The STTH302 which is using ST's new 200V
planar technology, is specially suited for switching
mode base drive & transistor circuits.
The device is also intended for use as a free
wheeling diode in power supplies and other power
switching applications.
ABSOLUTE RATINGS (limiting values)
DO-201AD
STTH302
SymbolParameterValueUnit
V
RRM
I
F (AV)
I
FSM
T
stg
Tj
Repetitive peak reverse voltage
Average forward currentTI = 107°Cδ = 0.5
Surge non repetitive forward currenttp= 10msSinusoidal
Storage temperature range
Maximum operating junction temperature
200V
3A
130A
-65to+175°C
175°C
THERMAL PARAMETERS
SymbolParameterValueUnit
Rth (j-a)
* Oninfiniteheatsink with 10mm lead length.
November 2001 - Ed: 1A
Junction-ambient*
25°C/W
1/5
Page 2
STTH302
STATIC ELECTRICAL CHARACTERISTICS
SymbolParameterTest ConditionsMin.Typ.Max.Unit
*
I
R
V
F
Pulse test:*tp=5ms,δ<2%
Reverse leakage currentT
**
Forward voltage dropT
** tp = 380 µs, δ <2%
= 25°CVR=V
j
= 125°C
T
j
= 25°CIF=3A
j
T
= 125°C
j
RRM
475
0.660.75
3µA
0.95V
To evaluate the maximum conduction losses use the following equations:
P=0.60xI
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