Datasheet STTH2R02-Y Datasheet (ST)

Features

■ very low conduction losses

■ negligible switching losses

■ low forward and reverse recovery times

■ high junction temperature

■ AEC-Q101 qualified

STTH2R02-Y

Automotive ultrafast recovery diode

KA

A

Description

The STTH2R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.

Packaged in SMB, this device is intended for use
in low voltage, high frequency inverters, free
wheeling and polarity protection for automotive
applications.

K

SMB

STTH2R02UY

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 175 °C

j

(typ) 0.7 V

V

F

(typ) 15 ns

t

rr

2 A

200 V

October 2010 Doc ID 17934 Rev 1 1/8

www.st.com

8

Characteristics STTH2R02-Y

1 Characteristics

Table 2. Absolute ratings (limiting values at T

Symbol Parameter Value Unit

= 25 °C, unless otherwise specified)

j

V

RRM

I

FRM

I

F(RMS)

I

F(AV)

I

FSM

T

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 200 V

= 5 µs, F = 5 kHz

Repetitive peak forward current

t

p

Forward rms current 60 A

Average forward current, δ = 0.5 Tc = 90 °C 2 A

= 10 ms Sinusoidal

Surge non repetitive forward current

Storage temperature range -65 to +175 °C

stg

Operating junction temperature range -40 to +175 °C

j

t

p

60 A

75 A

Symbol Parameter Value Unit

R

th(j-c)

Table 4. Static electrical characteristics

Junction to case 30 °C/W

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

(1)

I

R

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Reverse leakage current

(2)

Forward voltage drop

F

= 25 °C

j

= 125 °C - 2 20

T

j

= 25 °C IF = 6 A - - 1.20

T

j

T

= 25 °C

j

Tj = 100 °C - 0.76 0.85

= 150 °C - 0.70 0.80

T

j

V

R

I

= 2 A

F

= V

RRM

--3

- 0.89 1.0

µA

V

To evaluate the conduction losses use the following equation:
P = 0.68 x I

2/8 Doc ID 17934 Rev 1

F(AV)

+ 0.06 I

F2(RMS)

STTH2R02-Y Characteristics

Table 5. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

I

= 1 A, dIF/dt = -50 A/µs,

F

VR = 30 V, Tj = 25 °C

= 1 A, dIF/dt = -100 A/µs,

I

F

VR = 30 V, Tj = 25 °C

IF = 2 A, dIF/dt = -200 A/µs,
VR = 160 V, Tj = 125 °C

IF = 2 A, dIF/dt = 100 A/µs
VFR = 1.1 x V

= 2 A, dIF/dt = 100 A/µs,

I

F

= 25 °C

T

j

, Tj = 25 °C

Fmax

Min. Typ Max. Unit

-2330

-1520

-34A

-40- ns

-2.0- V

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

100

IM(A)

T

T

I

I

M

M

80

60

d

δ

=tp/T

=tp/T

tp

tp

IFM(A)

50

40

30

ns

40

20

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

δ

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

Figure 3. Forward voltage drop versus

forward current (maximum values)

IFM(A)

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration

Z

th(j-a)/Rth(j-a)

1.0

SMA

S

=1cm²

0.9

cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

Single pulse

0.1

0.0

1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tP(ms)

Doc ID 17934 Rev 1 3/8

Characteristics STTH2R02-Y

C

Figure 5. Junction capacitance versus

reverse applied voltage
(typical values)

(pF)

100

10

1

1 10 100 1000

V

osc

F=1MHz

=30mV

Tj=25°C

VR(V)

RMS

Figure 7. Reverse recovery time versus dIF/dt

(typical values)

tRR(ns)

60

50

40

30

20

10

0

10 100 1000

Tj=125°C

Tj=25°C

IF=2A

V

=160V

R

dIF/dt(A/µs)

Figure 6. Reverse recovery charges versus

dI

/dt (typical values)

F

QRR(nC)

60

IF=2A

V

=160V

R

50

40

30

20

10

0

10 100 1000

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

Figure 8. Peak reverse recovery current

versus dI

IRM(A)

6

IF=2A

V

=160V

R

5

4

3

2

1

0

10 100 1000

/dt (typical values)

F

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

Figure 9. Dynamic parameters versus

junction temperature

Figure 10. Thermal resistance, junction to

ambient, versus copper surface
under each lead

R

QRR;IRM[Tj]/QRR;IRM[Tj=125°C]

1.4

IF=2A

=160V

V

R

1.2

1.0

I

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125 150

RM

Q

RR

Tj(°C)

(°C/W)

th(j-a)

120

100

80

60

40

20

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Epoxy printed circuit board,
copper thickness = 35 µm

SCU(cm²)

4/8 Doc ID 17934 Rev 1

STTH2R02-Y Ordering information scheme

2 Ordering information scheme

Figure 11. Ordering information scheme

STTH 2 R 02 XX

Ultrafast switching diode

Average forward current

2 = 2 A

Model R

Repetitive peak reverse voltage

02 = 200 V

Package

U = SMB in tape and reel
Y = Automotive grade

Doc ID 17934 Rev 1 5/8

Package information STTH2R02-Y

3 Package information

● Epoxy meets UL94, V0

● Lead-free package

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 6. SMB dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

E1

Ref.

Millimeters Inches

Min. Typ. Max. Min. Typ. Max.

D

A1 1.90 2.15 2.45 0.075 0.085 0.096

A2 0.05 0.15 0.20 0.002 0.006 0.008

b 1.95 2.20 0.077 0.087

E

c 0.15 0.41 0.006 0.016

E 5.10 5.40 5.60 0.201 0.213 0.220

A1

c

L

A2

b

E1 4.05 4.30 4.60 0.159 0.169 0.181

D 3.30 3.60 3.95 0.130 0.142 0.156

L 0.75 1.15 1.60 0.030 0.045 0.063

Figure 12. SMB footprint (dimensions in mm)

5.25

6/8 Doc ID 17934 Rev 1

2.22

1.751.751.75

STTH2R02-Y Ordering information

4 Ordering information

Table 7. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STTH2R02UY R2UY SMB 0.12 g 2500 Tape and reel

5 Revision history

Table 8. Document revision history

Date Revision Changes

20-Oct-2010 1 Initial release.

Doc ID 17934 Rev 1 7/8

STTH2R02-Y

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