NEC Electronics Inc UPA809TF, UPA809T-T1, UPA809T Datasheet

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

μPA809T

MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD

FEATURES

•Low Voltage Operation, Low Phase Distortion

•Low Noise

NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

•Large Absolute Maximum Collector Current IC = 100 mA

•A Mini Mold Package Adopted

•Built-in 2 Transistors (2 × 2SC5193)

PACKAGE DRAWINGS

(Unit: mm)

2.1±0.1

1.25±0.1

						+0.1	–0
2.0±0.2	1.3	0.65 0.65	2 1	Y X	5 6	0.2
			3		4

ORDERING INFORMATION

PART NUMBER	QUANTITY	PACKING STYLE
μPA809T	Loose products	Embossed tape 8 mm wide. Pin 6 (Q1
	(50 PCS)	Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
		face to perforation side of the tape.
μPA809T-T1	Taping products
	(3 KPCS/Reel)

Remark If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER	SYMBOL	RATING	UNIT
Collector to Base Voltage	VCBO	9	V
Collector to Emitter Voltage	VCEO	6	V
Emitter to Base Voltage	VEBO	2	V
Collector Current	IC	100	mA
Total Power Dissipation	PT	150 in 1 element	mW
		200 in 2 elementsNote
Junction Temperature	Tj	150	˚C
Storage Temperature	Tstg	–65 to +150	˚C

Note 110 mW must not be exceeded in 1 element.

0.9±0.1	0.7	+0.1	–0
	0~0.1	0.15

PIN CONFIGURATION (Top View)

		6			5	4
		Q1							Q2
1				2		3

PIN CONNECTIONS
1.	Collector (Q1)	4.	Emitter (Q2)
2.	Emitter (Q1)	5.	Base (Q2)
3.	Collector (Q2)	6.	Base (Q1)

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

The information in this document is subject to change without notice.

Document No. ID-3643

(O.D. No. ID-9150)

Date Published	April 1995 P
Printed in Japan	©		1995

								μPA809T
	ELECTRICAL CHARACTERISTICS		(TA = 25 °C)
	PARAMETER	SYMBOL		CONDITION	MIN.	TYP.	MAX.	UNIT
	Collector Cutoff Current	ICBO	VCB = 5 V, IE = 0				0.1	μA
	Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0				0.1	μA
	DC Current Gain	hFE	VCE = 1 V, IC = 3 mANote 1		80		160
	Gain Bandwidth Product (1)	fT	VCE = 1 V, IC = 3 mA, f = 2 GHz		4.0	4.5		GHz
	Gain Bandwidth Product (2)	fT	VCE = 3 V, IC = 20 mA, f = 2 GHz			9.0		GHz
	Feed-back Capacitance	Cre	VCB = 1 V, IE = 0, f = 1 MHzNote 2			0.75	0.85	pF
	Insertion Power Gain (1)	|S21|2	VCE = 1 V, IC = 3 mA, f = 2 GHz		2.5	3.5		dB
	Insertion Power Gain (2)	|S21|2	VCE = 3	V, IC = 20 mA, f = 2 GHz		6.5		dB
	Noise Figure (1)	NF	VCE = 1	V, IC = 3 mA, f = 2 GHz		1.7	2.5	dB
	Noise Figure (2)	NF	VCE = 3	V, IC = 7 mA, f = 2 GHz		1.5		dB
	hFE Ratio	hFE1/hFE2	VCE = 1	V, IC = 3 mA	0.85
			A smaller value among
			hFE of hFE1 = Q1, Q2
			A larger value among
			hFE of hFE2 = Q1, Q2

Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank	KB
Marking	T88
hFE Value	80 to 160

2

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE

(mW)						Free Air
	200
PT
Dissipation			2	Elements
		Per			in	Total
	100		Element
Total Power
	0	50				100	150
		Ambient Temperature TA (°C)

			COLLECTOR CURRENT vs.
	30		COLLECTOR TO EMITTER VOLTAGE
																200 μA
(mA)IC																180 μA
	20															160			μA
Current																140 μA
																100 μA
																120			μA
Collector	10															80 μA
																60 μA
																40 μA
																IB = 20 μA
	0	1			2			3			4				5				6
			Collector to Emitter Voltage VCE (V)
					GAIN BANDWIDTH PRODUCT
	10				vs. COLLECTOR CURRENT
(GHz)fProductT		f = 2 GHz
		VCE = 1 V
Gain Bandwidth	5
	0
		1						2			3				5				7			10

Collector Current IC (mA)

μPA809T

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

	100
	50	VCE = 1 V
(mA)IC	20
	5
Current	10
	2
	1
Collector	0.5
	0.2
	0.1
	0.05
	0.02
	0.01
	0	0.5									1

Base to Emitter Voltage VBE (V)

DC CURENT GAIN vs.

COLLECTOR CURRENT

	200
		VCE = 1 V
Gain hFE
CurrentDC	100
	0

	0.1		0.2		0.5	1	2		5		10		20		50			100
					Collector Current IC (mA)
					INSERTION GAIN vs.
	10				COLLECTOR CURRENT
(dB)			f = 2 GHz
			VCE = 1 V
2
|S21e|
Gain	5
Insertion Power
	0
			1				2		3				5		7			10

Collector Current IC (mA)

3