
Drain to Source On-state Resistance	RDS(on)1	VGS = 2.5 V, ID = 1 m A		8	15	Ω
	RDS(on)2	VGS = 4 V, ID = 10 mA		4	8	Ω
	RDS(on)3	VGS = 10 V, ID = 10 mA		3	5	Ω
Input Capacitance	Ciss	VDS = 3 V		9		pF
Output Capacitance	Coss	VGS = 0 V		12		pF
Reverse Transfer Capacitance	Crss	f = 1 MHz		2.1		pF
Turn-on Delay Time	td(on)	VDD = 3 V		40		ns
Rise Time	tr	ID = 10 mA		55		ns
Turn-off Delay Time	td(off)	VGS(on) = 4 V		68		ns
		RG = 10 Ω, RL = 300 Ω
Fall Time	tf			64		ns

2	Data Sheet D11707EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = 25 °C)

DERATING FACTOR OF FORWARD BIAS

SAFE OPERATING AREA

	100
- %	80
Factor	60
dT - Derating	40
	20
	0	30	60	90	120	150
		TA - Ambient Temperature - ˚C

TRANSFER CHARACTERISTICS

	1
	VDS = 3 V
- A	0.1
Current	0.01
	0.001		TA = 125˚C
- Drain
			75˚C
			25˚C
	0.0001		−25˚C
D
I
0.00001
0.000001		2.0	3.0	4.0	5.0
	1.0

VGS - Gate to Sorce Voltage - V

			DRAIN TO SOURCE ON-STATE
Ω			RESISTANCE vs. DRAIN CURRENT
-	20
Resistance
		VGS	= 2.5 V
	15
state-
			T		=	75	˚C
				A		125	˚C
On						25	˚C
to Source	10					−25	˚C
	5
- Drain	0
RDS(on)
	0.0001		0.001					0.01												0.1

ID - Drain Current - A

μPA611TA

			DRAIN CURRENT vs.
			DRAIN TO SOURCE VOLTAGE
mA	400								VGS
	300									= 4	V
-
Current
	200									3.5 V
- Drain
											3 V
ID	100
											2.5 V
	0		2		4		6		8				10
				VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMMITTANCE Vs.

DRAIN CURRENT

	1000
- mS	VDS = 3 V
Transfer Admittance	100
Forward	10		TA = −25˚C
			25˚C
			75˚C
-			125˚C
yfs |
|
	1
	0.0001	0.001	0.01	0.1	1
			ID - Drain Current - A

			DRAIN TO SOURCE ON-STATE
Ω			RESISTANCE vs. DRAIN CURRENT
-	15
Resistance		VGS = 4 V
state-On	10
Source
										TA	=	125				˚C
	5											75				˚C
to												25				˚C
												−25				˚C
- Drain
	0
RDS(on)
	0.0001		0.001									0.01										0.1										1

ID - Drain Current - A

Data Sheet D11707EJ1V0DS00

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