TSHA650.
Vishay Telefunken
GaAlAs Infrared Emitting Diodes in ù 5 mm (T±1¾)
Package
Description |
94 8389 |
The TSHA650. series are high efficiency infrared emitting diodes in GaAlAs on GaAlAs technology, molded in a clear, untinted plastic package.
In comparison with the standard GaAs on GaAs technology these high intensity emitters feature about 70 % radiant power improvement.
In contrast to the TSHA550. series lead stand±offs are omitted.
Features
D Extra high radiant power
DSuitable for high pulse current operation
DStandard T±1¾ (ù 5 mm) package
DLeads formed without stand±off
DAngle of half intensity ϕ = ± 24°
DPeak wavelength lp = 875 nm
DHigh reliability
DGood spectral matching to Si photodetectors
Applications
Infrared remote control and free air transmission systems with high power and comfortable radiation angle requirements in combination with PIN photodiodes or phototransistors.
Because of the reduced radiance absorption in glass at the wavelength of 875 nm, this emitter series is also suitable for systems with panes in the transmission range between emitter and detector.
Absolute Maximum Ratings
Tamb = 25_C
Parameter |
Test Conditions |
Symbol |
Value |
Unit |
Reverse Voltage |
|
VR |
5 |
V |
Forward Current |
|
IF |
100 |
mA |
Peak Forward Current |
tp/T = 0.5, tp = 100 ms |
IFM |
200 |
mA |
Surge Forward Current |
tp = 100 ms |
IFSM |
2.5 |
A |
Power Dissipation |
|
PV |
210 |
mW |
Junction Temperature |
|
Tj |
100 |
°C |
Operating Temperature Range |
|
Tamb |
±55...+100 |
°C |
Storage Temperature Range |
|
Tstg |
±55...+100 |
°C |
Soldering Temperature |
t x 5sec, 2 mm from case |
Tsd |
260 |
°C |
Thermal Resistance Junction/Ambient |
|
RthJA |
350 |
K/W |
Document Number 81022 |
www.vishay.de •FaxBack +1-408-970-5600 |
Rev. 3, 20-May-99 |
1 (6) |
TSHA650.
Vishay Telefunken
Basic Characteristics
Tamb = 25_C
Parameter |
Test Conditions |
Symbol |
Min |
Typ |
Max |
Unit |
Forward Voltage |
IF = 100 mA, tp = 20 ms |
VF |
|
1.5 |
1.8 |
V |
Temp. Coefficient of VF |
IF = 100mA |
TKVF |
|
±1.6 |
|
mV/K |
Reverse Current |
VR = 5 V |
IR |
|
|
100 |
mA |
Junction Capacitance |
VR = 0 V, f = 1 MHz, E = 0 |
Cj |
|
20 |
|
pF |
Temp. Coefficient of fe |
IF = 20 mA |
TKfe |
|
±0.7 |
|
%/K |
Angle of Half Intensity |
|
ϕ |
|
±24 |
|
deg |
Peak Wavelength |
IF = 100 mA |
lp |
|
875 |
|
nm |
Spectral Bandwidth |
IF = 100 mA |
Dl |
|
80 |
|
nm |
Temp. Coefficient of lp |
IF = 100 mA |
TKlp |
|
0.2 |
|
nm/K |
Rise Time |
IF = 100 mA |
tr |
|
600 |
|
ns |
|
IF = 1.5 A |
tr |
|
300 |
|
ns |
Fall Time |
IF = 100 mA |
tf |
|
600 |
|
ns |
|
IF = 1.5 A |
tf |
|
300 |
|
ns |
Type Dedicated Characteristics
Tamb = 25_C
Parameter |
Test Conditions |
Type |
Symbol |
Min |
Typ |
Max |
Unit |
Forward Voltage |
IF=1.5A, tp=100ms |
TSHA6500/6501 |
VF |
|
3.2 |
4.9 |
V |
|
|
TSHA6502/6503 |
VF |
|
3.2 |
4.5 |
V |
|
IF=100mA, |
TSHA6500 |
Ie |
12 |
20 |
|
mW/sr |
|
tp=20ms |
TSHA6501 |
I |
16 |
25 |
|
mW/sr |
|
|
|
e |
|
|
|
|
|
|
TSHA6502 |
Ie |
20 |
30 |
|
mW/sr |
Radiant Intensity |
|
TSHA6503 |
Ie |
24 |
35 |
|
mW/sr |
IF=1.5A, tp=100ms |
TSHA6500 |
Ie |
150 |
240 |
|
mW/sr |
|
|
|
||||||
|
|
TSHA6501 |
Ie |
200 |
300 |
|
mW/sr |
|
|
TSHA6502 |
Ie |
250 |
360 |
|
mW/sr |
|
|
TSHA6503 |
Ie |
300 |
420 |
|
mW/sr |
Radiant Power |
IF=100mA, |
TSHA6500 |
fe |
|
22 |
|
mW |
|
tp=20ms |
TSHA6501 |
fe |
|
23 |
|
mW |
|
|
TSHA6502 |
fe |
|
24 |
|
mW |
|
|
TSHA6503 |
fe |
|
25 |
|
mW |
www.vishay.de •FaxBack +1-408-970-5600 |
Document Number 81022 |
2 (6) |
Rev. 3, 20-May-99 |
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