ST STTH3BCF060 User Manual
STTH3BCF060
600 V high voltage rectifier for BC2 topology
Features
■ optimized freewheel diode for BC
(ST patent)
■ low conduction losses
■ high voltage rectifier
■ improves efficiency by up to 2.5% compared to
conventional continuous mode PFC using
standard ultrafast 600 V PN diodes
■ performance efficiency improved by up to 0.5%
compared to 600 V Schottky power diodes with
no reverse recovery charges used in CCM PFC
at 200 kHz
■ provides a cost/performance optimized
solution to meet the 80+ efficiency
requirements
■ supports PFC working up to 300 kHz
■ suitable for PFC up to 400 W
■ compatible with standard PFC controller ICs
2
topology
Description
KA
SMB
STTH3BCF060U
Table 1. Device summary
Symbol Value
I
F(AV)
V
RRM
I
(max) 100 µA
R
T
j
3 A
600 V
175 °C
The STTH3BCF060 is a specific freewheel diode
used in continuous mode power factor correction
working in the BC
especially designed for the dedicated BC
2
topology. This diode has been
2
topology. Therefore, its electrical characteristics
offer the best possible efficiency with a P-N
optimized structured diode. As a result, SMPS
efficiency growth up to 2.5% can be produced at
an optimized cost.
October 2010 Doc ID 17524 Rev 2 1/8
www.st.com
8
Characteristics STTH3BCF060
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
V
I
F(RMS)
I
F(AV)
I
T
Table 3. Thermal resistance
Repetitive peak reverse voltage 600 V
RRM
Forward rms current 10 A
Average forward current δ = 0.5 TL = 55 °C 3 A
Surge non repetitive forward current tp = 10 ms sinusoidal 45 A
FSM
Storage temperature range - 65 to + 175 °C
stg
Maximum operating junction temperature 175 °C
T
j
Symbol Parameter Maximum Unit
R
Table 4. Static electrical characteristics
Junction to lead 25 °C/W
th(j-l)
Symbol Parameter Test conditions Min. Typ. Max. Unit
Reverse leakage
I
R
current
V
Forward voltage drop
F
= 25 °C
T
j
= 150 °C 15 100
T
j
= V
V
R
RRM
Tj = 25 °C
IF = 3 A
= 150 °C 1.0 1.25
T
j
3
1.7
To evaluate the maximum conduction losses use the following equation:
P = 1.03 x I
Table 5. Dynamic electrical characteristics
F(AV)
+ 0.09 I
F2(RMS)
µA
V
Symbol Parameter Test conditions Min. Typ. Max. Unit
Reverse
t
rr
recovery time
Forward
t
fr
recovery time
V
Forward
FP
recovery voltage
T
= 25 °C
j
= 25 °C
T
j
= 1 A, VR = 30 V
I
F
/dt = -50 A/µs
dI
F
I
= 3 A,
F
/dt = 100 A/µs
dI
F
VFR = 1.1 x V
2/8 Doc ID 17524 Rev 2
Fmax
35 ns
100 ns
10 V
STTH3BCF060 Characteristics
0.00.5
0
5
0
53.03.5
0
Figure 1. Conduction losses versus average
current
P(W)
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
δ = 1
T
=tp/T
Figure 3. Relative variation of thermal
impedance junction ambient versus
Figure 2. Forward voltage drop versus
forward current
I (A)
FM
50
45
40
35
30
25
20
15
10
tp
5
0
(typical values)
1.
T =150°C
j
1.
T =150°C
j
(maximum values)
V (V)
FM
2.
2.
Figure 4. Peak reverse recovery current
versus dI
/dt (typical values)
F
T =25°C
j
(maximum values)
4.
pulse duration
Z/R
th(j-a) th(j-a)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
Single pulse
SMB
S = 1cm
Cu
2
t (s)
p
Figure 5. Reverse recovery time versus dI
(typical values)
t (ns)
rr
160
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
0 50 100 150 200 250 300 350 400 450 500
I =2 x I
F F(AV)
dI /dt(A/µs)
F
I=I
F F(AV)
V =400V
R
T =125°C
j
I =0.5 x I
F F(AV)
F
/dt
I (A)
RM
13
V =400V
R
12
T =125°C
j
11
10
9
8
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
I =0.25 x I
F F(AV)
I =0.5 x I
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
I =2 x I
F F(AV)
Figure 6. Reverse recovery charges versus
dI
/dt (typical values)
F
Q (nC)
rr
450
V =400V
R
T =125°C
j
400
I =2 x I
350
300
250
200
150
100
50
0
0 50 100 150 200 250 300 350 400 450 500
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
dI /dt(A/µs)
F
Doc ID 17524 Rev 2 3/8
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