HIT BB305C Datasheet
BB305C
Build in Biasing Circuit MOS FET IC
UHF/VHF RF Amplifier
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Superior cross modulation characteristics.
• High gain; (PG = 28 dB typ. at f = 200 MHz)
• Wide supply voltage range;
Applicable with 5 V to 9 V supply voltage.
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 200V at C = 200 pF, Rs = 0 conditions.
• Provide mini mold packages; CMPAK-4 (SOT-343mod)
ADE-208-608C (Z)
4th. Edition
May 1998
Outline
Note: 1. Marking is “EW–”.
2. BB305C is individual type number of HITACHI BBFET.
CMPAK-4
2
3
1
4
1. Source
2. Gate1
3. Gate2
4. Drain
BB305C
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 100 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
12 V
+10
V
–0
+10 V
25 mA
2
Electrical Characteristics (Ta = 25°C)
S
G
G2S
S
G
G2S
S
G
G2S
S
G
G2S
S
G
G2S
S
G
G2S
S
G
G2S
S
G
G2S
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown
V
(BR)DSS
voltage
Gate1 to source breakdown
V
(BR)G1SS
voltage
Gate2 to source breakdown
V
(BR)G2SS
voltage
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Drain current I
I
G1SS
G2SS
D(op)
D(op)
G1S(off)
G2S(off)
iss
oss
rss
Forward transfer admittance |yfs|1 23 28 — mS V
|yfs|2 — 28 — mS V
Power gain PG1 24 28 — dB V
PG2 — 28 — dB V
Noise figure NF1 — 1.3 1.8 dB V
NF2 — 1.3 — dB V
12——VID = 200µA, V
+10——VIG1 = +10µA, V
±10——VIG2 = ±10µA, V
— — +100 nA V
——±100 nA V
= +9V, V
G1S
= ±9V, V
G2S
0.4 — 1.0 V VDS = 5V, V
0.4 — 1.0 V VDS = 5V, V
2.3 2.8 3.5 pF VDS = 5V, VG1 = 5V
1.1 1.5 1.9 pF V
=4V, RG = 82kΩ
G2S
— 0.017 0.04 pF f = 1MHz
1101520mAV
2 — 13 — mA V
= 5V, V
D
R
= 82kΩ
G
= 9V, V
D
R
= 220kΩ
G
= 5V, V
D
R
=82kΩ, f = 1kHz
G
= 9V, V
D
R
= 220kΩ, f = 1kHz
G
= 5V, V
D
R
= 82kΩ, f = 200MHz
G
= 9V, V
D
R
= 220kΩ, f = 200MHz
G
= 5V, V
D
R
= 82kΩ, f = 200MHz
G
= 9V, V
D
R
= 220kΩ, f = 200MHz
G
G1S
G2S
G1S
G2S
G1S
= 4V, ID = 100µA
G2S
= 5V, ID = 100µA
G1S
= 5V, V
1
= 9V, V
1
= 5V, V
1
= 9V, V
1
= 5V, V
1
= 9V, V
1
= 5V, V
1
= 9V, V
1
= V
= 0
G2S
= VDS = 0
= VDS = 0
= VDS = 0
= VDS = 0
BB305C
= 4V,
=6V,
=4V
=6V,
=4V,
=6V,
=4V,
=6V,
3
BB305C
Main Characteristics
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
G2
Gate 2
Drain
A
I
D
Power Gain, Noise Figure Test Circuit
V
G2
1000p
1000p
V
T
D(op)
Gate 1
Source
R
G
V
G1
V
T
1000p
Input(50Ω)
4
1000p
36p
1000p
47k
L1
1SV70
L1 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2 : φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC : φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
47k
1000p
R
BBFET
L2
82k
G
1000p
1000p
RFC
V = V
D G1
47k
10p max
1SV70
Unit Resistance (Ω)
Capacitance (F)
Output(50Ω)
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