Datasheet STTH3002 Datasheet (ST)

Page 1
Main product characteristics

STTH3002

Ultrafast recovery diode

I
F(AV)
V
RRM
T
(max) 175° C
j
V
(typ) 0.77 V
F
(typ) 22 ns
t
rr
30 A
200 V
Features and benefits
Very low conduction losses
Negligible switching losses
Low forward and reverse recovery time
Description
The STTH3002 uses ST's new 200 V planar Pt doping technology, and is specially suited for switching mode base drive and transistor circuits.
Packaged in DO-247, DOP3I, and D²PAK, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection.
A
A
K
DO-247
STTH3002W
K
NC
2
DPAK
STTH3002G
K
A
K
DOP3I
STTH3002PI
A
Order codes
Part Number Marking
STTH3002W STTH3002
STTH3002PI STTH3002
STTH3002G STTH3002
STTH3002G-TR STTH3002
May 2006 Rev 1 1/10
www.st.com
Page 2
Characteristics STTH3002

1 Characteristics

Table 1. Absolute ratings (limiting values at T
= 25° C, unless otherwise specified)
j
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
F(AV)
I
FSM
T

Table 2. Thermal parameters

Repetitive peak reverse voltage 200 V
RMS forward current 50 A
= 135° C
c
= 115° C
c
Average forward current, δ = 0.5
DO-247 T
2
D
PAK Tc = 135° C
Surge non repetitive forward current tp = 10 ms Sinusoidal 300 A
Storage temperature range -65 to + 175 ° C
stg
T
Maximum operating junction temperature 175 ° C
j
30 ADOP3I T
Symbol Parameter Value Unit
DO-247 1.2
R
th(j-c)
Junction to case
D2PA K 1 .2

Table 3. Static electrical characteristics

° C/WDOP3I 1.8
Symbol Parameter Test conditions Min. Typ Max. Unit
(1)
I
R
V
1. Pulse test: tp = 5 ms, δ < 2 %
2. Pulse test: t
Reverse leakage current
(2)
Forward voltage drop
F
= 380 µs, δ < 2 %
p
= 25° C
j
Tj = 150° C 20 200
= 125° C IF = 25 A 0.77 0.85
T
j
= 25° C
j
T
= 150° C 0.8 0.88
j
= V
V
R
= 30 A
I
F
RRM
20
1.05
T
To evaluate the conduction losses use the following equation: P = 0.67 x I
F(AV)
+ 0.007 I
F2(RMS)
µA
VT
2/10
Page 3
STTH3002 Characteristics

Table 4. Dynamic characteristics

Symbol Parameter
t
rr
I
RM
t
fr
V
FP
Reverse recovery time
Reverse recovery current
Forward recovery time
Forward recovery voltage
Test conditions
IF = 1 A, dIF/dt = -200 A/µs, V
= 30 V, Tj = 25 °C
R
= 1 A, dIF/dt = -50 A/µs,
I
F
= 30 V, Tj = 25 °C
V
R
= 30 A, dIF/dt = 200 A/µs,
I
F
= 160 V, Tj = 125 °C
V
R
IF = 30 A, dIF/dt = 200 A/µs V
= 1.1 x V
FR
, Tj = 25 °C
Fmax
IF = 30 A, dIF/dt = 200 A/µs, VFR = 1.1 x V
, Tj = 25 °C
Fmax
Min. Typ Max. Unit
22 27
40 50
7.6 9.5 A
140 ns
2.5 V
Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus
forward current (typical values)
IM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
P = 20 WP = 20 W
P = 10 WP = 10 W
P = 5 WP = 5 W
δ
T
T
I
I
M
M
=tp/T
=tp/T
d
δ
tp
tp
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.4 0.8 1.2 1.6 2.0
Tj=150 °C
Tj=25 °C
VFM(V)
ns
Figure 3. Forward voltage drop versus
forward current (maximum values)
IFM(A)
200
180
160
140
120
100
80
60
40
20
0
0.0 0.4 0.8 1.2 1.6 2.0
Tj=150 °C
Tj=25 °C
VFM(V)
Figure 4. Relative variation of thermal
impedance, junction to case, versus pulse duration
Z
th(j-c)/Rth(j-c)
1.0
Single pulse
D²PAK
0.1
1.E-03 1.E-02 1.E-01 1.E+00
3/10
tp(s)
Page 4
Characteristics STTH3002
Figure 5. Junction capacitance versus
reverse voltage applied (typical values)
C(pF)
1000
100
1 10 100 1000
V
osc
F=1 MHz
=30 mV
Tj=25 °C
VR(V)
RMS
Figure 7. Reverse recovery time versus
dI
/dt (typical values)
F
tRR(ns)
80
70
60
50
40
30
20
10
0
10 100 1000
Tj= 125 °C
Tj= 25 °C
IF=30 A
V
=160 V
R
dIF/dt(A/µs)
Figure 6. Reverse recovery charges versus
dI
/dt (typical values)
F
QRR(nC)
350
IF= 30 A
= 160 V
V
R
300
250
200
150
100
50
0
10 100 1000
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
Figure 8. Peak reverse recovery current
versus dIF/dt (typical values)
IRM(A)
16
IF= 30 A
V
= 160 V
R
14
12
10
8
6
4
2
0
10 100 1000
Tj=125 °C
Tj=25 °C
dIF/dt(A/µs)
Figure 9. Dynamic parameters versus
junction temperature
QRR;IRM[Tj]/QRR;IRM[Tj=125°C]
1.4
IF=30 A
= 160 V
V
R
1.2
1.0
I
0.8
0.6
0.4
0.2
0.0
25 50 75 100 125 150
4/10
RM
Q
RR
Tj(°C)
Figure 10. Thermal resistance, junction to
ambient, versus copper surface under tab (Epoxy printed circuit board FR4, e
R
(°C/W)
th(j-a)
80
70
60
50
40
30
20
10
0
0 5 10 15 20 25 30 35 40
= 35 µm)
cu
SCU(cm²)
D²PAK
Page 5
STTH3002 Ordering information scheme

