Datasheet STTH30R03CG, STTH30R03CW Datasheet (SGS Thomson Microelectronics)

Page 1
®
HIGH FREQUENCY SECONDARY RECTIFIER
MAJOR PRODUCT CHARACTERISTICS
STTH30R03CW/CG
I
F(AV)
V
RRM
(typ.) 4.5A
I
RM
2x15A
300 V
Tj (max) 175 °C
(max) 1.4 V
V
F
trr (max) 35 ns
FEATURES AND BENEFITS
Designed for high frequency applications.
Hyperfast recovery competes with GaAs devices.
Allowssizedecreaseofsnubbers and heatsinks.
DESCRIPTION
The TURBOSWITCH "R" is an ultra high performance diode. This TURBOSWITCH family, which drastically cuts losses in associated MOSFET when run at high dI
/dt, is suited for HF OFF-Line SMPS and
F
DC/DC converters.
ABSOLUTE RATINGS (limiting values, per diode)
A2
K
A1
TO-247
STTH30R03CW
K
A2
A1
D2PAK
STTH30R03CG
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T
stg
Tj
July 2002 - Ed: 1C
Repetitive peak reverse voltage RMS forward current Average forward current Tc = 120°C
Surge non repetitive forward current tp = 10 ms sinusoidal Storage temperature range Maximum operating junction temperature
δ = 0.5
Per diode Per device
300 V
30 A 15
30
120 A
- 65 + 175 °C + 175 °C
A
1/6
Page 2
STTH30R03CW/CG
THERMAL AND POWER DATA
Symbol Parameter Value Unit
R
th (j-c)
Junction to case Per diode
Total
R
th (c)
Coupling
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Tests conditions Min. Typ. Max. Unit
2.0 °C/W
1.2
0.4
*
I
R
Reverse leakage
V
R=VRRM
current
V
**
F
Forward voltage drop I
= 15 A Tj = 25°C
F
Tj = 25°C Tj = 125°C
Tj = 125°C
30 200
1.1 1.4
20 µA
1.9 V
Pulse test : * tp=5ms,δ<2%
** tp = 380 µs, δ<2%
To evaluate the maximum conduction lossesuse thefollowing equation: P=1xI
F(AV)
+ 0.026 I
F2(RMS)
RECOVERY CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
20 ns
35
4.5 6 A
I
trr
RM
= 0.5 A Irr =0.25 A IR= 1A Tj =25°C
I
F
I
=1A dIF/dt=-50A/µsVR= 30V
F
VR= 200 V IF= 15A dIF/dt = - 200A/µs Tj = 125°C
S factor 0.4
TURN-ON SWITCHING CHARACTERISTICS
Symbol Tests conditions Min. Typ. Max. Unit
t
fr
Tj = 25°C IF= 15A dIF/dt = 100A/µs
300 ns
measured at 1.1xVFmax
2/5
V
FP
Tj = 25°C IF= 15A dIF/dt = 100A/µs
3.5 V
Page 3
STTH30R03CW/CG
Fig.1: Conductionlosses versusaverage current
P(W)
30
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
25 20
δ = 1
15 10
5 0
02468101214161820
IF(av) (A)
δ
=tp/T
T
tp
Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration.
Zth(j-c)/Rth(j-c)
1.0
0.8
δ = 0.5
0.6
δ = 0.2
0.4
δ = 0.1
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0
tp(s)
δ
=tp/T
T
tp
Fig. 2: Forward voltage drop versus forward current.
IFM(A)
200 100
Tj=125°C
Typical values
Tj=125°C
Maximum values
Tj=25°C
Maximum values
10
VFM(V)
1
011223344
Fig. 4: Peak reverse recovery current versus
/dt (90% confidence).
dI
F
IRM(A)
12
VR=200V Tj=125°C
10
8 6 4 2 0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF= 2 x IF(av)
IF=IF(av)
IF= 0.5 x IF(av)
Fig. 5: Reverse recovery time versus dIF/dt (90% confidence).
trr(ns)
80 70 60 50 40
IF=2 x IF(av)
IF=IF(av)
30 20 10
0
0 50 100 150 200 250 300 350 400 450 500
IF=0.5 x IF(av)
dIF/dt(A/µs)
VR=200V Tj=125°C
Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence).
Qrr(nC)
150
VR=200V Tj=125°C
125 100
75 50 25
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF=2 x IF(av)
IF=IF(av)
IF=0.5 x IF(av)
3/6
Page 4
STTH30R03CW/CG
Fig. 7: Softness factor (tb/ta) versus dIF/dt
(typical values).
S factor
0.6
0.5
0.4
0.3
0.2
0.1
0.0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
IF < 2 x IF(av)
VR=200V Tj=125°C
Fig. 9: Transient peak forward voltage versus
/dt (90% confidence).
dI
F
VFP(V)
20
IF=IF(av)
18
Tj=125°C
16 14 12 10
8 6 4 2 0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
Fig. 8: Relative variation of dynamic
parameters versus junction temperature (Reference: Tj=125°C).
2.6
2.4
2.2
2.0
S factor
1.8
1.6
1.4
1.2
1.0
0.8
0.6
IRM
0.4
0.2
0.0 25 50 75 100 125
Tj(°C)
Fig. 10: Forward recovery time versus dIF/dt
(90% confidence).
tfr(ns)
500 450 400 350 300 250 200 150 100
50
0
0 50 100 150 200 250 300 350 400 450 500
dIF/dt(A/µs)
VFR=1.1 x VF max.
IF=IF(av) Tj=125°C
4/6
Page 5
PACKAGE MECHANICAL DATA
2
PAK
D
STTH30R03CW/CG
L2
L
L3
FOOTPRINT
A
E
C2
REF.
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
A1 2.49 2.69 0.098 0.106
DIMENSIONS
D
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
B2 1.14 1.70 0.045 0.067
A1
B2 B
G
C
A2
R
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624 L2 1.27 1.40 0.050 0.055 L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
M
*
V2
* FLAT ZONE NO LESSTHAN 2mm
R 0.40 typ. 0.016 typ.
V2
10.30
16.90
5.08
1.30
3.70
8.90
5/6
Page 6
STTH30R03CW/CG
PACKAGE MECHANICAL DATA
TO-247
DIMENSIONS
V
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
V
Dia.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031
H
A
F 1.00 1.40 0.039 0.055 F1 3.00 0.118 F2 2.00 0.078
L5
L
F3 2.00 2.40 0.078 0.094 F4 3.00 3.40 0.118 0.133
G 10.90 0.429 H 15.45 15.75 0.608 0.620
F1
V2
F(x3)
G
= =
F4
F3
F2
L1
L3
L4L2
D
ME
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169 L2 18.50 0.728 L3 14.20 14.80 0.559 0.582 L4 34.60 1.362 L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5° V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Ordering code Marking Package Weight Base qty Delivery mode
STTH30R03CW STTH30R03CW TO-247 4.36g 30 Tube STTH30R03CG STTH30R03CG D
STTH30R03CG-TR STTH30R03CG D
Cooling method: by conduction(C)
Recommended torque value: 0.8N.m.
Maximum torque value: 1 N.m.
Epoxy meets UL 94,V0
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© 2002 STMicroelectronics - Printed in Italy - All rights reserved.
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6/6
2
PAK 1.48g 50 Tube
2
PAK 1.48g 1000 Tape& Reel
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