Sharp S11MS3, S21MS3, S21MS4 Datasheet

S11MS3/S21MS3/S21MS4

S11MS3/

S21MS3/S21MS4

■ Features

1. Ultra-compact, mini-flat package type ( 3.6 x 4.4 x 2.0mm)

2. Built-in zero-cross circuit

(S21MS4 )

3. High isolation voltage between input and output (Viso : 3 750Vrms )

4. Recognized by UL, file No.E64380

■ Model Line-ups

		For 100V lines	For 200V lines
No built-in		S11MS3	S21MS3
zero-cross circuit
Built-in		-	S21MS4
zero-cross circuit
■ Applications

1.For triggering of medium/high power triacs

High Density Surface Mount Type

Mini-flat Package

Phototriac Coupler

■ Outline Dimensions								(Unit : mm )
	1.27± 0.25				MAX.	Internal connection
						diagram
Model No.	6 5		4		0.6	6	5	4
	S				0.2
					±			Zero-cross
Anode					4.4
								circuit
mark	1		3			1		3
			0.4± 0.1
	3.6± 0.3				C0.4		5.3± 0.3
				Input side
								± 0.05
					0.2
					±			0.2
					2.6
					±0.1			0.5+- 0.20.4
							7.0+- 0.70.2
					0.1
		6 ˚
	1	Anode			5	No external connection
	3	Cathode			6	Anode/
	4	Anode/				cathode
		cathode
	Zero-cross circuit for S21MS4

■ Absolute Maximum Ratings						( Ta = 25˚C)
	Parameter	Symbol		Rating			Unit
			S11MS3		S21MS3/S21MS4
Input	Forward current	IF		50			mA
	Reverse voltage	VR		6			V
Output	1 RMS ON-state current	IT		0.05			A rms
	2 Peak one cycle surge current	Isurge		0.6			A
	Repetitive peak OFF-state voltage	VDRM	400		600		V
	3 Isolation voltage	Viso		3 750			Vrms
	Operating temperature	Topr	- 30 to +100				˚C
	Storage temperatrue	Tstg	- 40 to +125				˚C
	4 Soldering temperature	Tsol		260			˚C

1 The definition of conduction angle θ of effective ON current IT should be as shown in the right drawing.

2 50Hz sine wave

3 40 to 60% RH, AC for 1 minute4 For 10 seconds,

IT	2 • IT	θ1, θ2<= 90˚
		θ2
(A)		180˚
0	90˚	360˚	θ
	θ 1

Soldering area

0.2mm or more

“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device”.

S11MS3/S21MS3/S21MS4

■ Electro-optical Characteristics

(Ta= 25˚C)

Parameter

Symbol

Conditions

MIN.

TYP.

MAX.

Unit

Input

Forward voltage

VF

IF = 20mA

-

1.2

1.4

V

Reverse current

IR

VR = 3V

-

-

10

μA

Repetitive peak OFF-state current

I DRM

VDRM = Rated

-

-

1

μA

ON-state voltage

VT

IT = 0.05A

-

-

2.5

V

Output

Holding current

IH

VD = 6V

0.1

-

3.5

mA

Critical rate of rise of OFF-state voltage

dV/dt

V DRM = 1/

• Rated

100

1 000

-

V/ μ s

2

Zero-cross

S21MS4

VOX

IF = 15mA, Resistance load

-

-

35

V

voltage

Transfer

Minimum trigger current

I FT

VD = 6V, RL = 100Ω

-

-

10

mA

Isolation resistance

RISO

DC500V, 40 to 60% RH

5 x 1010

1011

-

Ω

charac-

S11MS3/S21MS3

VD = 6V, RL = 100Ω ,

-

-

100

μ s

teristics

Turn-on time

t on

S21MS4

IF = 20mA

-

-

50

Fig. 1 RMS ON-state Current vs. Ambient Temperature

	60
)	50
rms
mA
(	40
T
I
-state current	30
	20
RMS ON
	10
	0
	-30	0	50	100
		Ambient temperature T a (˚C)

Fig. 3 Forward Current vs.

Forward Voltage

	200
	100
)	50	T a = 100˚C
		75˚C
mA
		50˚C			25˚C
(
F	20				0˚C
I
current					- 30˚C
	10
Forward
	5
	2
	1
	0	0.5	1.0	1.5	2.0	2.5	3.0
		Forward voltage V F (V)

Fig. 2 Forward Current vs.

Ambient Temperature

	60
	50
)
mA	40
(
F
I
current	30
Forward	20
	10
	0
	- 30	0	50	100
		Ambient temperature T a		(˚C)

Fig. 4-a Minimum Trigger Current vs.

	Ambient Temperature
	12			(S11MS3/S21MS3)
						V D = 6V
	10					R L = 100Ω
)
mA
(
FT	8
current I	6
trigger	4
Minimum
	2
	0	0	20	40	60	80	100
	-30
		Ambient temperature T a (˚C)