PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA805T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES PACKAGE DRAWINGS
• Low Noise, High Gain (Unit: mm)
• Operable at Low Voltage
• Small Feed-back Capacitance
re = 0.3 pF TYP.
C
• Built-in 2 Transistors (2 × 2SC4958)
ORDERING INFORMATION
1.3
2.0±0.2
0.650.65
2.1±0.1
1.25±0.1
123
XY
654
–0
+0.1
0.2
PART NUMBER
µ
PA805T Loose products Embossed tape 8 mm wide. Pin 6 (Q1
µ
PA805T-T1 Taping products
Remark If you require an evaluation sample, please contact an NEC
QUANTITY PACKING STYLE
(50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
(3 KPCS/Reel)
PIN CONFIGURATION (Top View)
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 10 mA
Total Power Dissipation PT 60 in 1 element mW
120 in 2 elements
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Note
0.7
0.9±0.1
654
1
Q
123
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
0~0.1
Q
2
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
+0.1
–0
0.15
Note 110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. ID-3639
(O.D. No. ID-9146)
Date Published April 1995 P
Printed in Japan
The information in this document is subject to change without notice.
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 0.1
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.1
DC Current Gain hFE VCE = 3 V, IC = 5 mA
Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA, f = 2 GHz 12 GHz
Feed-back Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHz
Insertion Power Gain |S21|
2
VCE = 3 V, IC = 5 mA, f = 2 GHz 7 8.5 dB
Noise Figure NF VCE = 3 V, IC = 3 mA, f = 2 GHz 2.5 4 dB
hFE Ratio hFE1/hFE2 VCE = 3 V, IC = 5 mA 0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
Note 1
Note 2
75 150
0.3 0.5 pF
µ
PA805T
µ
A
µ
A
hFE CLASSIFICATION
Rank KB
Marking T82
hFE Value 75 to 150
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Free Air
200
(mW)
T
2 Elements in Total
100
Per Element
Total Power Dissipation P
0 50 100 150
Ambient Temperature T
COLLECTOR CURRENT
vs. COLLECTOR TO EMITTER VOLTAGE
40
60 mW
120 mW
A
(°C)
COLLECTOR CURRENT
vs. BASE TO EMITTER VOLTAGE
50
V
CE
= 3 V
40
(mA)
C
30
20
Collector Current I
10
0
Base to Emitter Voltage VBE (V)
200
0.5 1
DC CURRENT GAIN
vs. COLLECTOR CURRENT
30
(mA)
C
µ
20
10
Collector Current I
0 246
Collector to Emitter Voltage VCE (V)
500 A
400 A
300 A
200 A
B
= 100 A
I
µ
µ
µ
µ
FE
100
DC Current Gain h
0
0.1
VCE = 3 V
0.5 1 5 10 50 100
Collector Current IC (mA)
5 V
2
µ
PA805T
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
14
f = 2 GHz
12
10
8
6
4
Gain Bandwidth Product fT (GHz)
2
0.5
12 51020
Collector Current I
NOISE FIGURE
5
4
3
2
Noise Figure NF (dB)
1
0
0.52012 510
vs. COLLECTOR CURRENT
Collector Current IC (mA)
C (mA)
5 V
3 V
VCE = 1 V
f = 2 GHz
V
CE = 3 V
(dB)
2
Insertion Power Gain l S21e l
Feed-back Capacitance Cre (pF)
INSERTION GAIN
vs. COLLECTOR CURRENT
f = 2 GHz
1 5 10 50202
Collector Current IC (mA)
FEED-BACK CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
12 510
Collector to Base Voltage V
0.5
0.4
0.3
0.2
0.1
