NEC Electronics Inc UPA810TF, UPA810TC, UPA810T-T1, UPA810T Datasheet

DATA SHEET

NPN SILICON RF TWIN TRANSISTOR

μPA810TC

NPN SILICON EPITAXIAL TRANSISTOR

(WITH BUILT-IN 2 × 2SC5006)

FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD

DESCRIPTION

The μPA810TC has built-in low-voltage two transistors which are designed to amplify low noise in the VHF band to the UHF band.

FEATURES

•Low noise: NF = 1.2 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

•High gain: |S21e|2 = 9.0 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA

•Flat-lead 6-pin thin-type ultra super minimold

•Built-in 2 transistors (2 × 2SC5006)

ORDERING INFORMATION

Part Number	Package		Quantity	Supplying Form
μPA810TC	Flat-lead 6-pin		Loose products	Embossed tape 8 mm wide.
	thin-type ultra		(50 pcs)	Pin 6 (Q1 Base), Pin 5 (Q1 Emitter), Pin 4 (Q2 Emitter) face to
	super minimold			perforation side of the tape.
μPA810TC-T1			Taping products
			(3 kp/reel)

Remark To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

μPA810TC. Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = +25°C)

Parameter	Symbol	Ratings	Unit
Collector to Base Voltage	VCBO	20	V
Collector to Emitter Voltage	VCEO	12	V
Emitter to Base Voltage	VEBO	3	V
Collector Current	IC	100	mA
Total Power Dissipation	PTNote	200 in 1 element	mW
		230 in 2 elements
Junction Temperature	Tj	150	˚C
Storage Temperature	Tstg	–65 to +150	˚C

Note Mounted on 1.08 cm2 × 1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices

The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.

Document No. P14550EJ1V0DS00 (1st edition)
Date Published	November 1999 N CP(K)
Printed in Japan	©		1999

								μPA810TC
	ELECTRICAL CHARACTERISTICS (TA = +25 °C)
	Parameter	Symbol		Conditions	MIN.	TYP.	MAX.		Unit
	Collector Cutoff Current	ICBO	VCB = 10 V, IE = 0		–	–	1.0		μA
	Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0		–	–	1.0		μA
	DC Current Gain	hFE	VCE = 3 V, IC = 7 mANote 1		70	–	140
	Gain Bandwidth Product	fT	VCE = 3	V, IC = 7 mA, f = 1 GHz	3.0	4.5	–		GHz
	Feedback Capacitance	Cre	VCB = 3	V, IE = 0, f = 1 MHzNote 2	–	0.7	1.5		pF
	Insertion Power Gain	|S21e|2	VCE = 3	V, IC = 7 mA, f = 1 GHz	7.0	9.0	–		dB
	Noise Figure	NF	VCE = 3	V, IC = 7 mA, f = 1 GHz	–	1.2	2.5		dB

Notes 1. Pulse Measurement: PW ≤ 350 μs, Duty Cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank	FB
Marking	75
hFE Value	70 to 140

2	Data Sheet P14550EJ1V0DS00

TYPICAL CHARACTERISTICS (TA = +25 °C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

(mW)	230	2 Elements in total	Free Air
	200	Per
PT
		Element
Dissipation
	100
Total Power
	0	50	100	150
	0
		Ambient Temperature TA (°C)

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

	25
(mA)	20
																														IB = 160 μ A
IC
Current	15																													IB = 140 μ A
																														IB = 120 μ A
Collector	10																													IB = 100 μ A
	5
																														IB = 60 μA
																														IB = 80							μA
																														IB = 40							μ		A
	0																													IB = 20							μ		A
			1									2									3				4				5								6
	0
					Collector to Emitter Voltage																								VCE (V)
					GAIN BANDWIDTH PRODUCT vs.
					COLLECTOR CURRENT
	6.00
(GHz)fT			VCE = 3 V
	5.00		f = 1 GHz
Product	4.00
	3.00
Bandwidth
	2.00
Gain
	1.00
	0.00
																					10																100
	1
										Collector Current															IC (mA)

μPA810TC

COLLECTOR CURRENT vs. BASE TO

EMITTER VOLTAGE

	20
IC (mA)			VCE = 3 V
CurrentCollector	10
	0

	0		0.5																																			1.0
						Base to Emitter Voltage VBE (V)
							DC CURRENT GAIN vs.
							COLLECTOR CURRENT
1 000
																													VCE = 3 V
hFE
Gain	100
DC Current
	10
			1																				10															100
	0.1
								Collector Current																IC (mA)
						INSERTION POWER GAIN vs.
						COLLECTOR CURRENT
	14.00
(dB)			VCE = 3 V
	12.00		f = 1 GHz
ï2
S21e	10.00
ï
Gain	8.00
Power	6.00
Insertion	4.00
	2.00
			10																																			100
	1
								Collector Current																IC (mA)

Data Sheet P14550EJ1V0DS00

3

μPA810TC

Noise Figure NF (dB)

Feedback Capacitance Cre (pF)

NOISE FIGURE vs. COLLECTOR CURRENT

6.00

VCE = 3 V

f = 1 GHz

5.00

4.00

3.00

2.00

1.00

0.00

1

10

100

Collector Current IC (mA)

FEEDBACK CAPACITANCE vs.

COLLECTOR TO BASE VOLTAGE

0.900

f = 1 MHz

0.800

0.700

0.600

0.500

0.400

0.300

0.200

0.100

0.000

1

10

100

Collector to Base Voltage VCB (V)

Insertion Power Gain ïS21eï2 (dB)

INSERTION POWER GAIN vs. FREQUENCY

25.0

VCE = 3 V IC = 7 mA

20.0

15.0

10.0

5.0

0.0

0.1	1.0	10.0
	Frequency f (GHz)

4	Data Sheet P14550EJ1V0DS00