Transcend TS256MUSD, TS2GUSD-1, TS2GUSD-MS, TS512MUSD-MS, TS512MUSD DATASHEET

TS256M~2GUSD			microSD Memory Card
Description		Features
Transcend microSD card series are non-volatile,		• ROHS compliant product.
which means no external power is required to retain		•	Operating Voltage: 2.7 ~ 3.6V
the information stored on it. Besides, it is also a		•	Operating Temperature: -25 ~ 85°C
solid-state device that without moving parts to skip or		•	Durability: 10,000 insertion/removal cycles
break down. Based on original NAND flash chip,		•	Fully compatible with SD card spec. v1.1
Transcend microSD can offer an incredible		•	Comply with SD Association File System Specification
combination of fast data transfer, great flexibility,		•	Mechanical Write Protection Switch with microSD adapter
excellent security and incredibly small size.		•	SD Host allows MultiMediaCard upward compatibility
		•	Form Factor: 11mm x 15mm x 1mm
Placement	1 2 3 4 5 6 7 8

		Front			Back
	Pin Definition
	Pin No.			SD Mode				SPI Mode
		Name	Type		Description	Name	Type		Description
	1	DAT2	I/O/PP		Data Line [Bit2]	RSV			Reserved
	2	CD/DAT3	I/O/PP		Card Detect / Data Line [Bit3]	CS	I		Chip Select
	3	CMD	PP		Command / Response	DI	I		Data In
	4	VDD	S		Supply voltage	VDD	S		Supply voltage
	5	CLK	I		Clock	SCLK	I		Clock
	6	VSS	S		Supply voltage ground	VSS	S		Supply voltage ground
	7	DAT0	I/O/PP		Data Line [Bit0]	DO	O/PP		Data out
	8	DAT1	I/O/PP		Data Line [Bit1]	RSV			Reserved
					S: Power Supply; I:Input; O:Output; PP:Push-Pull
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TS256M~2GUSD	microSD Memory Card

Architecture

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	TS256M~2GUSD						microSD Memory Card
	Bus Operating Conditions
	• General
	Parameter	Symbol		Min.	Max.	Unit
	Peak voltage on all lines		-0.3		VDD+0.3	V
	All Inputs
	Input Leakage Current			-10	10	µA
	All Outputs
	Output Leakage Current			-10	10	µA
	• Power Supply Voltage
	Parameter	Symbol		Min.	Max.	Unit
	Supply voltage	VDD	2.0		3.6	V	CMD0, 15,55,ACMD41
							commands
	Supply voltage specified in OCR register						Except CMD0, 15,55,
							ACMD41 commands
	Supply voltage differentials (VSS1, VSS2)		-0.3		0.3	V
	Power up time				250	ms	From 0v to VDD Min.

Note. The current consumption of any card during the power-up procedure must not exceed 10 mA.

• Bus Signal Line Load

The total capacitance CL the CLK line of the SD Memory Card bus is the sum of the bus master capacitance CHOST, the bus capacitance CBUS itself and the capacitance CCARD of each card connected to this line:

CL = CHOST + CBUS + Ν*CCARD

Where N is the number of connected cards. Requiring the sum of the host and bus capacitances not to exceed 30 pF for up to 10 cards, and 40 pF for up to 30 cards, the following values must not be exceeded:

Parameter	Symbol	Min.	Max.	Unit
Bus signal line capacitance	CL		100	pF	fPP ≤ 20	MHz, 7 cards
Single card capacitance	CCARD		10	pF
Maximum signal line inductance			16	nH	fPP ≤ 20	MHz
Pull-up resistance inside card (pin1)	RDAT3	10	90	KΩ	May be used for card
					detection

Note that the total capacitance of CMD and DAT lines will be consist of CHOST, CBUS and one CCARD only since they are connected separately to the SD Memory Card host.

	Parameter	Symbol	Min.	Max.	Unit
	Pull-up resistance	RCMD, RDAT	10	100	KΩ	To prevent bus floating
	Bus signal line capacitance	CL		250	pF	fPP ≤ 5 MHz, 21 cards
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TS256M~2GUSD	microSD Memory Card

• Bus Signal Levels

As the bus can be supplied with a variable supply voltage, all signal levels are related to the supply voltage.

To meet the requirements of the JEDEC specification JESD8-1A, the card input and output voltages shall be within the following specified ranges for any VDD of the allowed voltage range:

Parameter	Symbol	Min.	Max.	Unit	Remark
Output HIGH voltage	VOH	0.75* VDD		V	IOH = -100 μA @VDD min
Output LOW voltage	VOL		0.125* VDD	V	IOL = 100 μA @VDD min
Input HIGH voltage	VIH	0.625* VDD	VDD + 0.3	V
Input LOW voltage	VIL	VSS – 0.3	0.25* VDD	V

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TS256M~2GUSD	microSD Memory Card
• Bus Timing (Default)

Parameter

Symbol

Min

Max.

