Panasonic LN55 Datasheet

Infrared Light Emitting Diodes

LN55

GaAs Infrared Light Emitting Diode

For optical control systems

Features

High-power output, high-efficiency : PO = 3.5 mW (typ.)

Suited for use with silicon photodetectors

Infrared light emission close to monochromatic light : λP = 950 nm (typ.)

High-speed modulation capability

Absolute Maximum Ratings (Ta = 25˚C)

Parameter	Symbol	Ratings		Unit
Power dissipation	PD	75		mW
Forward current (DC)	IF	50		mA
Pulse forward current	*	1		A
	IFP
Reverse voltage (DC)	VR	3		V
Operating ambient temperature	Topr	–25 to +85		˚C
Storage temperature	Tstg	–30 to +100		˚C

* f = 100 Hz, Duty cycle = 0.1 %

						Unit : mm
			4.5±0.3			4.2±0.3
	ø3.5±0.2				Not soldered	2.3	1.9
		4.8±0.3	2.4 2.4
12.8 min.	2.8	1.8	1.0		2-0.98±0.2
	10.0 min.				2-0.45±0.15
						0.45±0.15
				2.54		1.2
		R1.75
			1	2
						1: Cathode
						2: Anode

Electro-Optical Characteristics (Ta = 25˚C)

Parameter	Symbol	Conditions	min	typ	max	Unit
Radiant power	PO	IF = 50mA	1.8	3.5		mW
Peak emission wavelength	λP	IF = 50mA		950		nm
Spectral half band width	Δλ	IF = 50mA		50		nm
Forward voltage (DC)	VF	IF = 50mA			1.5	V
Reverse current (DC)	IR	VR = 3V			10	μA
Capacitance between pins	Ct	VR = 0V, f = 1MHz		50		pF
Half-power angle	θ	The angle in which radiant intencity is 50%		35		deg.

			IF — Ta							IFP — Duty cycle							IF — VF
	60											Ta = 25˚C			80
									10 2									Ta = 25˚C
(mA)	50							(A)							70
F								I	10					(mA)	60
I
	40							FP
currentforwardAllowable								currentforwardPulse						IcurrentForward	50
														F
									1
	30														40
	20								10 –1						30
															20
	10								10 –2
															10
	0								10 –3	10 –1			10 2		0
	– 25	0	20	40	60	80	100		10 –2		1	10			0	0.4	0.8	1.2	1.6
		Ambient temperature				Ta (˚C )				Duty cycle (%)						Forward voltage		VF (V)

1