HIT BB502M Datasheet
BB502M
Build in Biasing Circuit MOS FET IC
UHF RF Amplifier
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise; NF = 1.6 dB typ. at f = 900 MHz
• High gain; PG = 22 dB typ. at f = 900 MHz
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4(SOT-143mod)
ADE-208-809B(Z)
3rd. Edition
Jun. 1999
Outline
Notes: 1. Marking is “BS–”.
2. BB502M is individual type number of HITACHI BBFET.
MPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
BB502M
G
G
G1S
G2S
S
G2S
S
G1S
S
G
S
G
G2S
S
G
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate1 to source breakdown
V
(BR)G1SS
voltage
Gate2 to source breakdown
V
(BR)G2SS
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current I
G1SS
G2SS
G1S(off)
G2S(off)
D(op)
Forward transfer admittance |yfs| 202530mSV
Input capacitance c
Output capacitance c
Reverse transfer capacitance c
iss
oss
rss
Power gain PG 17 22 — dB V
Noise figure NF — 1.6 2.2 dB f = 900MHz
6 ——V I
+6——V I
+6——V I
— — +100 nA V
— — +100 nA V
0.5 0.7 1.0 V V
0.5 0.7 1.0 V V
8 1114mAV
1.4 1.7 2.0 pF VDS = 5V, VG1 = 5V
0.7 1.1 1.5 pF V
— 0.02 0.05 pF f = 1MHz
6V
+6
V
–0
+6
V
–0
20 mA
= 200µA
D
V
= V
G1S
= +10µA
1
V
G2S
= +10µA
2
V
G1S
= 0
G2S
= VDS = 0
= VDS = 0
= +5V
V
= VDS = 0
G2S
= +5V
V
= VDS = 0
G1S
= 5V, V
D
I
= 100µA
D
= 5V, V
D
I
= 100µA
D
= 5V, V
D
V
= 4V, RG = 180kΩ
G2S
= 5V, V
D
V
=4V
R
= 180kΩ, f = 1kHz
G
=4V, RG = 180kΩ
G2S
= 5V, V
D
V
=4V, RG = 180kΩ
G2S
= 4V
= 5V
= 5V
1
= 5V
1
= 5V
1
2
Main Characteristics
BB502M
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2 V
Gate 2
Drain
A
I
D
D(op)
Gate 1
Source
R
G
G1
Application Circuit
V = 4 to 0.3 V
AGC
BBFET
V = 5 V
DS
RFC
Output
Input
R
G
V = 5 V
GG
3
BB502M
900MHz Power Gain, Noise Test Circuit
Input (50Ω)
V
R1
L1
C1, C2
C4 to C6
V
G2
G1
C5C4
R2
C3
G2
G1
L2
Variable Capacitor (10pF MAX)
:
Disk Capacitor (1000pF)
:
C3
Air Capacitor (1000pF)
:
180 k
R1
R2
R3
:
:
:
Ω
47 kΩ
4.7 kΩ
V
R3
D
S
D
C6
RFC
Output (50Ω)
L4
L3
C2C1
L1:
L2:
10
26
8
10
3
(φ1mm Copper wire)
3
Unit: mm
21
L3:
L4:
29
7
7
10
18
10
RFC: φ1mm Copper wire with enamel 4turns inside dia 6mm
4
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