Unit

Remark

Clock CLK (All values are referred to min (VIH) and max (VIL)

	Clock frequency Data Transfer Mode	fPP	0		25		MHz	CL ≤ 100 pF, (7 cards)
	Clock frequency Identification Mode	fOD	0		400		KHz	CL ≤ 250 pF, (21 cards)
	(The low freq. is required for MultiMediaCard
	compatibility.)
	Clock low time	tWL	10				ns	CL ≤ 100 pF, (7 cards)
			50				ns	CL ≤ 250 pF, (21 cards)
	Clock high time	tWH	10				ns	CL ≤ 100 pF, (7 cards)
			50				ns	CL ≤ 250 pF, (21 cards)
	Clock rise time	tTLH			10		ns	CL ≤ 100 pF, (7 cards)
					50		ns	CL ≤ 250 pF, (21 cards)
	Clock fall time	tTHL			10		ns	CL ≤ 100 pF, (7 cards)
					50		ns	CL ≤ 250 pF, (21 cards)
	Inputs CMD, DAT (referenced to CLK)
	Input set-up time	tISU	5				ns	CL ≤ 25 pF, (1 cards)
	Input hold time	tIH	5				ns	CL ≤ 25 pF, (1 cards)
	Outputs CMD, DAT (referenced to CLK)
	Output Delay time	tODLY		0		14	ns	CL ≤ 25 pF, (1 cards)
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TS256M~2GUSD	microSD Memory Card
• Bus Timing (High-speed Mode)

Parameter

Symbol

Min

Max.

Unit

Remark

Clock CLK (All values are referred to min (VIH) and max (VIL)

Clock frequency Data Transfer Mode	fPP	0	50	MHz	CCARD ≤ 10 pF, (1 card)
Clock low time	tWL	7		ns	CCARD ≤ 10 pF, (1 card)
Clock high time	tWH	7		ns	CCARD ≤ 10 pF, (1 card)
Clock rise time	tTLH		3	ns	CCARD ≤ 10 pF, (1 card)
Clock fall time	tTHL		3	ns	CCARD ≤ 10 pF, (1 card)
Inputs CMD, DAT (referenced to CLK)
Input set-up time	tISU	6		ns	CCARD ≤ 10 pF, (1 card)
Input hold time	tIH	2		ns	CCARD ≤ 10 pF, (1 card)
Outputs CMD, DAT (referenced to CLK)
Output Delay time during Data Transfer Mode	tODLY		14	ns	CL ≤ 40 pF, (1 card)
Output Hold time	tOH	2.5		ns	CL ≤ 40 pF, (1 card)
Total System capacitance for each line1	CL		40	pF	(1 card)

1) In order to satisfy severe timing, host shall drive only one card.

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	TS256M~2GUSD		microSD Memory Card
	Reliability and Durability
	Temperature	Operation: -25°C / 85°C (Target spec)
		Storage: -40°C (168h) / 85°C (500h)
		Junction temperature: max. 95°C
	Moisture and corrosion	Operation: 25°C / 95% rel. humidity
		Storage: 40°C / 93% rel. hum./500h
		Salt Water Spray: 3% NaCl/35C; 24h acc. MIL STD Method 1009
	Durability	10000 mating cycles
	Bending	10N
	Torque	0.10N*m , +/- 2.5deg max
	Drop test	1.5m free fall
	UV light exposure	UV: 254nm, 15Ws/cm² according to ISO 7816-1
	Visual inspection	No warppage; no mold skin; complete form; no cavities surface smoothness <= -0.1
	Shape and form	mm/cm² within contour; no cracks; no pollution (fat, oil dust, etc.)

Above technical information is based on standard data and tested to be reliable. However, Transcend makes no warranty, either expressed or implied, as to its accuracy and assumes no liability in connection with the use of this product. Transcend reserves the right to make changes in specifications at any time without prior notice.

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TS256M~2GUSD	microSD Memory Card

Register Information

Within the card interface six registers are defined: OCR, CID, CSD, RCA, DSR and SCR. These can be accessed only by corresponding commands (see Chapter 4.7). The OCR, CID, CSD and SCR registers carry the card/content specific information, while the RCA and DSR registers are configuration registers storing actual configuration parameters.

1. OCR register

The 32-bit operation conditions register stores the VDD voltage profile of the card. In addition, this register includes a status information bit. This status bit is set if the card power up procedure has been finished. The OCR register shall be implemented by the cards which do not support the full operating voltage range of the SD Memory Card bus, or if the card power up extends the definition in the timing diagram.

A voltage range is not supported if the corresponding bit value is set to LOW. As long as the card is busy, the corresponding bit (31) is set to LOW.

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