12
10
8
6
4
0.5
0
0.5
5 V
3 V
VCE = 1 V
f = 1 MHz
20
CB (V)
3
S-PARAMETERS
VCE = 3 V, IC = 1 mA, ZO = 50 Ω
f S11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.200 0.9410 –9.3 3.3070 167.3 0.0330 82.8 0.9900 –6.8
0.200 0.9280 –17.7 3.1860 156.0 0.0650 78.5 0.9540 –13.7
0.600 0.8670 –26.0 3.0130 144.9 0.0930 71.1 0.9250 –19.5
0.800 0.8150 –33.6 2.8740 134.6 0.1160 67.0 0.8730 –24.9
1.000 0.7280 –41.5 2.6360 124.4 0.1330 59.7 0.8250 –29.5
1.200 0.6700 –47.3 2.5360 115.5 0.1480 59.1 0.7920 –33.6
1.400 0.5970 –51.7 2.3840 107.7 0.1710 53.6 0.7640 –36.6
1.600 0.5430 –56.3 2.2170 100.7 0.1820 52.0 0.7180 –39.9
1.800 0.5040 –60.7 2.0650 95.0 0.1990 49.8 0.6810 –42.4
2.000 0.4350 –64.4 2.0420 88.3 0.2040 51.6 0.6600 –46.9
2.200 0.3920 –69.4 1.9690 82.0 0.2270 48.3 0.6210 –50.1
2.400 0.3560 –71.5 1.8470 76.6 0.2320 50.1 0.6040 –51.8
2.600 0.3240 –81.1 1.7690 71.1 0.2420 46.4 0.5840 –53.6
2.800 0.3120 –76.7 1.7240 68.1 0.2520 45.1 0.5660 –57.6
3.000 0.2450 –85.1 1.6690 63.2 0.2670 45.3 0.5410 –58.3
VCE = 3 V, IC = 3 mA, ZO = 50 Ω
f S11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.200 0.8480 –15.9 7.7420 158.5 0.0320 79.4 0.9640 –11.3
0.400 0.7640 –27.6 6.8190 141.1 0.0560 68.2 0.8730 –20.5
0.600 0.6470 –37.3 5.8070 127.1 0.0770 66.9 0.7950 –26.1
0.800 0.5600 –44.1 5.0060 116.0 0.1000 64.5 0.7140 –30.2
1.000 0.4650 –49.4 4.2790 106.6 0.1110 64.1 0.6540 –33.0
1.200 0.4050 –51.9 3.8350 98.8 0.1250 62.2 0.6250 –34.4
1.400 0.3470 –53.4 3.4290 92.4 0.1340 62.6 0.5850 –36.3
1.600 0.3040 –55.0 3.0820 86.6 0.1570 60.9 0.5530 –38.2
1.800 0.2790 –55.7 2.7740 82.3 0.1840 60.8 0.5450 –39.3
2.000 0.2260 –53.6 2.6370 77.1 0.1910 57.5 0.5140 –42.2
2.200 0.2090 –57.9 2.4900 72.2 0.2090 59.4 0.5020 –45.3
2.400 0.1820 –53.8 2.2890 67.9 0.2260 58.1 0.4850 –46.1
2.600 0.1600 –67.3 2.1710 63.7 0.2280 53.4 0.4680 –47.9
2.800 0.1650 –58.5 2.0820 61.3 0.2580 57.0 0.4650 –51.6
3.000 0.1210 –51.3 2.0030 57.3 0.2670 52.6 0.4490 –51.4
µ
PA805T
VCE = 3 V, IC = 5 mA, ZO = 50 Ω
f S11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
0.200 0.7750 –19.9 10.2330 153.0 0.0290 78.0 0.9310 –14.4
0.400 0.6530 –32.4 8.4080 133.2 0.0560 66.1 0.8150 –23.3
0.600 0.5270 –39.8 6.7610 119.0 0.0730 70.0 0.7170 –27.3
0.800 0.4470 –45.7 5.5980 108.5 0.0880 67.6 0.6390 –30.3
1.000 0.3590 –49.6 4.6700 100.0 0.1110 66.9 0.5950 –31.2
1.200 0.3140 –50.3 4.1180 92.7 0.1230 67.5 0.5650 –32.4
1.400 0.2790 –48.1 3.6300 87.1 0.1400 66.8 0.5450 –34.4
1.600 0.2460 –46.9 3.2460 82.1 0.1540 64.1 0.5190 –35.9
1.800 0.2190 –46.8 2.8850 78.1 0.1780 62.0 0.5210 –37.0
2.000 0.1780 –43.6 2.7470 73.7 0.1940 62.9 0.5000 –38.9
2.200 0.1650 –44.7 2.5810 68.8 0.2010 62.0 0.4780 –43.1
2.400 0.1490 –37.6 2.3820 64.8 0.2240 60.1 0.4550 –43.1
2.600 0.1370 –50.0 2.2440 61.4 0.2410 60.9 0.4710 –43.9
2.800 0.1320 –47.6 2.1380 59.0 0.2530 57.7 0.4490 –47.9
3.000 0.1030 –33.7 2.0440 55.3 0.2650 55.3 0.4380 –47.0
4
[MEMO]
µ
PA805T
5
µ
PA805T
No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.
M4 94.11
6
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