PRELIMINARY DATA SHEET
SILICON TRANSISTOR
μPA809T
MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES
•Low Voltage Operation, Low Phase Distortion
•Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
•Large Absolute Maximum Collector Current IC = 100 mA
•A Mini Mold Package Adopted
•Built-in 2 Transistors (2 × 2SC5193)
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
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+0.1 |
–0 |
2.0±0.2 |
1.3 |
0.65 0.65 |
2 1 |
Y X |
5 6 |
0.2 |
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3 |
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ORDERING INFORMATION
PART NUMBER |
QUANTITY |
PACKING STYLE |
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μPA809T |
Loose products |
Embossed tape 8 mm wide. Pin 6 (Q1 |
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(50 PCS) |
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter) |
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face to perforation side of the tape. |
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μPA809T-T1 |
Taping products |
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(3 KPCS/Reel) |
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Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER |
SYMBOL |
RATING |
UNIT |
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Collector to Base Voltage |
VCBO |
9 |
V |
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Collector to Emitter Voltage |
VCEO |
6 |
V |
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Emitter to Base Voltage |
VEBO |
2 |
V |
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Collector Current |
IC |
100 |
mA |
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Total Power Dissipation |
PT |
150 in 1 element |
mW |
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200 in 2 elementsNote |
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Junction Temperature |
Tj |
150 |
˚C |
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Storage Temperature |
Tstg |
–65 to +150 |
˚C |
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Note 110 mW must not be exceeded in 1 element.
0.9±0.1 |
0.7 |
+0.1 |
–0 |
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0~0.1 |
0.15 |
PIN CONFIGURATION (Top View)
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6 |
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5 |
4 |
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Q1 |
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Q2 |
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PIN CONNECTIONS |
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1. |
Collector (Q1) |
4. |
Emitter (Q2) |
2. |
Emitter (Q1) |
5. |
Base (Q2) |
3. |
Collector (Q2) |
6. |
Base (Q1) |
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
Document No. ID-3643
(O.D. No. ID-9150)
Date Published |
April 1995 P |
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Printed in Japan |
© |
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1995 |
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μPA809T |
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ELECTRICAL CHARACTERISTICS |
(TA = 25 °C) |
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PARAMETER |
SYMBOL |
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CONDITION |
MIN. |
TYP. |
MAX. |
UNIT |
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Collector Cutoff Current |
ICBO |
VCB = 5 V, IE = 0 |
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0.1 |
μA |
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Emitter Cutoff Current |
IEBO |
VEB = 1 V, IC = 0 |
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0.1 |
μA |
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DC Current Gain |
hFE |
VCE = 1 V, IC = 3 mANote 1 |
80 |
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160 |
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Gain Bandwidth Product (1) |
fT |
VCE = 1 V, IC = 3 mA, f = 2 GHz |
4.0 |
4.5 |
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GHz |
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Gain Bandwidth Product (2) |
fT |
VCE = 3 V, IC = 20 mA, f = 2 GHz |
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9.0 |
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Feed-back Capacitance |
Cre |
VCB = 1 V, IE = 0, f = 1 MHzNote 2 |
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0.75 |
0.85 |
pF |
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Insertion Power Gain (1) |
|S21|2 |
VCE = 1 V, IC = 3 mA, f = 2 GHz |
2.5 |
3.5 |
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dB |
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Insertion Power Gain (2) |
|S21|2 |
VCE = 3 |
V, IC = 20 mA, f = 2 GHz |
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6.5 |
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dB |
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Noise Figure (1) |
NF |
VCE = 1 |
V, IC = 3 mA, f = 2 GHz |
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1.7 |
2.5 |
dB |
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Noise Figure (2) |
NF |
VCE = 3 |
V, IC = 7 mA, f = 2 GHz |
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1.5 |
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dB |
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hFE Ratio |
hFE1/hFE2 |
VCE = 1 |
V, IC = 3 mA |
0.85 |
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A smaller value among |
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hFE of hFE1 = Q1, Q2 |
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A larger value among |
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hFE of hFE2 = Q1, Q2 |
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Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank |
KB |
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Marking |
T88 |
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hFE Value |
80 to 160 |
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2
TYPICAL CHARACTERISTICS (TA = 25 °C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
(mW) |
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Free Air |
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200 |
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PT |
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Dissipation |
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2 |
Elements |
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Per |
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in |
Total |
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100 |
Element |
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Total Power |
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0 |
50 |
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100 |
150 |
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Ambient Temperature TA (°C) |
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COLLECTOR CURRENT vs. |
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30 |
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COLLECTOR TO EMITTER VOLTAGE |
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200 μA |
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(mA)IC |
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180 μA |
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20 |
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160 |
μA |
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Current |
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140 μA |
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100 μA |
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120 |
μA |
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Collector |
10 |
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80 μA |
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60 μA |
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40 μA |
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IB = 20 μA |
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0 |
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6 |
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Collector to Emitter Voltage VCE (V) |
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GAIN BANDWIDTH PRODUCT |
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10 |
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vs. COLLECTOR CURRENT |
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(GHz)fProductT |
f = 2 GHz |
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VCE = 1 V |
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Gain Bandwidth |
5 |
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0 |
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Collector Current IC (mA)
μPA809T
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
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100 |
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50 |
VCE = 1 V |
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(mA)IC |
20 |
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5 |
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Current |
10 |
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2 |
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1 |
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Collector |
0.5 |
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0.2 |
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0.1 |
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0.05 |
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0.02 |
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0.01 |
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0 |
0.5 |
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1 |
Base to Emitter Voltage VBE (V)
DC CURENT GAIN vs.
COLLECTOR CURRENT
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VCE = 1 V |
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Gain hFE |
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CurrentDC |
100 |
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0.1 |
0.2 |
0.5 |
1 |
2 |
5 |
10 |
20 |
50 |
100 |
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Collector Current IC (mA) |
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INSERTION GAIN vs. |
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10 |
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COLLECTOR CURRENT |
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(dB) |
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f = 2 GHz |
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VCE = 1 V |
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2 |
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|S21e| |
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Gain |
5 |
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Insertion Power |
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0 |
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1 |
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2 |
3 |
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5 |
7 |
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10 |
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Collector Current IC (mA)
3