Sharp S11MD7T, S11MD8T, S11MD9T, S21MD7T, S21MD8T Datasheet
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S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
S11MD7T/S11MD8T/S11MD9T
S21MD7T/S21MD8T/S21MD9T
Taping reel type of S21MD8T is also available ( S21MD8P)
DIN-VDE0884 approved type is also available.
■ Features
1.Low input driving current
(S11MD7T/ S11MD8T/ S21MD7T/ S21MD8T
IFT : MAX. 5mA
S11MD9T /S21MD9T IFT : MAX.7mA )
2.Pin No. 5 completely molded for external noise resistance
3.Built-in zero-cross circuit (S11MD8T/S21MD8T)
4.High repetitive peak OFF-state voltage ( S11MD7T / S11MD8T / S11MD9T
VDRM : MIN. 400V
S21MD7T / S21MD8T / S21MD9T
VDRM : MIN. 600V
5.Isolation voltage between input and output ( Viso : 5 000Vrms )
6.Recognized by UL, file No.E64380
■ Model Line-ups
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100V line |
200V line |
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No zero-cross |
S11MD7T/ |
S21MD7T/ |
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circuit |
S11MD9T |
S21MD9T |
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Built-in zero- |
S11MD8T |
S21MD8T |
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cross circuit |
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Low Input Driving Type
Phototriac Coupler
■ Outline Dimensions |
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( Unit : mm) |
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Internal connection |
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diagram |
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6 |
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4 |
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6 |
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4 |
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S11MD8T |
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±0.5 |
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Zero-cross |
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6.5 |
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circuit |
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Anode |
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3 |
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2 |
3 |
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mark |
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0.9± 0.2 |
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2.54± 0.25 |
1.2± 0.3 |
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7.12± 0.5 |
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7.62± 0.3 |
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± 0.5 |
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3.5 |
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± 0.5 |
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TYP. |
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3.35 |
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0.5 |
0.26 ± 0.1 |
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0.5 |
0.5± 0.1 |
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θ |
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± |
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θ : 0 to 13 ˚ |
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3.7 |
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1 |
Anode |
4 |
Anode/ |
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Cathode |
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Cathode |
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3 NC |
6 |
Anode/ |
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Cathode |
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Zero-cross circuit for S11MD8T and |
S21MD8T |
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■ Applications
1. For triggering medium/high power triacs
■ Absolute Maximum Ratings |
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( Ta = 25˚C) |
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Rating |
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Parameter |
Symbol |
S11MD7T/S11MD8T |
S21MD7T/S21MD8T/ |
Unit |
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S11MD9T |
S21MD9T |
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Input |
Forward current |
IF |
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50 |
mA |
Reverse voltage |
VR |
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6 |
V |
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RMS ON-state current |
IT |
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0.1 |
Arms |
Output |
1Peak one cycle surge current |
Isurge |
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1.2 |
A |
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Repetitive peak OFF-state voltage |
VDRM |
400 |
600 |
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2Isolation voltage |
Viso |
5 000 |
Vrms |
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Operating temperature |
Topr |
- 30 to +100 |
˚C |
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Storage temperture |
Tstg |
- 55 to +125 |
˚C |
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3Soldering temperature |
Tsol |
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260 |
˚C |
1 50Hz Sine wave
2 40 to 60% RH, AC for 1 minute, f = 60Hz3 For 10 seconds
“ In the absence of confirmation by device specification sheets, SHARP takes no responsibility for any defects that occur in equipment using any of SHARP's devices, shown in catalogs, data books, etc. Contact SHARP in order to obtain the latest version of the device specification sheets before using any SHARP's device”.
S11MD7T/S11MD8T/S11MD9T/S21MD7T/S21MD8T/S21MD9T
■ Electro-optical Characteristics |
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( Ta = 25˚C) |
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Parameter |
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Symbol |
Conditions |
MIN. |
TYP. |
MAX. |
Unit |
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Input |
Forward voltage |
VF |
IF = 20mA |
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1.2 |
1.4 |
V |
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Reverse current |
IR |
VR = 3V |
- |
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10 - 5 |
A |
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Repetitive peak OFF-state current |
I DRM |
VDRM = Rated |
- |
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10 - 6 |
A |
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S11MD7T/S21MD7T |
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1.5 |
2.5 |
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ON-state voltage |
S11MD9T/S21MD9T |
VT |
IT = 0.1A |
V |
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Output |
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S11MD8T/S21MD8T |
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1.7 |
2.5 |
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Holding current |
IH |
VD = 6V |
0.1 |
0.5 |
3.5 |
mA |
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Critical rate of rise of OFF-state voltage |
dV/dt |
V DRM = 1/ |
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• Rated |
100 |
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V/ μs |
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2 |
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Zere-cross voltage |
S11MD8T/S21MD8T |
VOX |
Resistance load, I F = 10mA |
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35 |
V |
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Minimum trigger |
S11MD7T/S21MD7T |
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V D = 6V, RL = 100Ω |
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5 |
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S11MD8T/S21MD8T |
IFT |
mA |
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current |
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Transfer |
S11MD9T/S21MD9T |
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Isolation resistance |
RISO |
DC500V, 40 to 60% RH |
5 x 1010 |
1011 |
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Ω |
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charac- |
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S11MD7T |
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70 |
100 |
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teristics |
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Turn-on time |
S11MD9T/S21MD7T/ |
t on |
V D = 6V, R L = 100Ω |
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60 |
100 |
μs |
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S21MD9T |
IF = 20mA |
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S11MD8T/S21MD8T |
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20 |
50 |
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Fig. 1 RMS ON-state Current vs. Ambient Temperature
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0.10 |
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) |
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Arms |
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( |
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T |
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current I |
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RMS ON-state |
0.05 |
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0 |
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-30 |
0 |
20 |
40 |
60 |
80 |
100 |
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Ambient temperature T a (˚C) |
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Fig. 2 Forward Current vs.
Ambient Temperature
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70 |
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60 |
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50 |
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mA |
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( |
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F |
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I |
40 |
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current |
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30 |
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Forward |
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20 |
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10 |
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0 |
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-30 |
0 |
25 |
50 |
75 |
100 |
125 |
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Ambient temperature T a |
(˚C) |
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