Datasheet STTH302 Datasheet (SGS Thomson Microelectronics)

Page 1
®
HIGH EFFICIENCY ULTRAFAST DIODE
MAIN PRODUCT CHARACTERISTICS
STTH302
I
F(AV)
V
RRM
3A
200 V
Tj (max) 175 °C
(max) 0.75 V
V
F
trr (max) 35 ns
FEATURES AND BENEFITS
Negligible switching losses
Low forward and reverse recovery times
High junction temperature
DESCRIPTION
The STTH302 which is using ST's new 200V planar technology, is specially suited for switching mode base drive & transistor circuits.
The device is also intended for use as a free wheeling diode in power supplies and other power switching applications.
ABSOLUTE RATINGS (limiting values)
DO-201AD
STTH302
Symbol Parameter Value Unit
V
RRM
I
F (AV)
I
FSM
T
stg
Tj
Repetitive peak reverse voltage Average forward current TI = 107°C δ = 0.5 Surge non repetitive forward current tp= 10ms Sinusoidal Storage temperature range Maximum operating junction temperature
200 V
3A
130 A
-65to+175 °C 175 °C
THERMAL PARAMETERS
Symbol Parameter Value Unit
Rth (j-a)
* Oninfiniteheatsink with 10mm lead length.
November 2001 - Ed: 1A
Junction-ambient*
25 °C/W
1/5
Page 2
STTH302
STATIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test Conditions Min. Typ. Max. Unit
*
I
R
V
F
Pulse test:*tp=5ms,δ<2%
Reverse leakage current T
**
Forward voltage drop T
** tp = 380 µs, δ <2%
= 25°C VR=V
j
= 125°C
T
j
= 25°C IF=3A
j
T
= 125°C
j
RRM
475
0.66 0.75
3 µA
0.95 V
To evaluate the maximum conduction losses use the following equations: P=0.60xI
F(AV)
+ 0.05 I
F2(RMS)
DYNAMIC ELECTRICAL CHARACTERISTICS
Symbol Parameter Test conditions Min. Typ. Max. Unit
trr Reverse recovery
time
tfr Forward recovery
time
V
FP
Forward recovery
voltage
=1A dIF/dt = - 50A/µs
I
F
VR= 30V I
=3A dIF/dt = 50A/µs
F
VFR=1.1xVFmax
Tj= 25°C
Tj= 25°C
= 25°C
T
j
70 ns
1.6 V
35 ns
2/5
Page 3
STTH302
Fig. 1: Average forward power dissipation versus
average forward current.
PF(av)(W)
3.0
δ = 0.05
2.5
2.0
1.5
1.0
0.5
0.0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
δ = 0.1
IF(av)(A)
δ = 0.2
δ = 0.5
=tp/T
δ
δ = 1
T
tp
Fig. 3: Thermal resistance versus lead length.
Rth(°C/W)
90 80 70 60 50 40 30 20 10
0
5 10152025
Rth(j-a)
Rth(j-l)
Lleads(mm)
Fig. 2: Average forward current versus ambient
temperature (δ=0.5).
IF(av)(A)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0 0 25 50 75 100 125 150 175
Rth(j-a)=Rth(j-l)
Rth(j-a)=75°C/W
Tamb(°C)
Fig. 4: Relative variation of thermal impedance
junction ambient versus pulse duration (printed circuit board epoxy FR4, LIeads = 10mm).
Zth(j-a)/Rth(j-a)
1.0
0.9
0.8
0.7
0.6
δ = 0.5
0.5
0.4
0.3
δ = 0.2
0.2
δ = 0.1
0.1
Single pulse
0.0
1.E-01 1.E+00 1.E+01 1.E+02 1.E+03
tp(s)
δ
=tp/T
T
tp
Fig. 5: Forward voltage drop versus forward current.
IFM(A)
100.0
Tj=125°C
Tj=125°C
(Maximum values)
(Maximum values)
10.0
1.0
0.1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
Tj=125°C
Tj=125°C
(Typical values)
(Typical values)
VFM(V)
Tj=25°C
(Maximum values)
Fig. 6: Junction capacitance versus reverse voltage applied (typical values).
C(pF)
100
VR(V)
10
1 10 100 1000
F=1MHz
Vosc=30mV
Tj=25°C
3/5
Page 4
STTH302
Fig. 7: Reverse recovery time versus dIF/dt (90%
confidence).
trr(ns)
100
90 80 70 60 50 40 30 20 10
0
1 10 100 1000
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
IF=3A VR=100V Tj=125°C
Fig. 9: Relative variations of dynamic parameters versus junction temperature.
IRM; trr; Qrr[Tj]/IRM; trr; Qrr[Tj=25°C]
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
IF=3A
dIF/dt=200A/µs
VR=100V
Qrr
IRM
Tj(°C)
25 50 75 100 125 150 175
trr
Fig. 8:Peak reverse recovery currentversusdIF/dt (90% confidence).
IRM(A)
6
IF=3A VR=100V Tj=125°C
5
4
3
2
1
0
1 10 100 1000
Tj=125°C
Tj=25°C
dIF/dt(A/µs)
4/5
Page 5
PACKAGE MECHANICAL DATA
DO-201AD
STTH302
BA
note 1
ØD ØD
DIMENSIONS
REF.
Min. Max. Min. Max.
A 9.50 0.374 B 25.40 1.000
C 5.30 0.209D 1.30 0.051
E 1.25 0.049
E
note 2
B
note 1
E
ØC
NOTESMillimeters Inches
1 - The lead diameter D is not controlled over zone E 2 - The minimum axial length within which the device may be
placed with its leads bent at right angles is 0.59"(15 mm)
Ordering code Marking Package Weight Base qty Delivery mode
STTH302 STTH302 DO-201AD 1.16 g 600 Ammopack
STTH302RL STTH302 DO-201AD 1.16 g 1900 Tape and reel
White band indicates cathode
Epoxy meets UL94,V0
Informationfurnished is believedto be accurate andreliable. However, STMicroelectronicsassumesno responsibility forthe consequences of useof such informationnor for anyinfringement of patentsor other rights ofthird parties whichmay result fromits use. Nolicenseis granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written ap­proval of STMicroelectronics.
The ST logo is a registered trademark of STMicroelectronics
© 2001 STMicroelectronics - Printed in Italy - All rights reserved.
STMicroelectronics GROUP OF COMPANIES
Australia - Brazil - Canada - China - Finland - France - Germany
Hong Kong - India - Israel - Italy - Japan - Malaysia -Malta - Morocco - Singapore
Spain - Sweden - Switzerland - United Kingdom - United States.
http://www.st.com
5/5
Loading...