NEC UPA809TF, UPA809T-T1, UPA809T Datasheet
PRELIMINARY DATA SHEET
SILICON TRANSISTOR
µ
PA809T
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
FEATURES PACKAGE DRAWINGS
• Low Voltage Operation, Low Phase Distortion (Unit: mm)
• Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @V
CE = 1 V, IC = 3 mA, f = 2 GHz
• Large Absolute Maximum Collector Current
IC = 100 mA
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC5193)
1.3
2.0±0.2
0.650.65
2.1±0.1
1.25±0.1
123
XY
654
–0
+0.1
0.2
ORDERING INFORMATION
PART NUMBER
µ
PA809T Loose products Embossed tape 8 mm wide. Pin 6 (Q1
µ
PA809T-T1 Taping products
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
QUANTITY PACKING STYLE
(50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
(3 KPCS/Reel)
PIN CONFIGURATION (Top View)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 9V
Collector to Emitter Voltage VCEO 6V
Emitter to Base Voltage VEBO 2V
Collector Current IC 100 mA
Total Power Dissipation PT 150 in 1 element mW
200 in 2 elements
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Note
0.7
0.9±0.1
654
1
Q
123
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
0~0.1
Q
2
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
+0.1
–0
0.15
Note 110 mW must not be exceeded in 1 element.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
Document No. ID-3643
(O.D. No. ID-9150)
Date Published April 1995 P
Printed in Japan
The information in this document is subject to change without notice.
©
1995
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 5 V, IE = 0 0.1
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.1
DC Current Gain hFE VCE = 1 V, IC = 3 mA
Gain Bandwidth Product (1) fT VCE = 1 V, IC = 3 mA, f = 2 GHz 4.0 4.5 GHz
Gain Bandwidth Product (2) fT VCE = 3 V, IC = 20 mA, f = 2 GHz 9.0 GHz
Feed-back Capacitance Cre VCB = 1 V, IE = 0, f = 1 MHz
Insertion Power Gain (1) |S21|
Insertion Power Gain (2) |S21|
Noise Figure (1) NF VCE = 1 V, IC = 3 mA, f = 2 GHz 1.7 2.5 dB
Noise Figure (2) NF VCE = 3 V, IC = 7 mA, f = 2 GHz 1.5 dB
hFE Ratio hFE1/hFE2 VCE = 1 V, IC = 3 mA 0.85
2
VCE = 1 V, IC = 3 mA, f = 2 GHz 2.5 3.5 dB
2
VCE = 3 V, IC = 20 mA, f = 2 GHz 6.5 dB
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Note 1
Note 2
80 160
0.75 0.85 pF
µ
PA809T
µ
A
µ
A
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank KB
Marking T88
hFE Value 80 to 160
2
TYPICAL CHARACTERISTICS (TA = 25 °C)
050
Ambient Temperature T
A
(°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Free Air
Total Power Dissipation P
T
(mW)
100 150
100
200
01
2
3
4
5
6
Collector to Emitter Voltage V
CE
(V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
Collector Current I
C
(mA)
10
20
30
200 A
µ
180 A
µ
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60 A
µ
40 A
µ
IB = 20 A
µ
0 0.5
Base to Emitter Voltage V
BE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
V
CE
= 1 V
Collector Current I
C
(mA)
1
0.01
0.02
0.05
0.1
0.2
0.5
1
2
5
10
20
100
50
0.1 10.2 2 20 5050.5
Collector Current I
C
(mA)
DC Current Gain h
FE
10 100
100
0
200
V
CE
= 1 V
DC CURENT GAIN vs.
COLLECTOR CURRENT
0
Collector Current I
C
(mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
f = 2 GHz
V
CE
= 1 V
Gain Bandwidth Product f
T
(GHz)
35712 10
1357210
5
10
0
5
10
Collector Current I
C
(mA)
INSERTION GAIN vs.
COLLECTOR CURRENT
Insertion Power Gain |S
21e
|
2
(dB)
f = 2 GHz
V
CE
= 1 V
2 Elements in Total
Per Element
µ
PA809T
3
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