Zetex (Now Diodes) FMMT549, FMMT549A Schematic [ru]
SOT23 PNP SILICON PLANAR
MEDIUM POWER TRANSISTORS
FMMT549
FMMT549A
ISSUE 3 - OCTOBER 1995 ✪
FEATURES
* Low equivalent on-resistance; R
* 1 Amp continuous current
COMPLEMENTARY TYPES FMMT549 - FMMT449
250mΩ at 1A
CE(sat)
C
FMMT549A - N/A
PARTMARKING DETAIL FMMT549 - 549
FMMT549A - 59A
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current I
Continuous Collector Current I
Base Current I
Power Dissipation: at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
CBO
CEO
EBO
CM
C
B
tot
j:Tstg
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Breakdown Voltages V
Cut-Off Currents I
Saturation Voltages V
FMMT549A -0.30 V
Base Emitter Turn-on Voltage V
Static Forward Current
Transfer Ratio
FMMT549 100 160 300 I
FMMT549A 150 200 500 I
Transition Frequency f
Output Capacitance C
Switching Times t
(BR)CBO
V
(BR)CEO
V
(BR)EBO
CBO
I
EBO
CE(sat)
V
BE(sat)
BE(on)
h
FE
T
obo
on
t
off
*Measured under pulsed conditions. Pulse width=300
-35 V
-30 V IC=-10mA*
-5 V
-0.1
-10
-0.1
-0.25
-0.50
-0.50
-0.75VV
-0.9 -1.25 V IC=-1A, IB=-100mA*
-0.85 -1 V IC=-1A, VCE=-2V*
200
70
130
80
80
40
100 MHz IC=-100mA, VCE=-5V
25 pF VCB=-10V, f=1MHz
50 ns IC=-500mA, VCC=-10V
300 ns
µs. Duty cycle ≤ 2%
3 - 127
-35 V
-30 V
-5 V
-2 A
-1 A
-200 mA
500 mW
-55 to +150 °C
=-100µA
I
C
=-100µA
I
E
V
µA
µA
µA
CB
V
CB
V
EB
=-30V
=-30V, T
=-4V
IC=-1A, IB=-100mA*
=-2A, IB=-200mA*
I
C
=-100mA, IB=-1mA*
I
C
I
=-50mA, VCE=-2V*
C
I
=-1A, VCE=-2V*
C
=-2A, VCE=-2V*
I
C
=-500mA, VCE=-2V*
C
=-500mA, VCE=-2V*
C
f=100MHz
=-50mA
I
B1=IB2
amb
=100°C
E
B
FMMT549
FMMT549A
TYPICAL CHARACTERISTICS
td,tr,tf
(ns)
e
tim
g
n
tchi
i
Sw
s)
t
ol
- (V
V
180
160
140
120
100
80
60
40
20
0
0.01
tr
ts
td
0.1 1
Collector Current (Amps)
IC-
Switching Speeds
1.4
1.2
1.0
0.8
0.6
0.01
Collector Current (Amps)
IC-
IC/IB=100
0.1 1
BE(sat)
0.8
0.6
s)
t
ol
V
(
0.4
-
0.2
V
n
i
a
- G
h
0
200
160
120
80
40
0.001
0.01
Collector Current (Amps)
IC-
VCE=2V
0.01
Collector Current (Amps)
IC-
CE(sat)
V
IC/IB=100
0.1
v IC
0.1 1
IC/IB=10
1
10
10
hFEv IC V
IB1=IB2=IC/10
tf
IC/IB=10
v IC
ts
(ns)
1800
1600
1400
1200
1000
800
600
400
200
10
0
s)
t
ol
(V
-
V
10
1.0
0.9
0.8
0.7
0.6
0.001
IC/IB=10
0.01
Collector Current (Amps)
IC-
BE(on)
V
0.1 1
C
v I
0.1
10
0.01
SinglePulse Test at T
1
DC
1s
100ms
10ms
1ms
100
µ
s
0.1
1
VCE- Collector Emitter Voltage (V)
Safe Operating Area
amb
=25°C
10 100
3 - 128
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