DATA SHEET
MOS FIELD EFFECT TRANSISTOR
µµµµ
N-CHANNEL MOS FIELD EFFECT TRANSISTOR
FOR HIGH SPEED SWITCHING
PA611TA
DESCRIPTION
The µPA611TA is a switching device which can be driven directly by a
2.5-V power source.
The µPA611TA has excellent switching characteristics, and is suitable for
use as a high-speed switching device in digital circuits.
FEATURES
Can be driven by a 2.5-V power source
•
Low gate cut-off voltage
•
ORDERING INFORMATION
PART NUMBER PACKAGE
PA611TA SC-74 (Mini Mold)
µ
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage V
Gate to Source Voltage V
Drain Current (DC) I
Drain Current (pulse)
Note
Total Power Dissipation P
Channel Temperature T
Storage Temperature T
Note
PW ≤ 10
s, Duty Cycle ≤ 1 %
µ
DSS
GSS
D(DC)
D(pulse)
I
ch
stg
T
300
–55 to +150 °C
30 V
±20 V
±0.1 A
±0.4 A
(TOTAL)
mW
150 °C
PACKAGE DRAWING (Unit : mm)
+0.1
–0.15
0.65
1.5
2.8 ±0.2
0.32
0.95
1.9
2.9 ±0.2
+0.1
–0.05
0.95
0.16
0 to 0.1
0.8
1.1 to 1.4
EQUIVALENT CIRCUIT
(1/2 Circuit)
Drain
Internal
Gate
Gate
Protection
Diode
Source
Diode
PIN CONNECTION (Top View)
654
1. Source 1
2. Source 2
3. Gate 2
4. Drain 2
5. Gate 1
123
6. Drain 1
+0.1
–0.06
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage
exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D11707EJ1V0DS00 (1st edition)
Date Published August 1999 NS CP(K)
Printed in Japan
Marking : IB
©
1999
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
CHARACTERISTICS SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
µµµµ
PA611TA
Drain Cut-off Current I
Gate Leakage Current I
Gate Cut-off Voltage V
DSS
VDS = 30 V, VGS = 0 V1
GSS
VGS = ±20 V, VDS = 0 V±10
GS(off)VDS
= 3 V, ID = 10 µA 1.0 1.4 1.8 V
A
µ
A
µ
Forward Transfer Admittance | yfs |VDS = 3 V, ID = 10 m A20mS
DS(on)1VGS
Drain to Source On-state Resi stance
R
R
R
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Turn-on Delay Time t
Rise Time t
Turn-off Delay Time t
Fall Time t
DS(on)2VGS
DS(on)3VGS
iss
oss
rss
d(on)
r
d(off)
f
= 2.5 V, ID = 1 m A815
= 4 V, ID = 10 mA 4 8
= 10 V, ID = 10 mA 3 5
Ω
Ω
Ω
VDS = 3 V9pF
VGS = 0 V12pF
f = 1 MHz 2.1 pF
VDD = 3 V40ns
ID = 10 mA 55 ns
GS(on)
V
= 4 V68ns
Ω,
L
= 300
R
Ω
64 ns
RG = 10
2
Data Sheet D11707EJ1V0DS00
TYPICAL CHARACTERISTICS (TA = 25 °C)
µµµµ
PA611TA
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
100
80
60
40
dT - Derating Factor - %
20
0
1
VDS = 3 V
0.1
0.01
0.001
- Drain Current - A
0.0001
D
I
0.00001
0.000001
1.0
30
60
90
TA - Ambient Temperature -
120
˚C
TRANSFER CHARACTERISTICS
= 125˚C
A
T
75˚C
25˚C
−25˚C
2.0
3.0
4.0 5.0
VGS - Gate to Sorce Voltage - V
150
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
400
300
200
- Drain Current - mA
D
I
100
0
1000
2
FORWARD TRANSFER ADMMITTANCE Vs.
DRAIN CURRENT
V
DS
= 3 V
4
DS
- Drain to Source Voltage - V
V
100
10
| - Forward Transfer Admittance - mS
fs
| y
TA = −25
25˚C
75˚C
125˚C
1
0.01 0.10.0010.0001
ID - Drain Current - A
V
GS
= 4 V
3.5 V
3 V
2.5 V
6
810
˚C
1
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
20
VGS = 2.5 V
15
T
A
= 125
˚C
75
˚C
25
10
−25
˚C
˚C
5
- Drain to Source On-state Resistance - Ω
0
0.0001 0.001 0.1
DS(on)
R
D
- Drain Current - A
I
0.01
15
10
5
- Drain to Source On-state Resistance - Ω
0
0.0001 0.1 1
DS(on)
R
Data Sheet D11707EJ1V0DS00
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
VGS = 4 V
T
A
= 125
˚C
75
˚C
25
˚C
−25
˚C
0.010.001
I
D
- Drain Current - A
3
µµµµ
PA611TA
DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
10
VGS = 10 V
8
6
4
2
- Drain to Source On-state Resistance - Ω
0
DS(on)
R
100
f = 1 MHz
V
GS
= 0 V
10
- Capacitance - pF
rss
, C
oss
1
, C
iss
C
0.1
T
A
= 125
˚C
75
˚C
25
˚C
−25
˚C
0.010.0010.0001
I
D
- Drain Current - A
CAPACITANCE vs. DRAIN TO
SOURCE VOLTAGE
0.1
VDS - Drain to Source Voltage - V
10.01 100
10
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
30
ID = 1 mA
10 mA
20
100 mA
10
- Drain to Source On-state Resistance - Ω
DS (on)
0
10.1
R
48
12 16
20
VGS - Gate to Source Voltage - V
SWITCHING CHARACTERISTICS
1000
C
iss
C
oss
100
C
rss
, tf - Swwitchig Time - ns
(off)
DD
= 3 V
V
, tr, td
V
GS(on)
(on)
td
10
G
R
= 4V
= 10 Ω
t
t
t
r
t
f
d(on)
d(off)
0.1 1 10
D
- Drain Current - A
I
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1
0.1
0.01
0.001
- Source to Drain Current - A
F
I
0.0001
0.60.4
V
F(S-D)
- Source to Drain Voltage - V
0.8
4
1.0
1.2
Data Sheet D11707EJ1V0DS00
REFERENCE
Document Name Document No.
NEC semiconductor device reliability / qualit y c ont rol s ys t em TEI-1202
Quality grade on NEC semiconductor devices C11531E
Semiconductor devic e mounting technology manual C10535E
Guide to quality assurance for semiconductor devices MEI-1202
Semiconductor sel ection guide X10679E
µµµµ
PA611TA
Data Sheet D11707EJ1V0DS00
5
[MEMO]
µµµµ
PA611TA
6
Data Sheet D11707EJ1V0DS00
[MEMO]
µµµµ
PA611TA
Data Sheet D11707EJ1V0DS00
7
µµµµ
PA611TA
• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8
Loading...