mode power factor correctors and hard
switching conditions
■ Designed for high di/dt operation. Hyperfast
recovery current to compete with SiC devices.
Allows downsizing of mosfet and heatsinks
■ Internal ceramic insulated devices with equal
thermal conditions for both 300 V diodes
■ Insulation (2500 V
same heatsink as mosfet and flexible
heatsinking on common or separate heatsink
■ Static and dynamic equilibrium of internal
diodes are warranted by design
■ Package Capacitance: C = 7 pF
Table 3.Absolute ratings (limiting values)
) allows placement on
RMS
8 A
600 V
150° C
2.24 V
4 A
13 ns
STTH806DTI
12
2
1
Insulated TO-220AC
Description
The TURBOSWITCH “H” is an ultra high
performance diode composed of two 300 V dice
in series. TURBOSWITCH “H” family drastically
cuts losses in the associated MOSFET when run
at high dI
Table 2.Order codes
/dt.
F
Part numberMarking
STTH806DTISTTH806DTI
SymbolParameterValueUnit
V
RRM
I
F(RMS)
I
FSM
T
T
Repetitive peak reverse voltage600V
RMS forward voltage14A
Surge non repetitive forward currenttp = 10 ms sinusoidal180A
Storage temperature range-65 to + 150° C
stg
Maximum operating junction temperature150° C
j
July 2007 Rev 51/7
www.st.com
7
Page 2
CharacteristicsSTTH806DTI
1 Characteristics
Table 4.Thermal parameter
SymbolParameterValueUnit
R
th(j-c)
Table 5.Static electrical characteristics
Junction to case thermal resistance2.6°C/W
SymbolParameterTest conditionsMin.TypMax.Unit
IR
V
= 25° C
(1)
Reverse leakage current
(2)
F
Forward voltage drop
j
= 125° C15100
T
j
= V
V
R
RRM
Tj = 25° C
IF = 8 A
= 150° C1.952.4
T
j
10
µA
3.6
T
1. Pulse test: tp = 100 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation:
P = 1.7 x I
parameters versus junction
temperature (reference: T
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
255075100125
S
I
RM
T (°C)
j
= 125° C)
j
I=I
F F(AV)
V =400V
R
Reference:T =125°C
j
Figure 10.Forward recovery time versus dI
(typical values)
t (ns)
fr
200
180
160
140
120
100
80
60
40
20
0
0100200300400500
dI /dt(A/µs)
F
I=I
F F(AV)
V =1.1 x V max.
FRF
T=125°C
j
F
/dt
4/7
Page 5
STTH806DTIPackage information
2 Package information
●Epoxy meets UL94, V0
●Cooling method: C
●Recommended torque value: 0.4 to 0.6 Nm
Table 8.TO-220AC insulated dimensions
Dimensions
Ref.
MillimetersInches
Min.Typ. Max. Min.Typ. Max.
A15.2015.90 0.5980.625
B
Ø I
L
C
b2
a13.750.147
a2 13.0014.00 0.5110.551
B10.0010.40 0.3930.409
F
b10.610.88 0.0240.034
A
I4
b21.231.32 0.0480.051
C4.404.60 0.1730.181
a1
l2
a2
c2
c10.490.70 0.0190.027
c22.402.72 0.0940.107
e4.805.40 0.1890.212
b1
e
M
F6.206.60 0.2440.259
c1
ØI3.753.85 0.1470.151
I415.80 16.40 16.80 0.622 0.646 0.661
L2.652.95 0.1040.116
l21.141.70 0.0440.066
M2.600.102
In order to meet environmental requirements, ST offers these devices in ECOPACK®
packages. These packages have a Lead-free second level interconnect. The category of
second level interconnect is marked on the package and on the inner box label, in
compliance with JEDEC Standard JESD97. The maximum ratings related to soldering
conditions are also marked on the inner box label. ECOPACK is an ST trademark.
ECOPACK specifications are available at: www.st.com.
5/7
Page 6
Ordering informationSTTH806DTI
3 Ordering information
Table 9.Ordering information
Part numberMarkingPackageWeightBase qtyDelivery mode
STTH806DTISTTH806DTITO-220AC2.3 g50Tube
4 Revision history
Table 10.Revision history
DateRevisionChanges
Oct-20032AInitial release
May-20043Reformatted
29-Jun-20054
Corrections to typographical errors. No technical
changes.
11-Jul-20075
Reformatted to current standards. Removed I
parameter from Table 3: Absolute ratings (limiting
values).
PEAK
6/7
Page 7
STTH806DTI
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