NEC Electronics Inc UPA806T Datasheet

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NEC Electronics Inc UPA806T Datasheet

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

μPA806T

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD

FEATURES

Low Noise, High Gain

Operable at Low Voltage

Small Feed-back Capacitance Cre = 0.4 pF TYP.

Built-in 2 Transistors (2 × 2SC4959)

ORDERING INFORMATION

PART NUMBER

QUANTITY

PACKING STYLE

 

 

 

μPA806T

Loose products

Embossed tape 8 mm wide. Pin 6 (Q1

 

(50 PCS)

Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)

 

 

face to perforation side of the tape.

 

 

 

μPA806T-T1

Taping products

 

 

(3 KPCS/Reel)

 

 

 

 

Remark If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

SYMBOL

RATING

UNIT

 

 

 

 

Collector to Base Voltage

VCBO

9

V

 

 

 

 

Collector to Emitter Voltage

VCEO

6

V

 

 

 

 

Emitter to Base Voltage

VEBO

2

V

 

 

 

 

Collector Current

IC

30

mA

 

 

 

 

Total Power Dissipation

PT

150 in 1 element

mW

 

 

200 in 2 elementsNote

 

Junction Temperature

Tj

150

˚C

 

 

 

 

Storage Temperature

Tstg

–65 to +150

˚C

 

 

 

 

Note 110 mW must not be exceeded in 1 element.

PACKAGE DRAWINGS

(Unit: mm)

2.1±0.1

1.25±0.1

 

 

 

 

 

 

+0.1

–0

2.0±0.2

1.3

0.65 0.65

2 1

Y X

5 6

0.2

 

 

 

3

 

4

 

 

0.9±0.1

0.7

+0.1

–0

 

0~0.1

0.15

PIN CONFIGURATION (Top View)

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

 

5

4

 

 

 

Q1

 

 

 

 

 

Q2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

3

 

 

 

 

 

 

 

 

 

 

 

 

PIN CONNECTIONS

 

1.

Collector (Q1)

4.

Emitter (Q2)

2.

Emitter (Q1)

5.

Base (Q2)

3.

Collector (Q2)

6.

Base (Q1)

The information in this document is subject to change without notice.

Document No. ID-3640

(O.D. No. ID-9147)

Date Published

April 1995 P

 

 

Printed in Japan

©

 

1995

 

 

 

 

 

 

 

 

 

 

μPA806T

 

ELECTRICAL CHARACTERISTICS

(TA = 25 °C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

 

CONDITION

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0

 

 

0.1

μA

 

 

 

 

 

 

 

 

 

 

 

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

 

 

0.1

μA

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

VCE = 3 V, IC = 10 mANote 1

75

 

150

 

 

 

Gain Bandwidth Product

fT

VCE = 3

V, IC = 10 mA, f = 2 GHz

 

12

 

GHz

 

 

 

 

 

 

 

 

 

 

 

Feed-back Capacitance

Cre

VCB = 3 V, IE = 0, f = 1 MHzNote 2

 

0.4

0.7

pF

 

 

Insertion Power Gain

|S21|2

VCE = 3

V, IC = 10 mA, f = 2 GHz

7

8.5

 

dB

 

 

Noise Figure

NF

VCE = 3

V, IC = 3 mA, f = 2 GHz

 

1.5

2.5

dB

 

 

 

 

 

 

 

 

 

 

 

 

hFE Ratio

hFE1/hFE2

VCE = 3

V, IC = 10 mA

0.85

 

 

 

 

 

 

 

A smaller value among

 

 

 

 

 

 

 

 

hFE of hFE1 = Q1, Q2

 

 

 

 

 

 

 

 

A larger value among

 

 

 

 

 

 

 

 

hFE of hFE2 = Q1, Q2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes 1. Pulse Measurement: Pw 350 μs, Duty cycle 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

KB

 

 

Marking

T83

 

 

hFE Value

75 to 150

 

 

TYPICAL CHARACTERISTICS (TA = 25 °C)

 

TOTAL POWER DISSIPATION

 

(mW)PT

vs. AMBIENT TEMPERATURE

 

 

 

 

 

Free Air

(mA)

 

 

 

 

 

 

200

2

 

 

 

 

 

 

Elements

 

 

 

DissipationPowerTotal

 

 

 

CurrentCollectorIC

Per

 

in

Total

 

 

 

Element

 

100

 

 

 

 

 

 

 

 

 

 

0

 

50

 

100

150

 

Ambient Temperature TA (°C)

 

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

50

VCE = 3 V

40

30

20

10

0

0.5

1.0

Base to Emitter Voltage VBE (V)

2

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