NEC Electronics Inc UPA806T Datasheet
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PRELIMINARY DATA SHEET
SILICON TRANSISTOR
μPA806T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
•Low Noise, High Gain
•Operable at Low Voltage
•Small Feed-back Capacitance Cre = 0.4 pF TYP.
•Built-in 2 Transistors (2 × 2SC4959)
ORDERING INFORMATION
PART NUMBER |
QUANTITY |
PACKING STYLE |
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μPA806T |
Loose products |
Embossed tape 8 mm wide. Pin 6 (Q1 |
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(50 PCS) |
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) |
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face to perforation side of the tape. |
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μPA806T-T1 |
Taping products |
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(3 KPCS/Reel) |
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Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER |
SYMBOL |
RATING |
UNIT |
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Collector to Base Voltage |
VCBO |
9 |
V |
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Collector to Emitter Voltage |
VCEO |
6 |
V |
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Emitter to Base Voltage |
VEBO |
2 |
V |
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Collector Current |
IC |
30 |
mA |
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Total Power Dissipation |
PT |
150 in 1 element |
mW |
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200 in 2 elementsNote |
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Junction Temperature |
Tj |
150 |
˚C |
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Storage Temperature |
Tstg |
–65 to +150 |
˚C |
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Note 110 mW must not be exceeded in 1 element.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
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+0.1 |
–0 |
2.0±0.2 |
1.3 |
0.65 0.65 |
2 1 |
Y X |
5 6 |
0.2 |
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3 |
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4 |
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0.9±0.1 |
0.7 |
+0.1 |
–0 |
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0~0.1 |
0.15 |
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PIN CONFIGURATION (Top View)
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6 |
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5 |
4 |
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Q1 |
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Q2 |
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1 |
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2 |
3 |
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PIN CONNECTIONS |
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1. |
Collector (Q1) |
4. |
Emitter (Q2) |
2. |
Emitter (Q1) |
5. |
Base (Q2) |
3. |
Collector (Q2) |
6. |
Base (Q1) |
The information in this document is subject to change without notice.
Document No. ID-3640
(O.D. No. ID-9147)
Date Published |
April 1995 P |
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Printed in Japan |
© |
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1995 |
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μPA806T |
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ELECTRICAL CHARACTERISTICS |
(TA = 25 °C) |
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PARAMETER |
SYMBOL |
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CONDITION |
MIN. |
TYP. |
MAX. |
UNIT |
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Collector Cutoff Current |
ICBO |
VCB = 5 V, IE = 0 |
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0.1 |
μA |
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Emitter Cutoff Current |
IEBO |
VEB = 1 V, IC = 0 |
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0.1 |
μA |
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DC Current Gain |
hFE |
VCE = 3 V, IC = 10 mANote 1 |
75 |
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150 |
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Gain Bandwidth Product |
fT |
VCE = 3 |
V, IC = 10 mA, f = 2 GHz |
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12 |
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GHz |
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Feed-back Capacitance |
Cre |
VCB = 3 V, IE = 0, f = 1 MHzNote 2 |
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0.4 |
0.7 |
pF |
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Insertion Power Gain |
|S21|2 |
VCE = 3 |
V, IC = 10 mA, f = 2 GHz |
7 |
8.5 |
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dB |
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Noise Figure |
NF |
VCE = 3 |
V, IC = 3 mA, f = 2 GHz |
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1.5 |
2.5 |
dB |
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hFE Ratio |
hFE1/hFE2 |
VCE = 3 |
V, IC = 10 mA |
0.85 |
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A smaller value among |
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hFE of hFE1 = Q1, Q2 |
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A larger value among |
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hFE of hFE2 = Q1, Q2 |
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Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank |
KB |
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Marking |
T83 |
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hFE Value |
75 to 150 |
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TYPICAL CHARACTERISTICS (TA = 25 °C)
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TOTAL POWER DISSIPATION |
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(mW)PT |
vs. AMBIENT TEMPERATURE |
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Free Air |
(mA) |
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200 |
2 |
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Elements |
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DissipationPowerTotal |
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CurrentCollectorIC |
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Per |
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in |
Total |
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Element |
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100 |
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0 |
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50 |
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100 |
150 |
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Ambient Temperature TA (°C) |
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COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
50
VCE = 3 V
40
30
20
10
0 |
0.5 |
1.0 |
Base to Emitter Voltage VBE (V)
2