Datasheet STTH802-Y Datasheet (ST)

STTH802-Y

Automotive ultrafast recovery diode

Features

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery time

■ High junction temperature

■ AEC-Q101 qualified

Description

The STTH802-Y uses ST's new 200 V planar Pt
doping technology, and is specially suited for
switching mode base drive and transistor circuits.

Packaged in DPAK, this device is intended for use
in low voltage, high frequency inverters, free
wheeling and polarity protection for automotive
application.

K

NC

DPAK

STTH802BY-TR

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

j (max)

(typ) 0.8 V

V

F

(typ) 17 ns

t

rr

KA

A

8 A

200 V

175 °C

March 2011 Doc ID 018563 Rev 1 1/7

www.st.com

7

Characteristics STTH802-Y

1 Characteristics

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 200 V

RRM

Forward rms current 16 A

T

Average forward current, δ = 0.5

Surge non repetitive forward current

FSM

Storage temperature range -65 to + 175 °C

stg

T

Maximum operating junction temperature range -40 to + 175 °C

j

= 145 °C

c

= 10 ms Sinusoidal

t

p

8A

100 A

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

Junction to case 3.2 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

Reverse leakage current

R

(2)

Forward voltage drop

F

= 380 µs, δ < 2 %

p

= 25 °C

j

= 125 °C 6 60

T

j

Tj = 25 °C

= V

V

R

RRM

0.95 1.05

IF = 8 A

= 150 °C 0.8 0.90

T

j

6

µA

V

To evaluate the conduction losses use the following equation: P = 0.73 x I

2/7 Doc ID 018563 Rev 1

F(AV)

+ 0.021 I

F2(RMS)

STTH802-Y Characteristics

Table 5. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

= 30 V, Tj = 25 °C

V

R

= 1 A, dIF/dt = -100 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

I

= 8 A, dIF/dt = -200 A/µs,

F

VR = 160 V, Tj = 125 °C

= 8 A, dIF/dt = 50 A/µs

I

F

= 1.1 x V

V

FR

= 8 A, dIF/dt = 50 A/µs,

I

F

= 25 °C

T

j

, Tj = 25 °C

Fmax

Min. Typ. Max. Unit

25 30 ns

17 22

5.5 7 A

150 ns

1.5 V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

100

80

60

40

20

0

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

T

T

I

I

M

M

=tp/T

=tp/T

d

δ

tp

tp

δ

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=150°C

Tj=25°C

VFM(V)

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

200

180

160

140

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Tj=150°C

Tj=25°C

VFM(V)

Doc ID 018563 Rev 1 3/7

Figure 4. Relative variation of thermal

impedance, junction to case,
versus pulse duration

Z

th(j-c)/Rth(j-c)

1.0

Single pulse

0.1

1.E-03 1.E-02 1.E-01 1.E+00

tp(s)

Characteristics STTH802-Y

Figure 5. Junction capacitanceversus

reverse applied voltage
(typical values)

C(pF)

100

10

1 10 100 1000

V

F=1MHz

=30mV

osc

Tj=25°C

RMS

VR(V)

Figure 7. Reverse recovery time versus dI

(typical values)

tRR(ns)

80

70

60

50

40

30

20

10

0

10 100 1000

Tj=125°C

Tj=25°C

IF=8A

V

=160V

R

dIF/dt(A/µs)

Figure 6. Reverse recovery charges versus

dI

/dt (typical values)

F

QRR(nC)

160

IF=8A

=160V

V

140

R

120

100

80

60

40

20

0

10 100 1000

/dt

Figure 8. Peak reverse recovery current

F

versus dI

IRM(A)

12

IF=8A

V

=160V

R

10

8

6

4

2

0

10 100 1000

Tj=125°C

Tj=25°C

/dt (typical values)

F

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

dIF/dt(A/µs)

Figure 9. Dynamic parameters versus

junction temperature

QRR;IRM[Tj]/QRR;IRM[Tj=125°C]

1.4

IF=8A

V

=160V

R

1.2

1.0

I

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125 150

RM

Q

RR

Tj(°C)

Figure 10. Thermal resistance, junction to

ambient, versus copper surface
under tab

Rth (°CW)

(j-a)

100

90

80

70

60

50

40

30

20

10

0

0 2 4 6 8 101214161820

epoxy printed board copper thickness = 35 µm

S(cm²)

4/7 Doc ID 018563 Rev 1

STTH802-Y Package information

2 Package information

● Epoxy meets UL94, V0

● Lead-free package

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 6. DPAK dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

Ref.

Millimeters Inches

Min. Max. Min. Max.

A 2.20 2.40 0.086 0.094

E

B2

L2

H

L4

B

G

A1

A

C2

R

D

R

C

A1 0.90 1.10 0.035 0.043

A2 0.03 0.23 0.001 0.009

B 0.64 0.90 0.025 0.035

B2 5.20 5.40 0.204 0.212

C 0.45 0.60 0.017 0.023

C2 0.48 0.60 0.018 0.023

D 6.00 6.20 0.236 0.244

E 6.40 6.60 0.251 0.259

0.60 MIN.

A2

G 4.40 4.60 0.173 0.181

H 9.35 10.10 0.368 0.397

V2

L2 0.80 typ. 0.031 typ.

Figure 11. Footprint (dimensions in mm)

6.7 3 3

6.7

Doc ID 018563 Rev 1 5/7

L4 0.60 1.00 0.023 0.039

V2 0° 8° 0° 8°

1.6

2.3

2.3

1.6

Ordering information STTH802-Y

3 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STTH802BY-TR STTH802Y DPAK 0.3 g 2500 Tape and reel

4 Revision history

Table 8. Document revision history

Date Revision Changes

10-Mar-2011 1 First issue.

6/7 Doc ID 018563 Rev 1

STTH802-Y

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Doc ID 018563 Rev 1 7/7