NEC Electronics Inc UPA808TC-T1, UPA808TC, UPA808T-T1, UPA808T Datasheet

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NEC Electronics Inc UPA808TC-T1, UPA808TC, UPA808T-T1, UPA808T Datasheet

DATA SHEET

SILICON TRANSISTOR

μPA808T

MICROWAVE LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD

FEATURES

Low Noise

NF = 1.3 dB TYP. @VCE = 2 V, IC = 3 mA, f = 2 GHz NF = 1.3 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz

A Super Mini Mold Package Adopted

Built-in 2 Transistors (2 × 2SC5184)

ORDERING INFORMATION

PART NUMBER

QUANTITY

 

PACKING STYLE

 

 

 

μPA808T

Loose products

Embossed tape 8 mm wide. Pin 6

 

(50 PCS)

(Q1

Base), Pin 5 (Q2 Base), Pin 4

 

 

(Q2

Emitter) face to perforation

μPA808T-T1

Taping products

side of the tape.

 

(3 KPCS/Reel)

 

 

 

 

 

 

 

Remark If you require an evaluation sample, please contact an

NEC Sales Representative. (Unit sample quantity is 50

pcs.)

PACKAGE DRAWINGS

(Unit: mm)

2.1±0.1

1.25±0.1

 

 

 

 

 

 

+0.1

–0

2.0±0.2

1.3

0.65 0.65

2 1

Y X

5 6

0.2

 

 

 

3

 

4

 

 

0.9±0.1

0.7

+0.1

–0

 

0.1

0.15

 

0 to

 

 

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER

SYMBOL

RATING

UNIT

 

 

 

 

Collector to Base Voltage

VCBO

5

V

 

 

 

 

Collector to Emitter Voltage

VCEO

3

V

 

 

 

 

Emitter to Base Voltage

VEBO

2

V

 

 

 

 

Collector Current

IC

30

mA

 

 

 

 

Total Power Dissipation

PT

90 in 1 element

mW

 

 

180 in 2 elementsNote

 

Junction Temperature

Tj

150

°C

 

 

 

 

Storage Temperature

Tstg

–65 to +150

°C

 

 

 

 

Note 110 mW must not be exceeded in 1 element.

PIN CONFIGURATION (Top View)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

6

 

 

5

4

 

 

 

 

Q1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Q2

 

 

 

 

 

 

 

 

 

 

 

1

 

 

2

3

 

 

 

 

 

 

 

 

 

 

 

 

PIN CONNECTIONS

 

 

 

 

 

1.

Collector (Q1)

4.

Emitter (Q2)

2.

Emitter (Q1)

5.

Base (Q2)

3.

Collector (Q2)

6.

Base (Q1)

This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.

Document No. P12154EJ2V0DS00 (2nd edition) (Previous No. ID-3642)

Date Published November 1996 N

©

 

19954

 

Printed in Japan

 

 

 

 

 

 

 

 

 

 

 

 

μPA808T

 

ELECTRICAL CHARACTERISTICS (TA = 25 °C)

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

PARAMETER

SYMBOL

 

CONDITION

MIN.

TYP.

MAX.

UNIT

 

 

 

 

 

 

 

 

 

 

 

Collector Cutoff Current

ICBO

VCB = 5 V, IE = 0

 

 

0.1

μA

 

 

 

 

 

 

 

 

 

 

 

Emitter Cutoff Current

IEBO

VEB = 1 V, IC = 0

 

 

0.1

μA

 

 

 

 

 

 

 

 

 

 

 

DC Current Gain

hFE

VCE = 2 V, IC = 20 mANote 1

70

 

140

 

 

 

Gain Bandwidth Product (1)

fT

VCE = 2 V, IC = 20 mA, f = 2 GHz

9

11

 

GHz

 

 

 

 

 

 

 

 

 

 

 

Gain Bandwidth Product (2)

fT

VCE = 1 V, IC = 10 mA, f = 2 GHz

7

9

 

GHz

 

 

 

 

 

 

 

 

 

 

 

Feed-back Capacitance

Cre

VCB = 2 V, IE = 0, f = 1 MHzNote 2

 

0.4

0.8

pF

 

 

Insertion Power Gain (1)

|S21e|2

VCE = 2 V, IC = 20 mA, f = 2 GHz

7

8.5

 

dB

 

 

Insertion Power Gain (2)

|S21e|2

VCE = 1

V, IC = 10 mA, f = 2 GHz

6

7.5

 

dB

 

