HIT BB501C Datasheet

BB501C

Build in Biasing Circuit MOS FET IC

UHF RF Amplifier

Features

• Build in Biasing Circuit; To reduce using parts cost & PC board space.

• High gain;

PG = 21.5 dB typ. at f = 900 MHz

• Low noise;

NF = 1.85 dB typ. at f = 900 MHz

• Withstanding to ESD;

Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.

• Provide mini mold packages; CMPAK-4(SOT-343mod)

ADE-208-701C (Z)

4th. Edition

Nov. 1998

Outline

Notes: 1. Marking is “AS–”.

2. BB501C is individual type number of HITACHI BBFET.

CMPAK-4

2

3

1

4

1. Source

2. Gate1

3. Gate2

4. Drain

BB501C

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V Gate1 to source voltage V

Gate2 to source voltage V

Drain current I

DS

G1S

G2S

D

Channel power dissipation Pch 100 mW Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown

V

(BR)DSS

voltage Gate1 to source breakdown

V

(BR)G1SS

voltage Gate2 to source breakdown

V

(BR)G2SS

voltage Gate1 to source cutoff current I

Gate2 to source cutoff current I

Gate1 to source cutoff voltage V

Gate2 to source cutoff voltage V

Drain current I

G1SS

G2SS

G1S(off)

G2S(off)

D(op)

Forward transfer admittance |yfs| 192429mSV

Input capacitance c Output capacitance c Reverse transfer capacitance c

iss

oss

rss

Power gain PG 17 21.5 — dB VDS = 5V, VG1 = 5V

Noise figure NF — 1.85 2.4 dB f = 900MHz

6 ——V I

+6——V I

— — +100 nA V

0.5 0.7 1.0 V VDS = 5V, V

7 1013mAV

1.4 1.7 2.0 pF VDS = 5V, VG1 = 5V

0.7 1.1 1.5 pF V — 0.019 0.04 pF f = 1MHz

6V +6

V

– 0 +6

V

– 0 20 mA

= 200µA

D

V

= V

G1S

= +10µA

G1

V

G2S

= +10µA

G2

V

G1S

V

G2S

V

G1S

I

= 100µA

D

I

= 100µA

D

DS

V

G2S

DS

V

G2S

R

= 47kΩ, f = 1kHz

G

G2S

V

G2S

= 0

G2S

= VDS = 0

= VDS = 0 = +5V

= VDS = 0

= 4V

G2S

= 5V

G1S

= 5V, VG1 = 5V

= 4V, RG = 47kΩ

= 5V, VG1 = 5V

=4V

=4V, RG = 47kΩ

2

Main Characteristics

BB501C

Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)

V

G2 V

Gate 2

Drain

A

I

D

D(op)

Gate 1

Source

R

G

G1

Application Circuit

V = 4 to 0.3 V

AGC

BBFET

V = 5 V

DS

RFC

Output

Input

R

G

V = 5 V

GG

3

BB501C

900MHzPowerGain,NoiseTestCircuit

Input

R1

L1

C1,C2

C4〜C6

V

G2

G1

C5C4

R2

C3

G2

G1

L2

：

VariableCapacitor（10pFMAX)

：

DiskCapacitor（1000pF)

C3

：

AirCapacitor（1000pF)

：

47kΩ

R1

：

47kΩ

R2

：

4.7kΩ

R3

V

D

C6

R3

D

S

L3

RFC

Output

L4

C2C1

L1：

L2：

10

8

10

3

26

（φ1mmCopperwire）

3

Unit：mm

21

L3：

L4：

29

7

10

18

10

RFC：φ1mmCopperwirewithenamel4turnsinsidedia6mm

4