STMicroelectronics STTH2003CFP, STTH2003CG, STTH2003CR, STTH2003CT Schematic [ru]

Features

■ Combines highest recovery and reverse

voltage performance

■ Ultra-fast, soft and noise-free recovery

■ Insulated package TO-220FPAB:

– Electrical insulation: 2000 V DC
– Capacitance: 12 pF

STTH2003

High frequency secondary rectifier

A1

K

A2

K

Description

Dual center tap fast recovery epitaxial diodes
suited for switch mode power supply and high
frequency DC/DC converters.

Packaged in TO-220AB, TO-220FPAB, I

2

D

PAK, this device is especially intended for

secondary rectification.

2

PA K o r

A2

K

A1

TO-220FPAB

STTH2003CFP

A2

K

A1

TO-220AB

STTH2003CT

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

(max) 175 °C

T

j

(max) 1 V

V

F

t

(typ) 35 ns

rr

A2

A1

D2PAK

STTH2003CG

I2PAK

STTH2003CR

2 x 10 A

300 V

A1

A2

K

February 2011 Doc ID 5377 Rev 9 1/11

www.st.com

11

Characteristics STTH2003

1 Characteristics

Table 2. Absolute ratings (limiting values, per diode)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(peak)

I

I

RSM

T

Table 3. Thermal resistance

Repetitive peak reverse voltage 300 V

RRM

Forward current rms 30 A

2

I

Peak working forward

TO-220AB

current δ = 0.5

TO-220FPAB Tc = 125 °C

PAK, D2PAK,

Surge non repetitive forward current tp = 10 ms sinusoidal 110 A

FSM

Non repetitive avalanche current

Storage temperature range -65 to + 175 °C

stg

Maximum operating junction temperature 175 °C

T

j

T

= 140 °C

c

t

= 10 µs square

p

Per diode
Per device

10
20

5A

Symbol Parameter Value (max) Unit

2

PAK, D2PAK, TO-220AB

I

Per diode 2.5

To ta l 1 .3

th(j-c)

Junction to case

TO-220FPAB

Per diode 4.6

°C/W

R

To ta l 4

2

I

R

th(c)

Coupling

PAK, D2PAK, TO-220AB 0.1

TO-220FPAB 3.5

A

Table 4. Static electrical characteristics (per diode)

Symbol Parameter Test conditions Min. Typ. Max. Unit

T

= 25 °C

(1)

I

V

1. Pulse test: tp = 5 ms, δ < 2%

2. Pulse test: t

Reverse leakage current

R

(2)

Forward voltage drop

F

= 380 µs, δ < 2%

p

j

Tj = 125 °C 30 300

= 300 V

V

R

Tj = 25 °C

IF = 10 A

= 125 °C 0.85 1

T

j

To evaluate the conduction losses use the following equation: P = 0.75 x I

2/11 Doc ID 5377 Rev 9

+ 0.025 I

F(AV)

20

1.25

F2(RMS))

µA

V

STTH2003 Characteristics

3

0

Z/R

Table 5. Recovery characteristics

Symbol Parameter Test conditions Min. Typ. Max. Unit

I

= 0.5 A, Irr = 0.25 A

t

Reverse recovery time Tj = 25 °C

rr

F

IR = 1 A

= 1 A, VR = 30 V

I

F

/dt = -50 A/µs

dI

F

25

35

IF = 10 A

Forward recovery time Tj = 25 °C

t

fr

V

I

Peak forward voltage Tj = 25 °C

FP

Reverse recovery current

RM

Tj = 125 °C

S factor Softness factor 0.3 -

Figure 1. Conduction losses versus average

forward current (per diode)

dIF/dt = 100 A/µs

= 1.1 x V

V

FR

= 10 A,

I

F

Fmax

dIF/dt = 100 A/µs

I

= 10 A, VCC = 200 V

F

dIF/dt = 200 A/µs

Figure 2. Forward voltage drop versus

forward current (maximum values,

230 ns

3.5 V

8A

per diode)

P1(W)

14

12

10

8

6

4

2

0

024681012

δ = 0.05

δ = 0.1

δ = 0.2

I (A)

F(AV)

δ = 0.5

δ

=tp/T

δ = 1

T

tp

Figure 3. Relative variation of thermal

impedance junction to case versus
pulse duration

Z/R

th(j-c) th(j-c)

1.0

TO-220AB, D2PAK, I2PAK

0.8

I (A)

FM

200

100

10

1

0.50 0.75 1.00 1.25 1.50 1.75 2.00 2.25 2.50 2.75 3.00

T =125°C

j

T =75°C

j

V (V)

FM

T =25°C

j

Figure 4. Relative variation of thermal

impedance junction to case versus
pulse duration (TO-22FP0AB)

th(j-c) th(j-c)

1.0

0.8

ns

0.6

0.4

0.2

0.0
1E-

Single pulse

t (s)

p

1E-2 1E-1 1E+

Doc ID 5377 Rev 9 3/11

0.6

0.4

0.2

0.0

Single pulse

-

t (s)

p

-

Characteristics STTH2003

Figure 5. Peak reverse recovery current

versus dI

/dt (90% confidence, per

F

diode)

I (A)

RM

16

V =200V

R

14

T =125°C

j

12

10

8

6

4

2

0

0 50 100 150 200 250 300 350 400 450 500

I =0.5 x I

F F(AV)

I=I

F F(AV)

dI /dt(A/µs)

F

I =2 x I

F F(AV)

Figure 7. Softness factor (tb/ta) versus dIF/dt

(typical values, per diode)

S factor

0.60

V =200V

R

T =125°C

0.50

0.40

0.30

0.20

0.10

dI /dt(A/µs)

0.00

0 50 100 150 200 250 300 350 400 450 500

F

j

Figure 6. Reverse recovery time versus dI

(90% confidence, per diode)

t (ns)

rr

100

V =200V

R

T =125°C

80

60

40

20

0

0 50 100 150 200 250 300 350 400 450 500

I=I

F F(AV)

I =2 x I

F F(AV)

dI /dt(A/µs)

F

I =0.5 x I

F F(AV)

j

Figure 8. Relative variation of dynamic

parameters versus junction
temperature (reference: T

2.4

2.2

2.0

1.8

1.6

1.4

1.2

1.0

0.8

0.6

0.4

0.2

0.0
25 50 75 100 125

S factor

I

RM

T (°C)

j

= 125 °C)

j

F

/dt

Figure 9. Transient peak forward voltage

versus dI

/dt (90% confidence, per

F

Figure 10. Forward recovery time versus dI

diode) (TO-220AB)

t (ns)

V (V)

FP

10

I=I

F F(AV)

T =125°C

j

8

6

4

2

dI /dt(A/µs)

0

0 50 100 150 200 250 300 350 400 450 500

F

4/11 Doc ID 5377 Rev 9

fr

500

400

300

200

100

0

0 50 100 150 200 250 300 350 400 450 500

(90% confidence, per diode)

I=I

F F(AV)

V =1.1 x V max.

FR F

T =125°C

j

dI /dt(A/µs)

F

F

/dt