Siemens 6N136, 6N135 Datasheet

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6N135
6N136

FEATURES

• Isolation Test Voltage: 2500 VAC

RMS

• TTL Compatible

• High Bit Rates: 1 Mbit/s

• High Common-Mode Interference Immunity

• Bandwidth 2 MHz

• Open-Collector Output

• External Base Wiring Possible

Dimensions in inches (mm)

34

• Field-Effect Stable by TRIOS*

• Underwriters Lab File #E52744

268 (6.81)
255 (6.48)

DESCRIPTION

The 6N135 and 6N136 are optocouplers with a
GaAIAs infrared emitting diode, optically coupled
with an integrated photodetector which consists of
a photodiode and a high-speed transistor in

a DIP-

8 plastic package.
Signals can be transmitted between two electri-

65

.390 (9.91)
.379 (9.63)

.045 (1.14)
.030 (.76)

cally separated circuits up to frequencies of 2
MHz. The potential difference between the circuits
to be coupled is not allowed to exceed the maxi­mum permissible reference voltages.

Maximum Ratings

4°

Typ.

.022 (.56)
.018 (.46)

Emitter

Reverse Voltage.................................................5 V

Forward Current............................................25 mA

Peak Forward Current

(t =1 ms, duty cycle 50%)............................50 mA

Maximum Surge Forward Current
(t

≤

1 µs, 300 pulses/s).......................................1 A

Thermal Resistance................................... 700 K/W

Total Power Dissipation (T

70°C)...............45 mW

≤

A

Detector

Supply Voltage.....................................–0.5 to 15 V

Output Voltage.................................... –0.5 to 15 V

Emitter-Base Voltage......................................... 5 V

Output Current.................................................8 mA

Maximum Output Current..............................16 mA

Base Current.................................................. 5 mA

Thermal Resistance................................... 300 K/W

Total Power Dissipation (T

≤

70°C).............100 mW

A

Package

Isolation Test V oltage (between emitter and

detector climate per DIN 40046,

part 2, Nov. 74 (t=1min.) ...............2500 VAC

Pollution Degree (DIN VDE 0109).........................2

Creepage
Clearance
Comparative Tracking Index per

...........................................................≥

...........................................................≥

7 mm
7 mm

DIN IEC112/VDE 0303 part 1,

Group IIIa per DIN VDE 6110........................175

Isolation Resistance
V

=500 V, TA = 25°C...............................≥1012

IO

VIO=500 V, TA = 100°C.............................≥1011

Storage Temperature Range....... –55°C to +125°C

Ambient Temperature Range...... –55

Soldering Temperature (max.

dip soldering

≥

0.5 mm from

≤

°

10 sec.,

C to +100°C

case bottom)..............................................260

*TRIOS

—TRansparent IOn Shield

Characteristics

RMS

Ω
Ω

°

C

Emitter Symbol Unit Condition

Forward Voltage V
Breakdown Voltage V
Reverse Current I
Capacitance C
Temperature Coeffi-

cient, Forward Voltage

Detector

Supply Current
Logic Low I

Supply Current
Logic High I

Output Voltage,
Output Low
6N135
6N136

Output Current,
Output High I

Output Current,
Output High I

Current Gain H

Package

Coupling Capacitance
Input-Output C

Current Transfer Ratio

6N135
6N136

6N135
6N136

5–1

=0 to 70°C unless otherwise specified, TA=25°C typ.)

(T

A

HIGH-SPEED 2.5 kV TRIOS

OPTOCOUPLER

12

87

.100 (2.54)

Typ.

F
BR

R

O

VF /∆TA-1.7 mV/°CIF=16 mA

∆

CCL

CCH

V

OL

V

OL

CH

CH

FE

IO

CTR
CTR

CTR
CTR

Pin
One

.150 (3.81)
.130 (3.30)

.040 (1.02)
.030 (.76 )

I.D.

NC

Anode

Cathode

NC

1

2

3

4

.305 typ.

(7.75) typ.

10°
Typ.

3°–9°

.012 (.30)
.008 (.20)

1.6 (≤1.9) V IF=16 mA

≥

5VI

R

0.5 (≤10)µAV
125 pF VR=0 V, f=1 MHz

IF=16 mA, VO open,

150

µ

A

VCC=15 V
IF=0 mA, VO open,

0.01 (≤1)µA

VCC=15 V
IF=16 mA,

VCC=4.5 V

0.1 (≤0.4)

0.1 (≤0.4)VV

IO=1.1 mA
IO=2.4 mA

3 (≤500) nA IF=0 mA,

VO=VCC=5.5 V
IF=0 mA

0.01 (≤1)µA

VO=VCC=15 V

150 VO=5 V, IO=3 mA

0.6 pF f=1 MHz

16 (≥7)
35 (≥19)%%

≥

5

≥

15

%I

IF=16 mA, VO=0.4 V,
VCC=4.5 V, TA=25°C

F

VCC=4.5 V

Cathode

8

(VCC)
Base

7

(V

)

B

Collector

6

(V

)

O

Emitter

5

(GND)

.135 (3.43
.115 (2.92

=10 µA

=5 V

R

=16 mA, VO=0.5 V,



This document was created with FrameMaker 4.0.4

Figure 1. Switching times

F

V

V

I

F

V

O

5 V

Delay Time

(IF=16 mA, VCC=5 V, TA=25°C)

High - Low
6N135 (RL=4.1 kΩ)
6N136 (RL=1.9 kΩ)

t

Low - High
6N135 (RL=4.1 kΩ)
6N136 (RL=1.9 kΩ)

t
t

t
t

PHL
PHL

PLH
PLH

0.3 (≤1.5)

0.2 (≤0.8)

0.3 (≤1.5)

0.2 (≤0.8)

µs
µs

µs
µs

V

OL

t

PHL

1.5 V
t

t

PLH

Pulse generator

=50 Ω

Z

O

tf=5 ns

t

,

r

duty cycle 10%
t≤100 µs

R

L

C
15 p

5 V

V

L

O

IF Monitor

I

F

100 Ω

1

2

3

4

8

7

6

5

Figure 2. Common-mode interference immunity

V

CM

10 V

90%

10% 90%

0 V

t

V

O

5 V

V

O

V

OL

B

FF

r

I

1

F

2

A

3

4

t

10%

f

B: I

A: I

8

7

6

5

=0 mA

F

=16 mA

F

t

t

t

5

R

L

V

O

Common Mode Interference Immunity

(VCM=10 V

P-P

, V

=5 V, TA=25°C)

CC

High (IF=0 mA)
6N135 (R
6N136 (R

Low (I
6N135 (R
6N136 (R

=16 mA)

F

=4.1 kΩ)

L

=1.9 kΩ)

L

=4.1 kΩ)

L

=1.9 kΩ)

L

CM
CM

CM
CM

1000

H

1000

H

1000

L

1000

L

Figure 3. Output characteristics-6N135
Output current versus output voltage

(T

=25°C, VCC=5 V)

A

Figure 4. Output characteristics-6N136
Output current versus output voltage

(TA=25°C, VCC=5 V)

V/µs
V/µs

V/µs
V/µs

Pulse generator

+V

CM

=50 Ω

Z

O

tf=8 ns

t

,

r

6N135/136

5–2