Zetex (Now Diodes) FMMT617, FMMT618, FMMT619, FMMT624, FMMT625 Schematic [ru]
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SuperSOT
FMMT617 FMMT618
SOT23 NPN SILICON POWER FMMT619 FMMT624
FMMT625
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
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625mW POWER DISSIPATION |
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IC CONT 3A |
E |
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12A Peak Pulse Current |
C |
*Excellent HFE Characteristics Up To 12A (pulsed)
* Extremely Low Saturation Voltage E.g. 8mV Typ. |
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* Extremely Low Equivalent On Resistance; RCE(sat) |
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DEVICE TYPE |
COMPLEMENT |
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PARTMARKING |
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RCE(sat) |
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FMMT617 |
FMMT717 |
617 |
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50mΩ at 3A |
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FMMT618 |
FMMT718 |
618 |
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50mΩ at 2A |
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FMMT619 |
FMMT720 |
619 |
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75mΩ at 2A |
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FMMT624 |
FMMT723 |
624 |
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FMMT625 |
– |
625 |
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ABSOLUTE MAXIMUM RATINGS. |
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FMMT |
FMMT |
FMMT |
FMMT |
FMMT |
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PARAMETER |
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SYMBOL |
617 |
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618 |
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619 |
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624 |
625 |
UNIT |
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Collector-Base Voltage |
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VCBO |
15 |
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20 |
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50 |
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125 |
150 |
V |
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Collector-Emitter Voltage |
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VCEO |
15 |
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20 |
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50 |
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125 |
150 |
V |
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Emitter-Base Voltage |
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VEBO |
5 |
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5 |
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5 |
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5 |
5 |
V |
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Peak Pulse Current** |
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ICM |
12 |
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6 |
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6 |
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3 |
3 |
A |
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Continuous Collector Current |
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IC |
3 |
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2.5 |
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2 |
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1 |
1 |
A |
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Base Current |
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IB |
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500 |
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mA |
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Power Dissipation at Tamb=25°C* |
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Ptot |
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625 |
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mW |
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Operating and Storage Temperature |
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Tj:Tstg |
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-55 to +150 |
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°C |
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Range |
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*Maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2% Spice parameter data is available upon request for these devices
3 - 149
FMMT618
FMMT619
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
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FMMT618 |
FMMT619 |
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PARAMETER |
SYMBOL |
MIN. |
TYP. |
MAX. |
MIN. |
TYP. |
MAX. |
UNIT |
CONDITIONS. |
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Collector-Base |
V(BR)CBO |
20 |
100 |
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50 |
190 |
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V |
IC=100μA |
Breakdown Voltage |
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Collector-Emitter |
V(BR)CEO |
20 |
27 |
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50 |
65 |
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V |
IC=10mA* |
Breakdown Voltage |
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Emitter-Base |
V(BR)EBO |
5 |
8.3 |
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5 |
8.3 |
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V |
IE=100μA |
Breakdown Voltage |
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Collector Cut-Off |
ICBO |
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100 |
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nA |
VCB=16V |
Current |
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100 |
nA |
VCB=40V |
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Emitter Cut-Off |
IEBO |
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100 |
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100 |
nA |
VEB=4V |
Current |
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Collector Emitter |
ICES |
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100 |
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nA |
VCES=16V |
Cut-Off Current |
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100 |
nA |
VCES=40V |
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Collector-Emitter |
VCE(sat) |
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8 |
15 |
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10 |
20 |
mV |
IC=0.1A, IB=10mA* |
Saturation Voltage |
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70 |
150 |
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125 |
200 |
mV |
IC=1A, IB=10mA* |
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150 |
220 |
mV |
IC=2A, IB=50mA* |
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130 |
200 |
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mV |
IC=2.5A, IB=50mA* |
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Base-Emitter |
VBE(sat) |
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0.87 |
1.0 |
V |
IC=2A, IB=50mA* |
Saturation Voltage |
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0.89 |
1.0 |
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V |
IC=2.5A, IB=50mA* |
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Base-Emitter |
VBE(on) |
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0.80 |
1.0 |
V |
IC=2A, VCE=2V* |
Turn-On Voltage |
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0.79 |
1.0 |
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V |
IC=2.5A, VCE=2V* |
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Static Forward |
hFE |
200 |
400 |
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200 |
400 |
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IC=10mA, VCE=2V* |
Current Transfer |
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300 |
450 |
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300 |
450 |
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IC=200mA, VCE=2V* |
Ratio |
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200 |
400 |
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IC=1A, VCE=2V* |
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200 |
360 |
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100 |
225 |
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IC=2A, VCE=2V* |
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100 |
180 |
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40 |
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IC=6A, VCE=2V* |
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Transition |
fT |
100 |
140 |
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100 |
165 |
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MHz |
IC=50mA, VCE=10V |
Frequency |
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f=100MHz |
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Output Capacitance |
Cobo |
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23 |
30 |
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12 |
20 |
pF |
VCB=10V, f=1MHz |
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Turn-On Time |
t(on) |
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170 |
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170 |
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VCC=10V, IC=1A |
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IB1=-IB2=10mA |
Turn-Off Time |
t(off) |
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400 |
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750 |
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ns |
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*Measured under pulsed conditions. Pulse width=300μs. Duty cycle ≤ 2%
3 - 152