Datasheet STTH3003CW Datasheet (SGS Thomson Microelectronics)

®

HIGH FREQUENCY SECONDARY RECTIFIER

MAJOR PRODUCT CHARACTE RISTICS

STTH3003CW

I

F(AV)

V

RRM

2 x 15 A

300 V

Tj (max) 175 °C

(max) 1 V

V

F

trr (max) 40 ns

FEATURES AND BENE FITS

COMBINES HIGHEST RECOVERY AND
REVERSE VOLTAGE PERFORMANCE

ULTRA-FAST, SOFT AND NOISE-FREE
RECOVERY

DESCRIPTION

Dual center tap Fast Recovery Epitaxial Diodes
suited for Switch Mode Power Supply and high
frequency DC to DC converters.

Packaged in TO-247 this device is intended for
secondary rectification.

ABSOLUTE RATINGS (limiting values, per diode)

A2

K

A1

TO-247

Symbol Parameter Value Unit

V

RRM

I

F(RMS)

I

F(AV)

I

FSM

I

RSM

T

stg

Tj

October 1999 - Ed: 5A

Repetitive peak reverse voltage
RMS forward current
Average forward current Tc = 135°C

Surge non repetitive forward current tp = 10 ms sinusoidal
Non repetitive peak reverse current tp = 20 µs square
Storage temperature range
Maximum operating junction temperature

δ = 0.5

Per diode
Per device

300 V

30 A
15

30

140 A

7A

-65 +175 °C
+175 ° C

A

1/5

STTH3003CW

THERMA L RE SISTA NC ES

Symbol Parameter Value Unit

R

th (j-c)

Junction to case Per diode

Total

R

th (c)

Coupling

STATIC ELECTRICAL CHARACTERISTICS (per diode)

Symbol Parameter Tests conditions Min. Typ. Max. Unit

2.0 °C/W

1.05

0.1

*

I

R

V

F

Reverse leakage
current

**

Forward voltage drop I

V

= 300 V Tj = 25°C

R

Tj = 125°C

= 15 A Tj = 25°C

F

Tj = 125°C

40 400

0.85 1

40 µA

1.25 V

Puls e tes t : * tp = 5 m s, δ < 2 %
** tp = 380 µs, δ < 2%

To evaluate the maximum conduction losses use the following equation :
P = 0.75 x I

F(AV)

+ 0.017 I

F2(RMS)

RECOVERY CH ARACTE RIST ICS

Symbol Tests conditions Min. Typ. Max. Unit

trr

= 0.5 A Irr = 0.25 A IR = 1A Tj = 25°C

I

F

IF = 1 A dIF/dt = - 50 A/µ s VR = 30V

tfr

V

FP

I

= 15 A dIF/dt = 100 A/µs

F

V

= 1.1 x VF max.

FR

Tj = 25°C

30 ns
40

300 ns

3.5 V

2/5

S

factor

I

RM

Vcc = 200 V IF = 15 A
dI

/dt = 200A/µs

F

Tj = 125°C

0.3 -

8.5 A

STTH3003CW

Fig. 1: Conduction losses versus average current

(per diode).

P1(W)

20
18
16
14

δ = 0.05

δ = 0.1

δ = 0.2

δ = 0.5

δ = 1

12
10

8
6

T

4
2
0

02468101214161820

IF(av) (A)

δ

=tp/T

tp

Fig. 3: Relative variation of thermal impedance
junction to case versus pulse duration.

Zth(j-c)/Rth(j-c)

1.0

0.8

δ = 0.5

0.6

δ = 0.2

0.4

δ = 0.1

0.2

Single pulse

tp(s)

0.0
1E-3 1E-2 1E-1 1E+0

δ

=tp/T

T

tp

Fig. 2: Forward voltage drop versus forward
current (maximum values, per diode).

IFM(A)

200
100

Tj=125°C

10

Tj=25°C

Tj=75°C

VFM(V)

1

0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50

Fig. 4: Peak reverse recovery current versus
dI

/dt (90% confidence, per diode).

F

IRM(A)

16

VR=200V

14

Tj=125°C

12

IF=IF(av)

10

8
6
4
2
0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

IF=2*IF(av)

IF=0.5*IF(av)

Fig. 5: Reverse recovery time ver sus dI

F

confidence, per diode).

trr(ns)

100

80

60

IF=2*IF(av)

40

20

IF=0.5*IF(av)

dIF/dt(A/µs)

0

0 50 100 150 200 250 300 350 400 450 500

VR=200V
Tj=125°C

IF=IF(av)

/dt (90%

Fig. 6: Softness factor versus dI

/dt (typical

F

values, per diode).

S factor

0.60

0.50

0.40

0.30

0.20

0.10

0.00
0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

VR=200V
Tj=125°C

3/5

STTH3003CW

Fig. 7: Re lative variati on of dynamic par ameters

versus junction temperature (reference: Tj = 125°C).

2.6

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
25 50 75 100 125

Fig. 9: Forward recovery time versus dI

IRM

S factor

Tj(°C)

/dt (90%

F

confidence, per diode).

tfr(ns)

500
450
400
350
300
250
200
150
100

50

0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

VFR=1.1*VF max.
IF=IF(av)
Tj=125°C

Fig. 8: Transient peak forward voltage versus
dI

/dt (90% confidence, per diode).

F

VFP(V)

8

IF=IF(av)

7

Tj=125°C

6
5
4
3
2
1
0

0 50 100 150 200 250 300 350 400 450 500

dIF/dt(A/µs)

4/5

PACKAGE MECHANICAL DAT A

TO-247

V

V

H

L5

L

F2

F4

L1

F3

L3

F1

V2

F(x3)

G

= =

Dia.

L4L2

D

ME

A

STTH3003CW

DIMENSIONS

REF.

A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
E 0.40 0.80 0.015 0.031

F 1.00 1.40 0.039 0.055
F1 3.00 0.118
F2 2.00 0.078
F3 2.00 2.40 0.078 0.094
F4 3.00 3.40 0.118 0.133

G 10.90 0.429

H 15.45 15.75 0.608 0.620

L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216

M 2.00 3.00 0.078 0.118

V5° 5°

V2 60° 60°

Dia. 3.55 3.65 0.139 0.143

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

Ordering code Marking Package Weight Base qty Delivery mode

STTH3003CW STTH3003CW TO-247 4.36g 30 Tube

Cooling method: by conduction (C)
Recommended torque value: 0.8 N.m.
Maximum torque value: 1.0 N.m.
Epoxy meets UL 94,V0

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