HIT 2SK3151 Datasheet
2SK3151
Silicon N Channel MOS FET
High Speed Power Switching
Features
• Low on-resistance
R
= 11.5 mΩ typ.
DS (on)
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
ADE-208-747A (Z)
2nd. Edition
February 1999
TO–3P
1
G
D
2
1. Gate
1
2
3
S
3
2. Drain
(Flange)
3. Source
2SK3151
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate to source voltage V
Drain current I
Drain peak current I
Body-drain diode reverse drain current I
Avalanche current I
Avalanche energy E
Channel dissipation Pch
DSS
GSS
D
D(pulse)
DR
Note3
AP
Note3
AR
Note1
Note2
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%
2. Value at Tc = 25°C
3. Value at Tch = 25°C, Rg ≥ 50 Ω
Electrical Characteristics (Ta = 25°C)
100 V
±20 V
50 A
200 A
50 A
50 A
250 mJ
125 W
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate to source breakdown voltage V
Gate to source leak current I
Zero gate voltege drain current I
Gate to source cutoff voltage V
Static drain to source on state R
resistance R
(BR)DSS
(BR)GSS
GSS
DSS
GS(off)
DS(on)
DS(on)
100 — — V ID = 10 mA, VGS = 0
±20——V I
= ±100 µA, VDS = 0
G
——±10 µAVGS = ±16 V, VDS = 0
——10µAVDS = 100 V, VGS = 0
1.0 — 2.5 V ID = 1 mA, VDS = 10 V
— 11.5 15 mΩ ID = 25 A, VGS = 10 V
—1625mΩ ID = 25 A, VGS = 4 V
Forward transfer admittance |yfs|3050—S ID = 25 A, VDS = 10 V
Input capacitance Ciss — 4000 — pF VDS = 10 V
Output capacitance Coss — 1650 — pF VGS = 0
Reverse transfer capacitance Crss — 590 — pF f = 1 MHz
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Body–drain diode forward voltage V
Body–drain diode reverse
recovery time
t
d(on)
r
d(off)
f
DF
rr
— 30 — ns ID = 25 A, VGS = 10 V
— 280 — ns RL = 1.2 Ω
— 830 — ns
— 450 — ns
— 0.95 — V IF = 50 A, VGS = 0
— 100 — ns IF = 50 A, VGS = 0
diF/ dt = 50 A/ µs
Note: 4. Pulse test
Note4
Note4
Note4
2
Main Characteristics
2SK3151
160
Power vs. Temperature Derating
120
80
40
Channel Dissipation Pch (W)
0
50 100 150 200
Case Temperature Tc (°C)
Typical Output Characteristics
50
40
D
30
V = 10 V
GS
4 V
3.5 V
Pulse Test
3 V
1000
300
D
300
100
100
30
10
Drain Current I (A)
3
1
12 5
100
80
D
60
Maximum Safe Operation Area
10 µs
100 µs
1 ms
PW = 10 ms (1 shot)
DC Operation (Tc = 25°C)
Operation in
this area is
limited by R
DS(on)
Ta = 25°C
50 100
20
10
Drain to Source Voltage V (V)
DS
Typical Transfer Characteristics
V = 10 V
DS
Pulse Test
200
20
Drain Current I (A)
10
0
246810
Drain to Source Voltage V (V)
2.5 V
2 V
DS
40
Drain Current I (A)
20
0
75°C
12345
Gate to Source Voltage V (V)
Tc = –25°C
25°C
GS
3
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