Datasheet STTH4R02-Y Datasheet (ST)

Features

■ Very low conduction losses

■ Negligible switching losses

■ Low forward and reverse recovery times

■ High junction temperature

■ AEC-Q101 qualified

STTH4R02-Y

Automotive ultrafast recovery diode

A

K

SMB

STTH4R02UY

K

STTH4R02SY

A

SMC

Description

The STTH4R02 uses ST's new 200 V planar Pt
doping technology, and it is specially suited for
switching mode base drive and transistor circuits.

Packaged SMB, SMC, this device is intended for
use in low voltage, high frequency inverters, free
wheeling and polarity protection in automotive
applications.

Table 1. Device summary

Symbol Value

I

F(AV)

V

RRM

T

(max) 175 °C

j

(typ) 0.76 V

V

F

(typ) 16 ns

t

rr

4 A

200 V

December 2010 Doc ID 17391 Rev 1 1/9

www.st.com

9

Characteristics STTH4R02-Y

1 Characteristics

Table 2. Absolute ratings (limiting values at Tj = 25 °C, unless otherwise specified)

Symbol Parameter Value Unit

V

I

F(RMS)

I

F(AV)

I

T

Table 3. Thermal parameters

Repetitive peak reverse voltage 200 V

RRM

Forward rms current 70 A

Average forward current, δ = 0.5 Tc = 95 °C 4 A

Surge non repetitive forward current tp = 10 ms sinusoidal 70 A

FSM

Storage temperature range -65 to +175 °C

stg

Operating junction temperature range -40 to +175 °C

T

j

Symbol Parameter Value Unit

R

Table 4. Static electrical characteristics

Junction to case 20 °C/W

th(j-c)

Symbol Parameter Test conditions Min. Typ. Max. Unit

Reverse leakage

(1)

I

R

current

(2)

V

1. Pulse test: tp = 5 ms, δ < 2 %

2. Pulse test: tp = 380 µs, δ < 2 %

Forward voltage drop

F

= 25 °C

T

j

= 125 °C 2 20

T

j

T

= 25 °C IF = 12 A 1.15 1.25

j

= 25 °C

j

Tj = 150 °C 0.76 0.83

V

R

= 4 A

I

F

= V

RRM

0.95 1.05

3

µA

VT

To evaluate the conduction losses use the following equation:
P = 0.67 x I

Table 5. Dynamic characteristics

Symbol Parameter

t

rr

I

RM

t

fr

V

FP

2/9 Doc ID 17391 Rev 1

+ 0.04 I

F(AV)

F2(RMS)

Reverse recovery
time

Reverse recovery
current

Forward recovery
time

Forward recovery
voltage

Test conditions

= 1 A, dIF/dt = -50 A/µs,

I

F

VR = 30 V, Tj = 25 °C

I

= 1 A, dIF/dt = -100 A/µs,

F

VR = 30 V, Tj = 25 °C

IF = 4 A, dIF/dt = -200 A/µs,

= 160 V, Tj = 125 °C

V

R

IF = 4 A, dIF/dt = 50 A/µs
VFR = 1.1 x V

IF = 4 A, dIF/dt = 50 A/µs,

= 25 °C

T

j

, Tj = 25 °C

Fmax

Min. Typ. Max. Unit

24 30

ns

16 20

4.4 5.5 A

80 ns

1.6 V

STTH4R02-Y Characteristics

Figure 1. Peak current versus duty cycle Figure 2. Forward voltage drop versus

forward current (typical values)

IM(A)

50

45

40

35

30

25

20

15

10

5

0

0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0

P = 5 WP = 5 W

P = 2 WP = 2 W

P = 1 WP = 1 W

T

T

I

I

M

M

=tp/T

=tp/T

d

δ

Figure 3. Forward voltage drop versus

forward current (maximum values)

tp

tp

δ

IFM(A)

100

75

50

25

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=150°C

Tj=25°C

VFM(V)

Figure 4. Relative variation of thermal

impedance, junction to ambient,
versus pulse duration (SMB)

IFM(A)

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

Tj=150°C

Tj=25°C

VFM(V)

Z

th(j-a)/Rth(j-a)

1.0

SMB

0.9

S

=1cm²

Cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

Figure 5. Relative variation of thermal

impedance, junction to ambient,
versus pulse duration (SMC)

Z

th(j-a)/Rth(j-a)

1.0

SMC

0.9

S

=1cm²

Cu

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0.0

1.E-01 1.E+00 1.E+01 1.E+02 1.E+03

tp(s)

Figure 6. Junction capacitance versus

reverse applied voltage
(typical values)

C(pF)

100

10

1 10 100 1000

Doc ID 17391 Rev 1 3/9

V

osc

F=1MHz

=30mV

Tj=25°C

RMS

VR(V)

