ST STTH4R02-Y User Manual

Features

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

■ AEC-Q101 qualified

STTH4R02-Y

Automotive ultrafast recovery diode

A

K

SMB

STTH4R02UY

K

STTH4R02SY

A

SMC

Description

The STTH4R02 uses ST's new 200 V planar Pt doping technology, and it is specially suited for switching mode base drive and transistor circuits.

Packaged SMB, SMC, this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection in automotive applications.

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 175 °C

j

(typ) 0.76 V

V

F

(typ) 16 ns

t

rr

4 A

200 V

December 2010 Doc ID 17391 Rev 1 1/9

www.st.com

9

Characteristics STTH4R02-Y

1 Characteristics

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 200 V

RRM

Forward rms current 70 A

Average forward current, δ = 0.5 Tc = 95 °C 4 A

Surge non repetitive forward current tp = 10 ms sinusoidal 70 A

FSM

Storage temperature range -65 to +175 °C

stg

Operating junction temperature range -40 to +175 °C

T

j

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

Junction to case 20 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

F

= 25 °C

T

j

= 125 °C 2 20

T

j

T

= 25 °C IF = 12 A 1.15 1.25

j

= 25 °C

j

Tj = 150 °C 0.76 0.83

V

R

= 4 A

I

F

= V

RRM

0.95 1.05

3

µA

VT

To evaluate the conduction losses use the following equation: P = 0.67 x I

Table 5. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

2/9 Doc ID 17391 Rev 1

+ 0.04 I

F(AV)

F2(RMS)

Reverse recovery time

Reverse recovery current

Forward recovery time

Forward recovery voltage

Test conditions

= 1 A, dIF/dt = -50 A/µs,

I

F

VR = 30 V, Tj = 25 °C

I

= 1 A, dIF/dt = -100 A/µs,

F

VR = 30 V, Tj = 25 °C

IF = 4 A, dIF/dt = -200 A/µs,

= 160 V, Tj = 125 °C

V

R

IF = 4 A, dIF/dt = 50 A/µs VFR = 1.1 x V

IF = 4 A, dIF/dt = 50 A/µs,

= 25 °C

T

j

, Tj = 25 °C

Fmax

Min. Typ. Max. Unit

24 30

ns

16 20

4.4 5.5 A

80 ns

1.6 V

STTH4R02-Y Characteristics

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

50

45

40

35

30

25

20

15

10

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

T

I

M

=tp/T

d

δ

Figure 3. Forward voltage drop versus

forward current (maximum values)

tp

δ

IFM(A)

100

75

50

25

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance, junction to ambient, versus pulse duration (SMB)

IFM(A)

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=150°C

Tj=25°C

VFM(V)

Z

th(j-a)/Rth(j-a)

1.0

SMB

0.9

S

=1cm²

Cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

Figure 5. Relative variation of thermal

impedance, junction to ambient, versus pulse duration (SMC)

Z

th(j-a)/Rth(j-a)

1.0

SMC

0.9

S

=1cm²

Cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

Figure 6. Junction capacitance versus

reverse applied voltage (typical values)

C(pF)

100

10

1 10 100 1000

Doc ID 17391 Rev 1 3/9

V

osc

F=1MHz

=30mV

Tj=25°C

RMS

VR(V)