NEC UPA803T Datasheet
PRELIMINARY DATA SHEET
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
µ
PA803T has built-in 2 transistors which were developed for UHF.
FEATURES
• High fT
fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz)
• Small Collector Capacitance
Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz)
• A Surface Mounting Package Adopted
• Built-in 2 Transistors (2 × 2SC4570)
SILICON TRANSISTOR
µ
PA803T
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
–0
+0.1
0.2
1.3
2.0±0.2
0.650.65
123
XY
654
ORDERING INFORMATION
PART NUMBER
µ
PA803T Loose products Embossed tape 8 mm wide. Pin 6 (Q1
µ
PA803T-T1 Taping products
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
QUANTITY PACKING STYLE
(50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
(3 KPCS/Reel)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 12 V
Emitter to Base Voltage VEBO 3V
Collector Current IC 30 mA
Total Power Dissipation PT 120 in 1 element mW
160 in 2 elements
Junction Temperature Tj 125 ˚C
Storage Temperature Tstg –55 to +125 ˚C
Note
0.7
0.9±0.1
654
1
Q
123
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
0~0.1
Q2
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
+0.1
–0
0.15
Note 90 mW must not be exceeded in 1 element.
Document No. ID-3637
(O.D. No. ID-9144)
Date Published April 1995 P
Printed in Japan
The information in this document is subject to change without notice.
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 15 V, IE = 0 0.1
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.1
Collector to Emitter VCE (sat) hFE = 10, IC = 5 mA 0.5 V
Saturation Voltage
DC Current Gain hFE VCE = 5 V, IC = 5 mA
Gain Bandwidth Product fT VCE = 5 V, IC = 5 mA, f = 1 GHz 3.0 5.5 GHz
Feed-back Capacitance Cre VCB = 5 V, IE = 0, f = 1 MHz
Insertion Power Gain |S21|
2
VCE = 5 V, IC = 5 mA, f = 1 GHz 5 dB
hFE Ratio hFE1/hFE2 VCE = 5 V, IC = 5 mA 0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
Note 1
Note 2
60 200
0.7 0.9 pF
µ
PA803T
µ
A
µ
A
hFE CLASSIFICATION
Rank FB GB
Marking T73 T74
hFE Value 60 to 120 100 to 200
TYPICAL CHARACTERISTICS (TA = 25 °C)
PT - TA Characteristics
150
(mW)
T
100
50
Total Power Dissipation P
0
160 mW
120 mW
Per Element
50 100 150
Ambient Temperature TA (°C)
2 Elements in Total
Free Air
24
VCE = 5 V
(mA)
C
16
8
Collector Current I
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage V
IC - VBE Characteristics
BE
(V)
2
µ
PA803T
IC - VCE Characteristics
30
(mA)
C
20
10
Collector Current I
0
2 4 6 8 10
Collector to Emitter Voltage VCE (V)
T
- IC Characteristics
f
8
f = 1 GHz
(GHz)
T
6
4
2
Gain Bandwidth Product f
0
1 2 5 10 20 50 100
0.5
Collector Current IC (mA)
3 V
B
= 160 A
I
140 A
120 A
100 A
VCE = 5 V
µ
µ
µ
µ
80 A
µ
60 A
µ
40 A
µ
20 A
µ
FE
- IC Characteristics
h
200
100
FE
50
DC Current Gain h
20
10
0.5 1 2 5 10 20 50
Collector Current IC (mA)
21e
l 2 - IC Characteristics
l S
16
(dB)
2
l
12
21e
V
CE
= 5 V
8
4
Insertion Power Gain l S
0
0.5
1
2 5 10 20 50
Collector Current IC (mA)
VCE = 5 V
f = 1 GHz
3 V
l S
25
(dB)
2
20
l
21e
15
10
5
Insertion Power Gain l S
0
0.1
0.2 0.5 1.0 2.0 5.0
21e
l 2 - f Characteristics
Frequency f (GHz)
VCE = 5 V
3 V
IC = 5 mA
ob
C
2.0
(pF)
1.0
ob
0.7
0.5
0.2
Collector Copacitance C
0.1
1
2 5 7 10 20
Collector to Base Voltage VCB (V)
- VCB Characteristics
f = 1 MHz
3
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