Characteristics STTH4R02-Y

Figure 7. Reverse recovery charges versus

dI

/dt (typical values)

F

QRR(nC)

120

IF=4A

V

=160V

R

100

80

60

40

20

0

0 50 100 150 200 250 300 350 400 450 500

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

Figure 9. Peak reverse recovery current

versus dI

IRM(A)

10

IF=4A

V

=160V

R

8

6

4

2

0

0 50 100 150 200 250 300 350 400 450 500

/dt (typical values)

F

Tj=125°C

Tj=25°C

dIF/dt(A/µs)

Figure 8. Reverse recovery time versus dI

(typical values)

tRR(ns)

80

70

60

50

40

30

20

10

0

10 100 1000

Tj=125°C

Tj=25°C

IF=4A

V

=160V

R

dIF/dt(A/µs)

Figure 10. Dynamic parameters versus

junction temperature

QRR;IRM[Tj]/QRR;IRM[Tj=125°C]

1.4

IF=4A

=160V

V

R

1.2

1.0

I

0.8

0.6

0.4

0.2

0.0

25 50 75 100 125 150

RM

Q

RR

Tj(°C)

F

/dt

Figure 11. Thermal resistance, junction to

ambient, versus copper surface
under tab - SMB

R

(°C/W)

th(j-a)

110

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Epoxy printed circuit board FR4,
copper thickness = 35 µm

SMB

SCU(cm²)

Figure 12. Thermal resistance, junction to

ambient, versus copper surface
under tab - SMC

R

(°C/W)

th(j-a)

100

90

80

70

60

50

40

30

20

10

0

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0

Epoxy printed circuit board FR4,
copper thickness = 35 µm

SCU(cm²)

SMC

4/9 Doc ID 17391 Rev 1

STTH4R02-Y Ordering information scheme

2 Ordering information scheme

Figure 13. Ordering information scheme

STTH 4 R 02 XXX

Ultrafast switching diode

Average forward current

4 = 4 A

Model R

Repetitive peak reverse voltage

02 = 200 V

Packag e

U = SMB in Tape and reel
S = SMC in Tape and reel
Y = Automotive grade

Doc ID 17391 Rev 1 5/9

Package information STTH4R02-Y

3 Package information

● Epoxy meets UL94, V0

● Band indicates cathode on SMB and SMC

In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
specifications, grade definitions and product status are available at: www.st.com
ECOPACK

Table 6. SMB dimensions

®

packages, depending on their level of environmental compliance. ECOPACK®

®

is an ST trademark.

.

Dimensions

E1

Ref.

Millimeters Inches

Min. Max. Min. Max.

D

A1 1.90 2.45 0.075 0.096

A2 0.05 0.20 0.002 0.008

b 1.95 2.20 0.077 0.087

E

A1

C

L

A2

b

c 0.15 0.40 0.006 0.016

D 3.30 3.95 0.130 0.156

E 5.10 5.60 0.201 0.220

E1 4.05 4.60 0.159 0.181

L 0.75 1.50 0.030 0.059

Figure 14. Footprint, dimensions in mm (inches)

1.62

(0.064) (0.102)

2.60
(0.064)

5.84

(0.300)

6/9 Doc ID 17391 Rev 1

1.62

2.18

(0.086)

STTH4R02-Y Package information

Table 7. SMC dimensions

Dimensions

Ref.

E1

A1 1.90 2.45 0.075 0.096

D

E

A2 0.05 0.20 0.002 0.008

(1)

b

(1)

c

D 5.55 6.25 0.218 0.246

A1

C

LE2

A2

b

E 7.75 8.15 0.305 0.321

E1 6.60 7.15 0.260 0.281

E2 4.40 4.70 0.173 0.185

L 0.75 1.50 0.030 0.059

1. Dimensions b and c apply to plated leads

Figure 15. Footprint, dimensions in mm (inches)

1.545.111.54

(0.061) (0.201)

(0.061)

Millimeters Inches

Min. Max. Min. Max.

2.90 3.20 0.114 0.126

0.15 0.40 0.006 0.016

3.14

(0.124)

8.19

(0.322)

Doc ID 17391 Rev 1 7/9

Ordering information STTH4R02-Y

4 Ordering information

Table 8. Ordering information

Order code Marking Package Weight Base qty Delivery mode

STTH4R02UY 4R2UY SMB 0.107 g

STTH4R02SY 4R2SY SMC 0.243 g

5 Revision history

Table 9. Document revision history

Date Revision Changes

03-Dec-2010 1 First issue.

2500 Tape and reel

8/9 Doc ID 17391 Rev 1

STTH4R02-Y

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Doc ID 17391 Rev 1 9/9