NEC Electronics Inc UPA803T Datasheet

PRELIMINARY DATA SHEET

SILICON TRANSISTOR

μPA803T

NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD

μPA803T has built-in 2 transistors which were developed for UHF.

FEATURES

•High fT

fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz)

•Small Collector Capacitance

Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz)

•A Surface Mounting Package Adopted

•Built-in 2 Transistors (2 × 2SC4570)

PACKAGE DRAWINGS

(Unit: mm)

2.1±0.1

1.25±0.1

						+0.1	–0
2.0±0.2	1.3	0.65 0.65	2 1	Y X	5 6	0.2
			3		4

ORDERING INFORMATION

PART NUMBER	QUANTITY	PACKING STYLE
μPA803T	Loose products	Embossed tape 8 mm wide. Pin 6 (Q1
	(50 PCS)	Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
		face to perforation side of the tape.
μPA803T-T1	Taping products
	(3 KPCS/Reel)

Remark If you require an evaluation sample, please contact an NEC

Sales Representative. (Unit sample quantity is 50 pcs.)

ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)

PARAMETER	SYMBOL	RATING	UNIT
Collector to Base Voltage	VCBO	20	V
Collector to Emitter Voltage	VCEO	12	V
Emitter to Base Voltage	VEBO	3	V
Collector Current	IC	30	mA
Total Power Dissipation	PT	120 in 1 element	mW
		160 in 2 elementsNote
Junction Temperature	Tj	125	˚C
Storage Temperature	Tstg	–55 to +125	˚C

Note 90 mW must not be exceeded in 1 element.

0.9±0.1	0.7	+0.1	–0
	0~0.1	0.15

PIN CONFIGURATION (Top View)

		6			5	4
		Q1							Q2
1				2		3

PIN CONNECTIONS
1.	Collector (Q1)	4.	Emitter (Q2)
2.	Emitter (Q1)	5.	Base (Q2)
3.	Collector (Q2)	6.	Base (Q1)

The information in this document is subject to change without notice.

Document No. ID-3637

(O.D. No. ID-9144)

Date Published	April 1995 P
Printed in Japan	©		1995

								μPA803T
	ELECTRICAL CHARACTERISTICS		(TA = 25 °C)
	PARAMETER	SYMBOL		CONDITION	MIN.	TYP.	MAX.	UNIT
	Collector Cutoff Current	ICBO	VCB = 15 V, IE = 0				0.1	μA
	Emitter Cutoff Current	IEBO	VEB = 1 V, IC = 0				0.1	μA
	Collector to Emitter	VCE (sat)	hFE = 10, IC = 5 mA				0.5	V
	Saturation Voltage
	DC Current Gain	hFE	VCE = 5	V, IC = 5 mANote 1	60		200
	Gain Bandwidth Product	fT	VCE = 5	V, IC = 5 mA, f = 1 GHz	3.0	5.5		GHz
	Feed-back Capacitance	Cre	VCB = 5 V, IE = 0, f = 1 MHzNote 2			0.7	0.9	pF
	Insertion Power Gain	|S21|2	VCE = 5	V, IC = 5 mA, f = 1 GHz	5			dB
	hFE Ratio	hFE1/hFE2	VCE = 5	V, IC = 5 mA	0.85
			A smaller value among
			hFE of hFE1 = Q1, Q2
			A larger value among
			hFE of hFE2 = Q1, Q2

Notes 1. Pulse Measurement: Pw ≤ 350 μs, Duty cycle ≤ 2 %

2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.

hFE CLASSIFICATION

Rank	FB	GB
Marking	T73	T74
hFE Value	60 to 120	100 to 200

TYPICAL CHARACTERISTICS (TA = 25 °C)

		PT - TA		Characteristics
(mW)PT	150	160 mW			Free Air
						(mA)
DissipationPowerTotal		120 mW				CurrentCollectorIC
	100			2
				Elements
		Per
	50		Element		in
					Total
	0	50			100	150
		Ambient Temperature TA (°C)

IC - VBE Characteristics

24
	VCE = 5 V
16
8
0	0.2	0.4	0.6	0.8	1.0
	Base to Emitter Voltage VBE (V)

2

Collector Current IC (mA)

Gain Bandwidth Product fT (GHz)

Insertion Power Gain l S21e l 2 (dB)

IC - VCE Characteristics

30
																		IB =			160μA
20																							140			μA
																							120			μA
																							100			μA
10																							80			μA
																							60			μA
																							40			μA
																							20			μA
0					2		4				6							8								10
			Collector to Emitter Voltage VCE (V)
							fT - IC Characteristics
8
	f =		1	GHz
6
																		VCE		=			5		V
4
																	3 V
2
0
0.5		1			2		5				10						20	50					100

Collector Current IC (mA)

l S21e l 2 - f Characteristics

25

IC = 5 mA

20

15

VCE = 5 V

10

3 V

5

0

0.1 0.2 0.5 1.0 2.0 5.0

Frequency f (GHz)

μPA803T

hFE - IC Characteristics

	200
																						VCE = 5		V
Gain hFE	100
	50
DC Current
	20
	10
	0.5		1						2		5		10					20				50
									Collector Current IC (mA)
									l S21e l 2 - IC Characteristics
	16
l 2 (dB)																					f	= 1	GHz
	12												VCE = 5 V
l S21e
																			3 V
Gain	8
Power
Insertion	4
	0
	0.5		1						2		5		10					20				50

Collector Current IC (mA)

Cob - VCB Characteristics

	2.0
ob (pF)						f = 1 MHz
	1.0
C
Copacitance	0.7
	0.5
Collector	0.2
	0.1	2	5	7	10	20
	1
		Collector to Base Voltage VCB (V)

3