NEC UPA802TC-T1, UPA802T-T1, UPA802T Datasheet
SILICON TRANSISTOR
The µPA802T has built-in 2 low-voltage transistors which are designed
to amplify low noise in the VHF band to the UHF band.
FEATURES
• Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• High Gain
|S
21e|
2
= 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
• A Mini Mold Package Adopted
• Built-in 2 Transistors (2 × 2SC4227)
ORDERING INFORMATION
PART NUMBER
QUANTITY PACKING STYLE
µ
PA802T Loose products Embossed tape 8 mm wide. Pin 6 (Q1
(50 PCS) Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µ
PA802T-T1 Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C)
PARAMETER SYMBOL RATING UNIT
Collector to Base Voltage VCBO 20 V
Collector to Emitter Voltage VCEO 10 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 65 mA
Total Power Dissipation PT 150 in 1 element mW
200 in 2 elements
Note
Junction Temperature Tj 150 ˚C
Storage Temperature Tstg –65 to +150 ˚C
Note 110 mW must not be exceeded in 1 element.
µ
PA802T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
©
1995
PRELIMINARY DATA SHEET
Printed in Japan
Document No. ID-3636
(O.D. No. ID-9143)
Date Published April 1995 P
The information in this document is subject to change without notice.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
123
654
0.2
–0
+0.1
0.650.65
1.3
2.0±0.2
0.9±0.1
0.7
0~0.1
0.15
–0
+0.1
654
Q
1
Q
2
123
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
XY
µ
PA802T
2
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
PARAMETER SYMBOL CONDITION MIN. TYP. MAX. UNIT
Collector Cutoff Current ICBO VCB = 10 V, IE = 0 0.8
µ
A
Emitter Cutoff Current IEBO VEB = 1 V, IC = 0 0.8
µ
A
DC Current Gain hFE VCE = 3 V, IC = 7 mA
Note 1
70 240
Gain Bandwidth Product fT VCE = 3 V, IC = 7 mA, f = 1 GHz 4.5 7.0 GHz
Feed-back Capacitance Cre VCB = 3 V, IE = 0, f = 1 MHz
Note 2
0.9 pF
Insertion Power Gain |S21|
2
VCE = 3 V, IC = 7 mA, f = 1 GHz 10 12 dB
Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz 1.4 1.7 dB
hFE Ratio hFE1/hFE2 VCE = 3 V, IC = 7 mA 0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw ≤ 350 µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank FB GB
Marking R34 R35
hFE Value 70 to 150 110 to 240
TYPICAL CHARACTERISTICS (TA = 25 °C)
5
0
10
0.5
0.5 1.0
10
15
20
0 0.5 1.0
10
20
1 5 10 50
20
50
100
200
V
CE
= 3 V
VCE = 3 V
25
PT - TA Characteristics
100
0
50 100 150
200
Total Power Dissipation P
T
(mW)
Ambient Temperature TA (°C)
Free Air
2 Elements in Total
Per Element
Collector Current I
C
(mA)
Base to Emitter Voltage VBE (V)
I
C
- V
BE
Characteristics
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
Collector Current IC (mA)
DC Current Gain h
FE
hFE - IC Characteristics
IC - V
CE
Characteristics
160 A
µ
140 A
µ
120 A
µ
100 A
µ
80 A
µ
60
A
µ
40 A
µ
IB = 20 A
µ
Loading...