BB404M
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• High gain;
(PG = 29 dB typ. at f = 200 MHz)
• Low noise characteristics;
(NF = 1.2 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5V to 9V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
ADE-208-717A (Z)
2nd. Edition
Dec. 1998
Outline
Notes: 1. Marking is “DX–”.
2. BB404M is individual type number of HITACHI BBFET.
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
BB404M
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate1 to source breakdown voltage V
Gate2 to source breakdown voltage V
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Input capacitance c
Output capacitance c
Reverse transfer capacitance c
Drain current I
(BR)DSS
(BR)G1SS
(BR)G2SS
G1SS
G2SS
G1S(off)
G2S(off)
iss
oss
rss
D(op)
I
D(op)
Forward transfer admittance |yfs|1 22 27 34 mS VDS = 5V, VG1 = 5V, V
|yfs|2 — 27 — mS VDS = 9V, VG1 = 9V, V
Power gain PG1 24 29 32 dB VDS = 5V, VG1 = 5V, V
PG2 — 29 — dB VDS = 9V, VG1 = 9V, V
Noise figure NF1 — 1.2 1.9 dB VDS = 5V, VG1 = 5V, V
NF2 — 1.2 — dB VDS = 9V, VG1 = 9V, V
12——V I
+10 — — V IG1 = +10µA, V
±10——V IG2 = ±10µA, V
— — +100 nA V
——±100 nA V
0.4 0.7 1.0 V VDS = 5V, V
0.5 0.7 1.0 V VDS = 5V, V
2.3 2.8 3.6 pF VDS = 5V, VG1 = 5V
0.9 1.3 2.0 pF V
0.003 0.02 0.05 pF f = 1MHz
1 9 15 19 mA VDS = 5V, VG1 = 5V
2 — 13 — mA VDS = 9V, VG1 = 9V
12 V
±10
V
– 0
Å}10 V
25 mA
= 200µA, V
D
= +9V, V
G1S
= ±9V, V
G2S
=4V, RG = 180kΩ
G2S
V
= 4V, RG = 180kΩ
G2S
V
=6V, RG = 470kΩ
G2S
R
= 180kΩ, f = 1kHz
G
R
= 470kΩ, f = 1kHz
G
R
= 180kΩ, f = 200MHz
G
R
= 470kΩ, f = 200MHz
G
R
= 180kΩ, f = 200MHz
G
R
= 470kΩ, f = 200MHz
G
= V
G1S
= VDS = 0
G2S
= VDS = 0
G1S
= VDS = 0
G2S
= VDS = 0
G1S
= 4V, ID = 100µA
G2S
= 5V, ID = 100µA
G1S
G2S
G2S
G2S
G2S
G2S
G2S
G2S
= 0
=4V
=6V
=4V
=6V
=4V
=6V
2
Main Characteristics
BB404M
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
1000p
G1
V
T
R
G
Gate 1
Source
Power Gain, Noise Figure Test Circuit
V
G2
1000p
D(op)
Gate 2
V
G2
Drain
A
I
D
V
T
1000p
Input (50Ω)
1000p
36p
BBFET
L2
180k (VD=5V)
470k (VD=9V)
1000p
47k
R
G
1000p
47k
L1
1SV70
L1 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 :φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC :φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
.
1000p
V = V
1000p
RFC
D G1
47k
10p max
1SV70
Unit Resistance (Ω)
Capacitance (F)
Output (50Ω)
3
BB404M
Maximum Channel Power
Dissipation Curve
200
150
100
50
Channel Power Dissipation Pch (mW)
0
50 100 150 200
Ambient Temperature Ta (°C)
25
Typical Output Characteristics
V = 6 V
G2S
V = V
G1 DS
20
D
15
10
Drain Current I (mA)
5
0
246810
Drain to Source Voltage V (V)
Ω
270 k
330 k
390 k
470 k
560 k
680 k
820 k
1M
R = 1.5 M
G
DS
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Drain Current vs.
Gate2 to Source Voltage
25
V = V = 9 V
DS
G1
20
D
15
10
Drain Current I (mA)
5
0
1.2 2.4 3.8 4.8 6.0
Gate2 to Source Voltage V (V)
270 k
330 k
390 k
470 k
560 k
680 k
820 k
1M
R = 1.5 M
G
G2S
Drain Current vs. Gate1 Voltage
25
V = 9 V
Ω
DS
R = 390 k
G
Ω
20
Ω
D
Ω
15
6 V
5 V
4 V
Ω
Ω
10
Ω
Ω
Ω
Ω
5
Drain Current I (mA)
0
246810
Gate1 Voltage V (V)
V = 1 V
G1
3 V
2 V
G2S
4