 

Noise Figure (1)

NF

VCE = 2

V, IC = 3 mA, f = 2 GHz

 

1.3

2

dB

 

 

 

 

 

 

 

 

 

 

 

 

Noise Figure (2)

NF

VCE = 1

V, IC = 3 mA, f = 2 GHz

 

1.3

2

dB

 

 

 

 

 

 

 

 

 

 

 

 

hFE Ratio

hFE1/hFE2

VCE = 2

V, IC = 20 mA

0.85

 

 

 

 

 

 

 

A smaller value among

 

 

 

 

 

 

 

 

hFE of hFE1 = Q1, Q2

 

 

 

 

 

 

 

 

A larger value among

 

 

 

 

 

 

 

 

hFE of hFE2 = Q1, Q2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Notes 1. Pulse Measurement: Pw 350 μs, Duty cycle 2 %

 

 

 

 

 

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank

KB

 

 

Marking

T86

 

 

hFE Value

70 to 140

 

 

TYPICAL CHARACTERISTICS (TA = 25 °C)

TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE

(mW)

200

2 Elements in Total

 

 

PT

 

180 mW

 

Dissipation

100

Per Element

 

 

Total Power

90 mW

 

 

 

 

 

 

0

50

100

150

 

 

Ambient Temperature TA (°C)

 

COLLECTOR CURRENT vs.

COLLECTOR TO EMITTER VOLTAGE

(mA)IC

25

 

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

180

μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

200

μA

 

 

 

Current

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

120

μA

 

 

 

 

15

 

 

 

 

 

 

160

μA

 

 

 

 

 

 

 

 

 

 

 

140 μA

 

 

 

Collector

 

 

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

100 μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

80 μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

5

 

 

 

 

 

 

60 μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

40 μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IB = 20 μA

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

1.0

2.0

3.0

 

 

 

 

 

Collector to Emitter Voltage VCE (V)

COLLECTOR CURRENT vs.

BASE TO EMITTER VOLTAGE

 

50

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 2 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

IC (mA)

40

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

30

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Current

 

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Collector

 

 

 

 

 

 

 

 

 

 

 

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

0.5

1.0

Base to Emitter Voltage VBE (V)

DC CURRENT GAIN vs.

COLLECTOR CURRENT

 

500

 

 

 

 

 

 

hFE

200

 

 

 

 

 

 

 

 

 

 

VCE = 2 V

 

 

Gain

 

 

 

 

 

 

100

 

 

 

 

 

 

DC Current

50

 

 

VCE = 1 V

 

 

 

 

 

 

 

 

 

 

20

 

 

 

 

 

 

 

10

2

5

10

20

50

100

 

1

Collector Current IC (mA)

2

GAIN BANDWIDTH PRODUCT vs. COLLECTOR CURRENT

 

15

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

fT (GHz)

 

f = 2 GHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Product

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 2 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Bandwidth

10

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 1 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Gain

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

 

3

 

5

 

 

7

 

10

 

 

 

 

Collector Current IC (mA)

 

 

 

 

 

 

 

 

 

 

NOISE FIGURE vs.

 

 

 

 

 

 

 

 

 

 

 

 

 

 

COLLECTOR CURRENT

 

 

 

3

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

f = 2 GHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

NF (dB)

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Figure

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 2 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Noise

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 1 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

2

3

5

7

10

 

 

 

 

 

Collector Current IC (mA)

 

 

 

 

 

μPA808T

INSERTION GAIN vs.

COLLECTOR CURRENT

 

10

f = 2 GHz

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

(dB)

 

 

 

 

 

 

 

 

 

VCE = 2 V

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

21e|

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

VCE = 1 V

 

 

 

|S

 

 

 

 

 

 

 

 

 

 

 

 

Gain

5

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Insertion Power

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

1

 

2

3

 

5

 

7

 

10

 

 

 

 

Collector Current IC (mA)

 

 

 

 

 

 

 

FEED-BACK CAPACITANCE vs.