2 Ordering information scheme

STTH 30 02 XXX
Ultrafast switching diode
Average forward current
30 = 30 A
Repetitive peak reverse voltage
02 = 200 V
Package
W = DO-247 in Tube PI = DOP3I in Tube
2
G = D PAK in Tube G-TR =
2
D PAK in Tape and reel
5/10
Page 6
Package information STTH3002

3 Package information

Epoxy meets UL94, V0
Cooling method: by conduction (C)
Recommended torque value: 0.8 Nm
Maximum torque value: 1.0 Nm

Table 5. DO-247 dimensions

DIMENSIONS
REF.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 4.85 5.15 0.191 0.203
D 2.20 2.60 0.086 0.102
V
E 0.40 0.80 0.015 0.031
V
Dia
F 1.00 1.40 0.039 0.055
F2 2.00 0.078
H
L5
L
L2
F2
L1
L3
V2
F3
F
G
A
L4
D
ME
F3 2.00 2.40 0.078 0.094
G 10.90 0.429
H 15.45 15.75 0.608 0.620
L 19.85 20.15 0.781 0.793
L1 3.70 4.30 0.145 0.169
L2 18.50 0.728
L3 14.20 14.80 0.559 0.582
L4 34.60 1.362
L5 5.50 0.216
M 2.00 3.00 0.078 0.118
V5° 5°
6/10
V2 60° 60°
Dia. 3.55 3.65 0.139 0.143
Page 7
STTH3002 Package information

Table 6. DOP3I dimensions

DIMENSIONS
REF
E
E1
R
ØP
A
c
Millimeters Inches
Min. Max. Min. Max.
A 4.40 4.60 0.173 0.181
b 1.20 1.40 0.047 0.055
c 1.45 1.55 0.057 0.061
G
D
Y
c1 0.50 0.70 0.020 0.028
D 12.15 13.10 0.474 0.516
E 15.10 15.50 0.594 0.610
E1 7.55 7.75 0.297 0.305
L
e 10.80 11.30 0.425 0.445
G 20.4 21.10 0.815 0.831
b
e
c1
Q
L 14.35 15.60 0.565 0.614
P 4.08 4.17 0.161 0.164
Q 2.70 2.90 0.106 0.114
R 4.60 typ. 0.181 typ.
Y 15.80 16.50 0.622 0.650
7/10
Page 8
Package information STTH3002
Table 7 . D
L2
L
L3
2
PAK dimensions
E
A1
B2
B
G
2mm min. FLAT ZONE
DIMENSIONS
REF.
Millimeters Inches
Min. Max Min. Max.
A 4.40 4.60 0.173 0.181
A
C2
A1 2.49 2.69 0.098 0.106
A2 0.03 0.23 0.001 0.009
B 0.70 0.93 0.027 0.037
D
B2 1.14 1.70 0.045 0.067
C 0.45 0.60 0.017 0.024
C2 1.23 1.36 0.048 0.054
C
R
D 8.95 9.35 0.352 0.368
E 10.00 10.40 0.393 0.409
A2
G 4.88 5.28 0.192 0.208
L 15.00 15.85 0.590 0.624
V2
L2 1.27 1.40 0.050 0.055
L3 1.40 1.75 0.055 0.069
M 2.40 3.20 0.094 0.126
R 0.40 typ. 0.016 typ.
V2

Figure 11. D2PAK footprint (dimensions in mm)

16.90
10.30
8.90
3.70
5.08
1.30
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
8/10
Page 9
STTH3002 Ordering information

4 Ordering information

Part Number Marking Package Weight Base qty Delivery mode
STTH3002W STTH3002 DO-247 4.4 g 30 Tube
STTH3002PI STTH3002 DOP3I 4.46 g 30 Tube
STTH3002G STTH3002 D
2
PAK 1.48 g 50 Tube
STTH3002G-TR STTH3002 D2PAK 1.48 g 1000 Tape and reel

5 Revision history

Date Revision Description of Changes
03-May-2006 1 First issue
9/10
Page 10
STTH3002
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no
liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this
document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products
or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such
third party products or services or any intellectual property contained therein.
time, without notice.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED
WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED
WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS
OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZE REPRESENTATIVE OF ST, ST PRODUCTS ARE NOT DESIGNED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS,
NOR IN PRODUCTS OR SYSTEMS, WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void
any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE.
liability of ST.
© 2006 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
10/10
Loading...