SuperSOT
SOT23 NPN SILICON POWER
(SWITCHING) TRANSISTORS
ISSUE 3 - NOVEMBER 1995
FEATURES
* 625mW POWER DISSIPATION
*IC CONT 3A
* 12A Peak Pulse Current
* Excellent H
* Extremely Low Saturation Voltage E.g. 8mV Typ.
* Extremely Low Equivalent On Resistance; R
Characteristics Up To 12A (pulsed)
FE
CE(sat)
FMMT617 FMMT618
FMMT619 FMMT624
FMMT625
C
E
B
DEVICE TYPE COMPLEMENT PARTMARKING R
FMMT617 FMMT717 617 50mΩ at 3A
FMMT618 FMMT718 618 50m
FMMT619 FMMT720 619 75m
FMMT624 FMMT723 624 -
FMMT625 625 -
ABSOLUTE MAXIMUM RATINGS.
FMMT
PARAMETER SYMBOL
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Peak Pulse Current** I
Continuous Collector Current I
Base Current I
Power Dissipation at T
=25°C* P
amb
Operating and Storage Temperature
Range
CM
C
B
T
CBO
CEO
EBO
tot
j:Tstg
FMMT
617
15 20 50 125 150 V
15 20 50 125 150 V
55555V
126633A
32.5211A
CE(sat)
Ω at 2A
Ω at 2A
FMMT
FMMT
618
619
FMMT
624
500 mA
625 mW
-55 to +150 °C
625 UNIT
* Maximum power dissipation is calculated assuming that the device is mounted on a ceramic
substrate measuring 15x15x0.6mm
**Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
Spice parameter data is available upon request for these devices
3 - 149
ELECTRICAL CHARACTERISTICS (at T
FMMT618
FMMT619
PARAMETER SYMBOL
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off
Current
Emitter Cut-Off
Current
Collector Emitter
Cut-Off Current
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn-On Voltage
Static Forward
Current Transfer
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
EBO
I
CES
V
CE(sat)
V
BE(sat)
V
BE(on)
h
FE
Ratio
Transition
Frequency
Output Capacitance C
Turn-On Time t
Turn-Off Time t
f
T
obo
(on)
(off)
FMMT618 FMMT619
MIN. TYP. MAX. MIN. TYP. MAX.
20 100 50 190 V
20 27 50 65 V IC=10mA*
5 8.3 5 8.3 V
8
70
130
0.89 1.0
0.79 1.0
200
400
300
450
200
360
100
180
100 140 100 165 MHz IC=50mA, VCE=10V
23 30 12 20 pF VCB=10V, f=1MHz
170 170 ns VCC=10V, IC=1A
400 750 ns
= 25°C unless otherwise stated).
amb
100
100nAnA
100 100 nA VEB=4V
100
100nAnA
15
150
10
125
150
20
200
220
200
0.87 1.0 VVI
0.80 1.0 VVI
200
400
300
450
200
400
100
225
40
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%
UNIT CONDITIONS.
I
=100µA
C
=100µA
I
E
VCB=16V
V
=40V
CB
V
=16V
CES
=40V
V
CES
=0.1A, IB=10mA*
mV
I
C
=1A, IB=10mA*
I
mV
C
I
=2A, IB=50mA*
mV
C
I
=2.5A, IB=50mA*
mV
C
=2A, IB=50mA*
C
=2.5A, IB=50mA*
I
C
=2A, VCE=2V*
C
I
=2.5A, VCE=2V*
C
IC=10mA, VCE=2V*
I
=200mA, VCE=2V*
C
I
=1A, VCE=2V*
C
=2A, VCE=2V*
I
C
I
=6A, VCE=2V*
C
f=100MHz
I
=-IB2=10mA
B1
3 - 152 3 - 153
FMMT619
1
+25°C
100m
10m
TYPICAL CHARACTERISTICS
IC/IB=40
0.6
0.4
IC/IB=100
I
C/IB
=50
IC/IB=10
0.2
-55°C
25°C
100°C
1m
1m 10m 100m 1 10
IC - Collector Current (A)
CE(sat)
V
100°C
1.2
1.0
25° C
0.8
0.6
-55°C
0.4
0.2
0.0
10mA 100mA 1A
v I
C
Collector Current
C
HFEvs I
VCE=2V
1.0
0.8
0.6
0.4
0.2
0.0
-55°C
25° C
100°C
10mA 100mA 1A
Collector Current
BE(ON)
V
vs I
C
VCE=2V
0.0
10mA 100mA 1A
10A
10A1mA
Collector Current
CE(SAT)
V
1.2
IC/IB=40
450
225
0
10A1mA
1.0
0.8
0.6
0.4
0.2
0.0
-55°C
25°C
100°C
10mA 100mA 1A
vs I
C
10A1mA
Collector Current
BE(SAT)
V
SINGLE PULSE TEST T
10
1.0
D.C.
1s
100ms
10ms
1ms
0.1
10A1mA
0.01
100µs
0.1
110100
vs I
amb
C
= 25 deg C
VCE(VOLTS)
Safe Operating Area
3 - 154 3 - 155
FMMT617 FMMT624
FMMT618 FMMT625
SuperSOT Series
FMMT619
THERMAL CHARACTERISTICS AND DERATING INFORMATION
DERATING CURVE
FMMT717 FMMT722
FMMT718 FMMT723
FMMT720
MAXIMUM TRANSIENT THERMAL RESISTANCE
* Reference above figures, Devices were mounted on a 15mmx15mm ceramic substrate
3 - 158
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