Zetex (Now Diodes) FMMT558 Schematic [ru]
SOT23 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 – APRIL 2002
FEATURES
* 400 Volt V
CEO
FMMT458
C
E
COMPLEMENTARY TYPE – FMMT558
PARTMARKING DETAIL – 458
ABSOLUTE MAXIMUM RATINGS.
SOT23
PARAMETER SYMBOL VALUE UNIT
Collector-Base Voltage V
Collector-Emitter Voltage V
Emitter-Base Voltage V
Continuous Collector Current I
Peak Pulse Current I
Base Current I
Power Dissipation at T
=25°C P
amb
Operating and Storage Temperature Range T
ELECTRICAL CHARACTERISTICS (at T
amb
CBO
CEO
EBO
C
CM
B
tot
j:Tstg
= 25°C).
400 V
400 V
5V
225 mA
1A
200 mA
500 mW
-55 to +150 °C
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Collector-Base
Breakdown Voltage
Collector-Emitter
Breakdown Voltage
Emitter-Base
Breakdown Voltage
Collector Cut-Off Current I
Collector Cut-Off Current I
Emitter Cut-Off Current I
Collector-Emitter
Saturation Voltage
Base-Emitter
Saturation Voltage
Base-Emitter
Turn On Voltage
Static Forward
Current Transfer Ratio
Transition Frequency f
Output Capacitance C
Switching times t
V
(BR)CBO
V
CEO(sus)
V
(BR)EBO
CBO
CES
EBO
V
CE(sat)
V
BE(sat)
V
BE(on)
h
obo
on
t
off
400 V
I
=100µA
C
400 V IC=10mA*
5V
=100µA
I
E
100 nA VCB=320V
100 nA VCE=320V
100 nA VEB=4V
0.2
0.5
V
V
IC=20mA, IB=2mA*
I
=50mA, IB=6mA*
C
0.9 V IC=50mA, IB=5mA*
0.9 V IC=50mA, VCE=10V*
FE
100
100
300
15
T
50 MHz IC=10mA, VCE=20V
5pFV
135 Typical
2260 Typical
ns
ns
IC=1mA, VCE=10V
I
=50mA, VCE=10V*
C
I
=100mA, VCE=10V*
C
f=20MHz
=20V, f=1MHz
CB
IC=50mA, VCC=100V
I
=5mA, IB2=-10mA
B1
*Measured under pulsed conditions.
Spice parameter data is available upon request for this device
B
TBA
TYPICAL CHARACTERISTICS
FMMT458
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
1.0
0.1
-55°C
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC -
CE(sat)
0.001
V
-55°C
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC -
Single Pulse Test at T
D.C.
1s
100ms
10ms
1.0ms
0.1ms
Collector Voltage (Volts)
CE
V
-
BE(sat)
v IC
v IC
amb
=25°C
100110
Safe Operating Area
IC/IB=10
IC/IB=10
1000
1.6
1.4
)
s
t
1.2
l
o
V
1.0
(
-
)
t
0.8
a
s
(
E
0.6
C
V
0.4
0.2
0
0.001
1.6
1.4
n
i
a
1.2
G
d
1.0
e
s
i
l
0.8
a
m
r
0.6
o
N
0.4
-
E
F
0.2
h
0
0.001
IC/IB=10
IC/IB=20
IC/IB=50
0.01 0.1 20110
Collector Current (Amps)
IC -
CE(sat)
V
+100°C
+2 5°C
-55°C
0.01 0.1 20110
Collector Current (Amps)
IC -
v IC
Tamb=25°C
VCE=10V
300
200
100
1.6
1.4
)
s
t
l
1.2
o
V
(
1.0
-
)
t
0.8
a
s
(
E
0.6
C
V
0.4
0.2
0
0.001
)
s
t
l
o
V
(
-
)
t
a
s
(
E
B
V
hFEv IC V
)
-55°C
1.6
1.4
)
1.2
s
t
l
o
1.0
V
(
-
0.8
E
B
V
0.6
0.4
0.2
0
0.001
+25°C
+100°C
+175°C
0.01 0.1 20110
Collector Current (Amps)
IC -
BE(on)
V
v IC
VCE=10V
s
p
m
A
(
t
n
e
r
r
u
C
r
o
t
c
e
l
C
l
o
C
I
0.01
0.001
TBA
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