HIT 2SK3150-S, 2SK3150-L Datasheet

2SK3150(L), 2SK3150(S)

Silicon N Channel MOS FET
High Speed Power Switching

ADE-208-750A (Z)

2nd. Edition

February 1999

Features

• Low on-resistance

RDS = 45 mΩ typ.

• High speed switching

• 4 V gate drive device can be driven from 5 V source

Outline

1. Gate

2. Drain

3. Source

4. Drain

1

2

3

4

1

2

3

4

LDPAK

G

D

S

2SK3150(L),2SK3150(S)

2

Absolute Maximum Ratings (Ta = 25°C)

Item Symbol Ratings Unit

Drain to source voltage V

DSS

100 V

Gate to source voltage V

GSS

±20 V

Drain current I

D

20 A

Drain peak current I

D(pulse)

Note1

60 A

Body-drain diode reverse drain current I

DR

20 A

Avalanche current I

AP

Note3

20 A

Avalanche energy E

AR

Note3

40 mJ

Channel dissipation Pch

Note2

50 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C

Note: 1. PW ≤ 10 µs, duty cycle ≤ 1%

2. Value at Tc = 25°C

3. Value at Tch = 25°C, Rg ≥ 50 Ω

Electrical Characteristics (Ta = 25°C)

Item Symbol Min Typ Max Unit Test Conditions

Drain to source breakdown voltage V

(BR)DSS

100 — — V ID = 10 mA, VGS = 0

Gate to source breakdown voltage V

(BR)GSS

±20——V I

G

= ±100 µA, VDS = 0

Gate to source leak current I

GSS

——±10 µAVGS = ±16 V, VDS = 0

Zero gate voltege drain current I

DSS

——10µAVDS = 100 V, VGS = 0

Gate to source cutoff voltage V

GS(off)

1.0 — 2.5 V ID = 1 mA, VDS = 10 V

Static drain to source on state R

DS(on)

—4560mΩ ID = 10 A, VGS = 10 V

Note4

resistance R

DS(on)

—6585mΩ ID = 10 A, VGS = 4 V

Note4

Forward transfer admittance |yfs| 8.5 15 — S ID = 10 A, VDS = 10 V

Note4

Input capacitance Ciss — 900 — pF VDS = 10 V
Output capacitance Coss — 400 — pF VGS = 0
Reverse transfer capacitance Crss — 210 — pF f = 1 MHz
Turn-on delay time t

d(on)

— 15 — ns ID = 10 A, VGS = 10 V

Rise time t

r

— 120 — ns RL = 3 Ω

Turn-off delay time t

d(off)

— 200 — ns

Fall time t

f

— 150 — ns

Body–drain diode forward voltage V

DF

— 0.9 — V IF = 20 A, VGS = 0

Body–drain diode reverse
recovery time

t

rr

— 90 — ns IF = 20 A, VGS = 0

diF/ dt = 50A/ µs

Note: 4. Pulse test

2SK3150(L),2SK3150(S)

3

Main Characteristics

80

60

40

20

0

50 100 150 200

100

3

10

1

0.1

0.05
1 2 10 20 100

20

16

12

8

4

0

12345

0

246810

Ta = 25 °C

Tc = 75°C

25°C

–25°C

Channel Dissipation Pch (W)

Case Temperature Tc (°C)

Power vs. Temperature Derating

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Maximum Safe Operation Area

Drain to Source Voltage V (V)

DS

Drain Current I (A)

D

Typical Output Characteristics

Gate to Source Voltage V (V)

GS

Drain Current I (A)

D

Typical Transfer Characteristics

Operation in
this area is
limited by R

DS(on)

V = 10 V
Pulse Test

DS

100 µs

1 ms

PW =10 ms (1shot)

DC Operation (Tc = 25°C)

10 µs

20

16

12

8

4

3.5 V

3 V

V =2.5 V

GS

10 V

Pulse Test

6 V

4 V

0.3

500

30

550

200

0.5

500