HIT BB405M Datasheet
BB405M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Superior cross modulation characteristics.
• High gain;
(PG = 28 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
ADE-208-718A (Z)
2nd. Edition
Dec. 1998
Outline
Notes: 1. Marking is “EX–”.
2. BB405M is individual type number of HITACHI BBFET.
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
BB405M
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate1 to source breakdown voltage V
Gate2 to source breakdown voltage V
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Input capacitance c
Output capacitance c
Reverse transfer capacitance c
Drain current I
(BR)DSS
(BR)G1SS
(BR)G2SS
G1SS
G2SS
G1S(off)
G2S(off)
iss
oss
rss
D(op)
I
D(op)
Forward transfer admittance |yfs|1 23 28 — mS VDS = 5V, VG1 = 5V, V
|yfs|2 — 28 — mS VDS = 9V, VG1 = 9V, V
Power gain PG1 24 28 — dB VDS = 5V, VG1 = 5V, V
PG2 — 28 — dB VDS = 9V, VG1 = 9V, V
Noise figure NF1 — 1.4 1.9 dB VDS = 5V, VG1 = 5V, V
NF2 — 1.4 — dB VDS = 9V, VG1 = 9V, V
12——V I
+10 — — V IG1 = +10µA, V
±10——V IG2 = ±10µA, V
— — +100 nA V
——±100 nA V
0.4 0.7 1.0 V VDS = 5V, V
0.4 0.7 1.0 V VDS = 5V, V
2.3 2.8 3.5 pF VDS = 5V, VG1 = 5V
1.1 1.5 1.9 pF V
— 0.017 0.04 pF f = 1MHz
1101520mAVDS = 5V, VG1 = 5V
2 — 13 — mA VDS = 9V, VG1 = 9V
12 V
+10
V
– 0
±10 V
25 mA
= 200µA, V
D
= +9V, V
G1S
= ±9V, V
G2S
=4V, RG = 82kΩ
G2S
V
= 4V, RG = 82kΩ
G2S
V
=6V, RG = 220kΩ
G2S
R
=82kΩ, f = 1kHz
G
R
= 220kΩ, f = 1kHz
G
R
= 82kΩ, f = 200MHz
G
R
= 220kΩ, f = 200MHz
G
R
= 82kΩ, f = 200MHz
G
R
= 220kΩ, f = 200MHz
G
= V
G1S
= VDS = 0
G2S
= VDS = 0
G1S
= VDS = 0
G2S
= VDS = 0
G1S
= 4V, ID = 100µA
G2S
= 5V, ID = 100µA
G1S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
= 0
=4V
=6V
=4V
=6V
=4V
=6V
2
Main Characteristics
BB405M
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
G1 V
V
T
1000p
R
G
Gate 1
Source
Power Gain, Noise Figure Test Circuit
V
G2
1000p
D(op)
Gate 2
G2
Drain
A
I
D
V
T
1000p
Input(50Ω)
1000p
36p
BBFET
L2
82k (VD=5V)
220k (VD=9V)
1000p
1000p
47k
R
G
1000p
47k
L1
1SV70
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
.
1000p
RFC
V = V
D G1
47k
10p max
1SV70
Unit Resistance (Ω)
Capacitance (F)
Output(50Ω)
3
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