HP HMMC-5021DC, HMMC-5021RF, HMMC-5022DC, HMMC-5022RF, HMMC-5026DC Datasheet
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2– 26.5 GHz GaAs MMIC
Traveling Wave Amplifier
Technical Data
Features
•Wide-Frequency Range:
2 - 26.5 GHz
•High Gain: 9.5 dB
•Gain Flatness: 0.75 dB
•Return Loss:
Input: -14 dB Output: -13 dB
•Low-Frequency Operation Capability: < 2 GHz
•Gain Control:
35 dB Dynamic Range
•Moderate Power:
20GHz: P-1dB: 18 dBm
Psat: 20 dBm
26.5GHz: P-1dB: 15 dBm
Psat: 17 dBm
Description
The HMMC-5021/22/26 is a broadband GaAs MMIC Traveling Wave Amplifier designed for high gain and moderate output power over the full 2 to 26.5 GHz frequency range. Seven MESFET cascode stages provide a flat gain response, making the HMMC-5021/22/26 an ideal wideband gain block. Optical lithography is used to produce gate lengths of ≈ 0.4 μm. The HMMC-5021/22/26incorporates advanced MBE technology, Ti-Pt-Au gate metallization, silicon nitride passivation, and polyimide for scratch protection.
HMMC-5021 (2-22 GHz)
HMMC-5022 (2-22 GHZ)
HMMC-5026 (2-26.5 GHz)
Chip Size: |
2980 x 770 μm (117.3 x 30.3 mils) |
Chip Size Tolerance: |
± 10μm(± 0.4mils) |
Chip Thickness: |
127± 15 μm (5.0 ± 0.6 mils) |
Pad Dimensions: |
75 x 75 μm (2.95 x 2.95 mils), or larger |
Absolute Maximum Ratings
Symbol |
Parameters/Conditions |
Units |
Min. |
Max.[1] |
VDD |
Positive Drain Voltage |
V |
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8.0 |
IDD |
Total Drain Current |
mA |
|
250 |
VG1 |
First Gate Voltage |
V |
-5 |
0 |
IG1 |
First Gate Current |
mA |
-9 |
+5 |
V [2] |
Second Gate Voltage |
V |
-2.5 |
+3.5 |
G2 |
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IG2 |
Second Gate Current |
mA |
-7 |
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PDC |
DC Power Dissipation |
watts |
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2.0 |
Pin |
CW Input Power |
dBm |
|
23 |
Tch |
Operating Channel Temp. |
°C |
|
+150 |
Tcase |
Operating Case Temp. |
°C |
-55 |
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TSTG |
Storage Temperature |
°C |
-65 |
+165 |
Tmax |
Maximum Assembly Temp. |
°C |
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+300 |
(for 60 seconds maximum) |
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Notes:
1.Operation in excess of any one of these conditions may result in permanent damage to this device. TA = 25°C except for Tch, TSTG, and Tmax.
2.Minimum voltage on VG2 must not violate the following: VG2(min) > VDD - 9 volts.
5965-5449E |
6-28 |
HMMC-5021/22/26 DC Specifications/Physical Properties,[1] applies to all part numbers
Symbol |
Parameters and Test Conditions |
Units |
Min. |
Typ. |
Max. |
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IDSS |
Saturated Drain Current |
mA |
115 |
180 |
250 |
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(VDD = 7.0 V, VG1 = 0 V, VG2 = open circuit) |
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Vp |
First Gate Pinch-off Voltage |
V |
-3.5 |
-1.5 |
-0.5 |
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(VDD = 7.0 V, IDD = 16 mA, VG2 = open circuit) |
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VG2 |
Second Gate Self-Bias Voltage |
V |
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2.1 |
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(VDD = 7.0 V, VG1 = 0 V) |
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IDSOFF |
First Gate Pinch-off Current |
mA |
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4 |
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(VG1) |
(VDD = 7.0 V, VG1 = -3.5 V, VG2 = open circuit) |
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IDSOFF |
Second Gate Pinch-Off Current |
mA |
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8 |
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(VG2) |
(VDD = 5.0 V, VG1 = 0 V, VG2 = -3.5 V) |
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θch-bs |
Thermal Resistance |
°C/W |
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36 |
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(Tbackside = 25°C) |
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Note: |
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1. Measured in wafer form with Tchuck = 25°C. (Except qch-bs.) |
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HMMC-5021/22/26 RF Specifications, V |
DD |
= 7.0 V, I |
DD |
(Q) = 150 mA, Z |
in |
= Z |
o |
= 50 Ω[1] |
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2.0–22.0 GHz |
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2.0–26.5 GHz |
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Symbol |
Parameters/Conditions |
Units |
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HMMC-5021 |
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HMMC-5022 |
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HMMC-5026 |
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Typ. |
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Min. |
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Typ. |
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Max. |
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Min. |
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Typ. |
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Max. |
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BW |
Guaranteed Bandwidth |
GHz |
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2-22 |
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2 |
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22 |
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2 |
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26.5 |
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S21 |
Small Signal Gain |
dB |
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10 |
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8.0 |
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10 |
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12 |
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7.5 |
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9.5 |
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12 |
DS21 |
Small Signal Gain Flatness |
dB |
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± 0.5 |
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± 0.5 |
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± 1.0 |
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± 0.75 |
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± 1.0 |
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RLin(min) |
Minimum Input Return Loss |
dB |
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16 |
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10 |
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16 |
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10 |
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14 |
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RLout(min) |
Minimum Output Return Loss |
dB |
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13 |
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10 |
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13 |
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10 |
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13 |
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Isolation |
Minimum Reverse Isolation |
dB |
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32 |
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20 |
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32 |
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20 |
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30 |
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P-1dB |
Output Power at 1 dB Gain Comp. |
dBm |
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18 |
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15 |
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18 |
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12 |
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15 |
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Psat |
Saturated Output Power |
dBm |
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20 |
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17 |
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20 |
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14 |
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17 |
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Max. Second Harm. (2 <¦o<20), |
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H2(max) |
[Po(¦o) = 17 dBm or P-1dB, |
dBc |
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-25 |
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-25 |
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-20 |
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-25 |
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-20 |
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whichever is less.] |
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Max. Third Harm. (2 <¦o< 20), |
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H3(max) |
[Po(¦o) = 17 dBm or P-1dB, |
dBc |
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-34 |
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-34 |
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-20 |
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-34 |
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-20 |
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whichever is less.] |
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NF |
Noise Figure |
dB |
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8 |
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8 |
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10 |
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Notes:
1.Small-signal data measured in wafer form with Tchuck = 25°C. Large-signal data measured on individual devices mounted in an HP83040 Series Modular Microcircuit Package @ TA = 25°C.
2.Performance may be extended to lower frequencies through the use of appropriate off-chip circuitry. Upper -3 dB corner frequency » 29.5 GHz.
6-29
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