 

 

 

 

 

 

 

COLLECTOR TO BASE VOLTAGE

 

 

 

0.8

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

re (pF)

 

 

 

 

 

 

 

 

 

f = 1 MHz

 

 

0.6

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

C

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Capacitanceback

0.2

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

Feed-

0.4

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

 

0

2.0

4.0

6.0

8.0

 

 

 

10.0

Collector to Base Voltage VCB (V)

3

μPA808T

S-PARAMETERS

VCE = 1 V, IC = 1 mA, ZO = 50 Ω

FREQUENCY

 

S11

 

S21

 

S12

 

S22

MHz

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

100.0000

0.974

–6.9

2.031

170.7

0.029

84.1

0.993

–5.5

200.0000

0.971

–14.0

1.953

162.5

0.057

78.0

0.982

–10.9

300.0000

0.956

–20.5

1.928

154.8

0.083

72.3

0.960

–15.5

400.0000

0.926

–28.4

2.021

147.6

0.105

67.5

0.925

–20.7

500.0000

0.902

–34.5

1.911

141.1

0.126

62.9

0.902

–24.9

600.0000

0.861

–42.2

1.941

135.2

0.144

58.6

0.861

–28.6

700.0000

0.829

–49.5

1.930

129.2

0.158

54.4

0.826

–32.6

800.0000

0.793

–55.6

1.864

123.6

0.172

51.1

0.791

–35.6

900.0000

0.753

–63.1

1.917

118.6

0.182

48.2

0.758

–38.5

1000.0000

0.723

–68.8

1.839

114.1

0.191

45.7

0.731

–41.3

1100.0000

0.691

–76.3

1.838

109.3

0.200

43.4

0.703

–43.4

1200.0000

0.652

–82.9

1.833

104.4

0.204

41.6

0.675

–45.6

1300.0000

0.628

–88.7

1.742

100.1

0.209

39.4

0.652

–47.9

1400.0000

0.587

–95.8

1.756

95.7

0.213

38.4

0.629

–49.5

1500.0000

0.565

–101.4

1.686

92.0

0.215

37.0

0.610

–51.6

1600.0000

0.535

–107.4

1.654

88.1

0.217

36.0

0.591

–53.0

1700.0000

0.508

–113.5

1.624

84.7

0.218

35.3

0.574

–54.6

1800.0000

0.489

–118.6

1.565

81.2

0.220

35.0

0.559

–56.0

1900.0000

0.471

–124.6

1.530

78.4

0.221

34.5

0.545

–57.4

2000.0000

0.449

–130.5

1.509

75.2

0.222

34.6

0.532

–59.0

VCE = 1 V, IC = 3 mA, ZO = 50 Ω

FREQUENCY

 

S11

 

S21

 

S12

 

S22

MHz

MAG

ANG

MAG

ANG

MAG

ANG

MAG

ANG

100.0000

0.917

–11.2

5.682

164.5

0.027

81.0

0.966

–10.7

200.0000

0.879

–22.2

5.447

154.3

0.052

72.7

0.914

–20.4

300.0000

0.830

–31.8

5.165

144.7

0.072

66.6

0.845

–28.1

400.0000

0.755

–44.2

5.205

136.0

0.087

61.7

0.764

–34.6

500.0000

0.703

–52.5

4.838

129.3

0.101

58.1

0.705

–39.7

600.0000

0.625

–63.5

4.684

122.1

0.111

55.8

0.639

–43.1

700.0000

0.560

–73.9

4.522

115.3

0.121

54.2

0.587

–46.8

800.0000

0.506

–81.8

4.219

109.8

0.129

53.3

0.543

–49.0

900.0000

0.456

–90.8

4.031

104.7

0.137

52.9

0.508

–51.3

1000.0000

0.411

–98.6

3.796

100.0

0.143

52.3

0.478

–52.9

1100.0000

0.384

–105.7

3.574

95.9

0.152

51.9

0.451

–54.4

1200.0000

0.346

–113.0

3.377

91.7

0.158

51.7

0.428

–55.6

1300.0000

0.327

–119.7

3.166

88.4

0.165

51.6

0.408

–57.2

1400.0000

0.303

–126.4

3.011

85.2

0.171

51.8

0.390

–58.2

1500.0000

0.289

–132.4

2.850

82.4

0.179

51.9

0.375

–59.6

1600.0000

0.273

–138.2

2.707

79.6

0.185

51.9

0.361

–60.2

1700.0000

0.261

–144.4

2.588

77.1

0.193

51.9

0.348

–61.3

1800.0000

0.252

–150.1

2.468

74.4

0.200

52.1

0.338

–62.4

1900.0000

0.247

–156.0

2.364

72.2

0.207

52.4

0.329

–63.4

2000.0000

0.242

–161.8

2.274

69.8

0.214

52.4

0.319

–64.8

4

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