Zetex (Now Diodes) FMMT717, FMMT718, FMMT720, FMMT722, FMMT723 Schematic [ru]
SuperSOT
SOT23 PNP SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 JUNE 1996
FEATURES
* 625mW POWER DISSIPATION
*IC CONT 2.5A
*I
Up To 10A Peak Pulse Current
C
* Excellent h
* Extremely Low Saturation Voltage E.g. 10mV Typ.
* Exhibits extremely low equivalent on-resistance; R
Characteristics Up To 10A (pulsed)
fe
CE(sat)
FMMT717 FMMT718
FMMT720 FMMT722
FMMT723
C
E
B
DEVICE TYPE COMPLEMENT PARTMARKING R
FMMT717 FMMT617 717
FMMT718 FMMT618 718
FMMT720 FMMT619 720
72m
97m
163m
CE(sat)
Ω at 2.5A
Ω at 1.5A
Ω at 1.5A
FMMT722 722 -
FMMT723 FMMT624 723 -
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL
FMMT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C* P
amb
Operating and Storage
Temperature Range
*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
Spice parameter data is available upon request for these devices
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
FMMT
717
718
FMMT
720
FMMT
722
FMMT
723 UNIT
-12 -20 -40 -70 -100 V
-12 -20 -40 -70 -100 V
-5 -5 -5 -5 -5 V
-10 -6 -4 -3 -2.5 A
-2.5 -1.5 -1.5 -1.5 -1 A
-500 mA
625 mW
-55 to +150 °C
µs. Duty cycle ≤ 2%
3 - 159
ELECTRICAL CHARACTERISTICS (at T
= 25°C unless otherwise stated).
amb
PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off Current I
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter Turn-On
Voltage
Static Forward Current
Transfer
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
*Measured under pulsed conditions. Pulse width=300
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
f
T
obo
(on)
(off)
-12 -35 V
=-100µA
I
C
-12 -25 V IC=-10mA*
-5 -8.5 V
=-100µA
I
E
-100 nA VCB=-10V
-100 nA VEB=-4V
-10
-100
-110
-180
-100 nA V
mV
-17
mV
-140
mV
-170
mV
-220
=-10V
CES
I
=-0.1A, IB=-10mA*
C
I
=-1A, IB=-10mA*
C
=-1.5A, IB=-50mA*
I
C
I
=-2.5A, IB=-50mA*
C
-0.9 -1.0 V IC=-2.5A, IB=-50mA*
-0.8 -1.0 V IC=-2.5A, VCE=-2V*
300
300
180
60
45
475
450
275
100
70
I
=-10mA, VCE=-2V*
C
=-100mA, VCE=-2V*
I
C
I
=-2.5A, VCE=-2V*
C
=-8A, VCE=-2V*
I
C
I
=-10A, VCE=-2V*
C
80 110 MHz IC=-50mA, VCE=-10V
f=100MHz
21 30 pF VCB=-10V, f=1MHz
70 ns VCC=-6V, IC=-2A
=50mA
I
130 ns
µs. Duty cycle ≤ 2%
B1=IB2
3 - 160 3 - 161
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