BB402M
Build in Biasing Circuit MOS FET IC
VHF RF Amplifier
Features
• Build in Biasing Circuit; To reduce using parts cost & PC board space.
• Low noise characteristics;
(NF = 1.7 dB typ. at f = 200 MHz)
• Withstanding to ESD;
Build in ESD absorbing diode. Withstand up to 240V at C=200pF, Rs=0 conditions.
• Provide mini mold packages; MPAK-4R(SOT-143 var.)
ADE-208-716A (Z)
2nd. Edition
Dec. 1998
Outline
Notes: 1. Marking is “BX–”.
2. BB402M is individual type number of HITACHI BBFET.
MPAK-4R
3
4
2
1
1. Source
2. Drain
3. Gate2
4. Gate1
BB402M
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
Gate1 to source voltage V
Gate2 to source voltage V
Drain current I
DS
G1S
G2S
D
Channel power dissipation Pch 150 mW
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Drain to source breakdown voltage V
Gate1 to source breakdown voltage V
Gate2 to source breakdown voltage V
Gate1 to source cutoff current I
Gate2 to source cutoff current I
Gate1 to source cutoff voltage V
Gate2 to source cutoff voltage V
Drain current I
(BR)DSS
(BR)G1SS
(BR)G2SS
G1SS
G2SS
G1S(off)
G2S(off)
D(op)
Forward transfer admittance |yfs| 1520—mSVDS = 9V, VG1 = 9V, V
Input capacitance c
Output capacitance c
Reverse transfer capacitance c
iss
oss
rss
Power gain PG 22 26 — dB VDS = 9V, VG1 = 9V, V
Noise figure NF — 1.7 2.2 dB RG = 120kΩ, f = 200MHz
12——V I
+10 — — V IG1 = +10µA, V
±10——V IG2 = ±10µA, V
— — +100 nA V
——±100 nA V
0.4 0.7 1.0 V VDS = 9V, V
0.4 0.7 1.0 V VDS = 9V, V
9 1318mAVDS = 9V, VG1 = 9V, V
2.2 3.0 4.0 pF VDS = 9V, VG1 = 9V
0.8 1.1 1.5 pF V
— 0.017 0.04 pF f = 1MHz
12 V
+10
V
– 0
±10 V
25 mA
= 200µA, V
D
= +9V, V
G1S
= ±9V, V
G2S
R
= 120kΩ
G
R
= 120kΩ, f = 1kHz
G
=6V, RG = 120kΩ
G2S
= V
G1S
G2S
= VDS = 0
G2S
= VDS = 0
G1S
= VDS = 0
G2S
= VDS = 0
G1S
= 6V, ID = 100µA
G2S
= 9V, ID = 100µA
G1S
G2S
G2S
G2S
= 0
= 6V
=6V
=6V
2
Main Characteristics
BB402M
Test Circuit for Operating Items (I , |yfs|, Ciss, Coss, Crss, NF, PG)
V
1000p
G1
V
T
R
G
Gate 1
Source
Power Gain, Noise Figure Test Circuit
V
G2
1000p
D(op)
Gate 2
V
G2
Drain
A
I
D
V
T
1000p
Input (50Ω)
1000p
36p
BBFET
L2
120k
1000p
47k
R
G
1000p
47k
L1
1SV70
L1: φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
L2: φ1mm Enameled Copper Wire,Inside dia 10mm, 2Turns
RFC: φ1mm Enameled Copper Wire,Inside dia 5mm, 2Turns
1000p
V = V
1000p
RFC
D G1
47k
10p max
1SV70
Unit Resistance (Ω)
Capacitance (F)
Output (50Ω)
3
BB402M
Maximum Channel Power
200
150
100
50
Channel Power Dissipation Pch (mW)
0
Dissipation Curve
50 100 150 200
Ambient Temperature Ta (¡C)
25
Typical Output Characteristics
V = 6 V
G2S
V = V
G1 DS
20
D
15
10
Drain Current I (mA)
5
0
246810
Drain to Source Voltage V (V)
Ω
Ω
56 k
68 k
82 k
100 k
120 k
150 k
180 k
220 k
G
R = 270 k
DS
Ω
Ω
Ω
Ω
Ω
Ω
Ω
Drain Current vs.
Gate2 to Source Voltage
25
Ω
20
D
56 k
15
10
Drain Current I (mA)
5
0
1.2 2.4 3.8 4.8 6.0
R = 220 k
V = V = 9 V
DS
Gate2 to Source Voltage V (V)
G
68 k
82 k
100 k
120 k
150 k
180 k
200 k
G1
Ω
Ω
Ω
Ω
Ω
G2S
Drain Current vs. Gate1 Voltage
20
V = 9 V
16
DS
R = 100 k
G
Ω
6 V
5 V
4 V
D
12
3 V
2 V
Ω
8
Ω
Drain Current I (mA)
Ω
4
0
246810
Gate1 Voltage V (V)
V = 1 V
G2S
G1
4