ST STTH3002C User Manual

Features

STTH3002C

High efficiency ultrafast diode

■ Suited for SMPS

■ Low losses

■ Low forward and reverse recovery times

■ High surge current capability

■ High junction temperature

■ Insulated version TOP3I:

– Insulated voltage: 2500 V

rms

– Capacitance 12 pF

Description

Dual center tab rectifier suited for switch mode
power supplies and high frequency DC to DC
converters.

Packaged in TO-220AB, TO-247, I
and TOP3I, this device is intended for use in low
voltage, high frequency inverters, free wheeling
and polarity protection

2

PA K , D2PA K ,

K

A1

TO-220AB

STTH3002CT

K

A1

D2PA K

STTH3002CG

A1

A2

A2

STTH3002CW

A2

A1

TO-247

K

A2

K

NC

A1

STTH3002CPI

A2

K

A1

I2PA K

STTH3002CR

A2

K

TOP3I

Table 1. Device summary

I

F(AV)

V

RRM

T

(max) 175 °C

j

VF (typ) 0.75 V

t

(typ) 17 ns

rr

August 2008 Rev 4 1/11

2 x 15A

200 V

www.st.com

Characteristics STTH3002C

1 Characteristics

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 200 V

RMS forward current 50 A

TO-220AB, TO-247,

2

PAK, D2PA K

I

Per diode T

Per device Tc = 145 °C

= 150 °C

c

Average forward current, δ = 0.5

Per diode T

TOP3I

Per device T

= 125 °C

c

= 105 °C

c

Surge non repetitive forward current tp = 10 ms Sinusoidal 180 A

Storage temperature range -65 to +175 °C

stg

T

Maximum operating junction temperature 175 °C

j

15

30

15

30

Symbol Parameter Value Unit

Per diode 1.5

TO-220AB, TO-247, I2PA K , D2PA K

Total 1.0

R

th(j-c)

Junction to case

TOP3I

Per diode 3.5

°C/W

Total 2.3

R

th(c)

Coupling

TOP3I 1.1

TO-220AB, TO-247, I

2

PA K , D2PA K 0 .5

A

When the two diodes 1 and 2 are used simultaneously:

ΔTj(diode 1) = P (diode 1) X R

2/11

(Per diode) + P (diode 2) x R

th(j-c)

th(c)

STTH3002C Characteristics

Table 4. Static electrical characteristics

Symbol Parameter Test conditions Min. Typ Max. Unit

(1)

I

R

V

Reverse leakage current

(2)

Forward voltage drop

F

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: t

= 380 µs, δ < 2 %

p

= 25 °C

T

j

Tj = 125 °C 10 125

= 25 °C

T

j

V

= V

R

RRM

I

= 15 A 1.05

F

I

= 30 A 1.18

F

IF = 15 A 0.75 0.84

Tj = 150 °C

I

= 30 A

F

20

0.99

To evaluate the conduction losses use the following equation:
P = 0.69 x I

Table 5. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Figure 1. Peak current versus duty cycle

(per diode)

F(AV)

+ 0.01 I

F2(RMS)

Test conditions

= 1 A, dIF/dt = 200 A/µs,

I

F

= 30 V, Tj = 25 °C

V

R

IF = 15 A, dIF/dt = 200 A/µs,
V

= 160 V, Tj = 125 °C

R

= 15 A, dIF/dt = 200 A/µs

I

F

= 1.1 x V

V

FR

Fmax

IF = 15 A, dIF/dt = 200 A/µs,
T

= 25 °C

j

Figure 2. Forward voltage drop versus

, Tj = 25 °C

forward current (typical values, per

Min. Typ Max. Unit

17 22 ns

67.8 A

110 ns

2.5 V

diode)

I(A)

M

120

100

80

60

40

20

0

P = 10W

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 30W

P = 15W

δ

I

δ

M

T

=tp/T

tp

I(A)

FM

100

90

80

70

60

50

40

30

20

10

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

T =150°C

j

V(V)

FM

T =25°C

j

µA

V

3/11

Characteristics STTH3002C

Figure 3. Forward voltage drop versus

forward current (maximum values,
per diode)

I(A)

FM

100

90

80

70

60

50

40

30

20

10

0

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

T =150°C

j

V(V)

FM

T =25°C

j

Figure 5. Junction capacitance versus

reverse applied voltage (typical
values, per diode)

C(pF)

1000

100

V (V)

10

0 50 100 150 200

R

F=1MHz

V =30mV

OSC RMS

T =25°C

j

Figure 7. Reverse recovery time versus

dI

/dt (typical values, per diode)

F

t (ns)

rr

70

I =15A

F

V =160V

R

60

50

40

30

20

10

0

10 100 1000

T =125°C

j

dI /dt(A/µs)

F

T =25°C

j

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

Single pulse

t(s)

0.1

1.E-03 1.E-02 1.E-01 1.E+00

p

Figure 6. Reverse recovery charges versus

dI

/dt (typical values, per diode)

F

Q (nC)

rr

250

I =15A

F

225

V =160V

R

200

175

150

125

100

75

50

25

0

10 100 1000

T =125°C

j

dI /dt(A/µs)

F

T =25°C

j

Figure 8. Peak reverse recovery current

versus dIF/dt (typical values, per
diode)

I (A)

RM

14

I =15A

F

13

V =160V

R

12

11

10

9

8

7

6

5

4

3

2

1

0

10 100 1000

T =125°C

j

dI /dt(A/µs)

F

T =25°C

j

4/11