Datasheet STTH806DTI Datasheet (ST)

Page 1
Tandem 600 V hyperfast boost diode

Table 1. Main product characteristics

I
F(AV)
V
RRM
T
j (max)
V
F (max)
I
RM (typ.)
t
rr (typ.)
Features and benefits
■ Especially suited as boost diode in continuous
mode power factor correctors and hard switching conditions
■ Designed for high di/dt operation. Hyperfast
recovery current to compete with SiC devices. Allows downsizing of mosfet and heatsinks
■ Internal ceramic insulated devices with equal
thermal conditions for both 300 V diodes
■ Insulation (2500 V
same heatsink as mosfet and flexible heatsinking on common or separate heatsink
■ Static and dynamic equilibrium of internal
diodes are warranted by design
■ Package Capacitance: C = 7 pF

Table 3. Absolute ratings (limiting values)

) allows placement on
RMS
8 A
600 V
150° C
2.24 V
4 A
13 ns
STTH806DTI
12
2
1
Insulated TO-220AC
Description
The TURBOSWITCH “H” is an ultra high performance diode composed of two 300 V dice in series. TURBOSWITCH “H” family drastically cuts losses in the associated MOSFET when run at high dI

Table 2. Order codes

/dt.
F
Part number Marking
STTH806DTI STTH806DTI
Symbol Parameter Value Unit
V
RRM
I
F(RMS)
I
FSM
T
T
Repetitive peak reverse voltage 600 V
RMS forward voltage 14 A
Surge non repetitive forward current tp = 10 ms sinusoidal 180 A
Storage temperature range -65 to + 150 ° C
stg
Maximum operating junction temperature 150 ° C
j
July 2007 Rev 5 1/7
www.st.com
7
Page 2
Characteristics STTH806DTI

1 Characteristics

Table 4. Thermal parameter

Symbol Parameter Value Unit
R
th(j-c)
Table 5. Static electrical characteristics
Junction to case thermal resistance 2.6 °C/W
Symbol Parameter Test conditions Min. Typ Max. Unit
IR
V
= 25° C
(1)
Reverse leakage current
(2)
F
Forward voltage drop
j
= 125° C 15 100
T
j
= V
V
R
RRM
Tj = 25° C
IF = 8 A
= 150° C 1.95 2.4
T
j
10
µA
3.6
T
1. Pulse test: tp = 100 ms, δ < 2%
2. Pulse test: tp = 380 µs, δ < 2%
To evaluate the conduction losses use the following equation: P = 1.7 x I

Table 6. Dynamic characteristics

Symbol Parameter Test conditions Min Typ Max Unit
t
rr
Reverse recovery time Tj = 25° C
F(AV)
+ 0.087 I
F2(RMS)
= 0.5 A, Irr = 0.25 A, IR = 1 A 13
I
F
I
= 1 A, dIF/dt = - 50 A/µs
F
VR = 30 V
30
V
ns
I

Table 7. Turn-on switching characteristics

Reverse recovery current
RM
= 125° C
T
j
Reverse recovery charges 50
Q
rr
= 8 A, VR = 400,
I
F
/dt = - 200 A/µs
VdI
F
45.5
Symbol Parameter Test conditions Min. Typ Max. Unit
= 8 A, dIF/dt = 100 A/µs
I
Forward recovery time Tj = 25° C
t
fr
V
Forward recovery voltage Tj = 25° C IF = 8 A, dIF/dt = 100 A/µs 7 V
FP
F
VFR = 1.1 x VF max
200 ns
AS Reverse recovery softness factor 0.4
2/7
Page 3
STTH806DTI Characteristics
Figure 1. Conduction losses versus average
current
P(W)
30
25
20
15
10
5
0
012345678910
δ = 0.05
δ = 0.1
δ = 0.2
I (A)
F(AV)
δ = 0.5
δ
=tp/T
δ = 1
T
tp
Figure 3. Relative variation of thermal
impedance junction to case versus pulse duration
Z/R
th(j-c) th(j-c)
1.0
0.8
δ = 0.5
0.6
0.4
δ = 0.2
δ = 0.1
0.2
Single pulse
0.0 1E-3 1E-2 1E-1 1E+0
t (s)
p
δ
=tp/T
T
tp
Figure 2. Forward voltage drop versus
forward current
I (A)
FM
100
(typical values)
10
1
012345678
T=125°C
j
T=125°C
j
(maximum values)
V (V)
FM
T=25°C
j
(maximum values)
Figure 4. Peak reverse recovery current
versus dI
I (A)
RM
9
V =400V
R
8
T=125°C
j
7
6
5
4
3
2
1
0
0 50 100 150 200 250 300 350 400 450 500
I =0.5 x I
F F(AV)
/dt (typical values)
F
I =2 x I
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
Figure 5. Reverse recovery time versus dIF/dt
(typical values)
t (ns)
rr
60
50
I =2 x I
40
30
20
10
0
0 50 100 150 200 250 300 350 400 450 500
F F(AV)
I=I
F F(AV)
dI /dt(A/µs)
F
I =0.5 x I
F F(AV)
V =400V
R
T=125°C
j
Figure 6. Reverse charges versus dIF/dt
(typical values)
Q (nC)
rr
140
V =400V
R
T=125°C
j
120
100
80
60
40
20
0
0 100 200 300 400 500
dI /dt(A/µs)
F
3/7
I =2 x I
F F(AV)
I=I
F F(AV)
I =0.5 x I
F F(AV)
Page 4
Characteristics STTH806DTI
Figure 7. Softness factor versus dIF/dt
(typical values)
S
0.6
I <2xI
F(AV)
F
V =400V
R
T=125°C
0.5
j
0.4
0.3
0.2
0.1
dI /dt(A/µs)
0.0
0 50 100 150 200 250 300 350 400 450 500
F
Figure 9. Transient peak forward voltage
versus dI
V (V)
FP
16
I=I
15
F F(AV)
T=125°C
j
14 13 12 11 10
9 8 7 6 5 4 3 2 1 0
0 50 100 150 200 250 300 350 400 450 500
/dt (typical values)
F
dI /dt(A/µs)
F
Figure 8. Relative variation of dynamic
parameters versus junction temperature (reference: T
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0 25 50 75 100 125
S
I
RM
T (°C)
j
= 125° C)
j
I=I
F F(AV)
V =400V
R
Reference:T =125°C
j
Figure 10. Forward recovery time versus dI
(typical values)
t (ns)
fr
200
180
160
140
120
100
80
60
40
20
0
0 100 200 300 400 500
dI /dt(A/µs)
F
I=I
F F(AV)
V =1.1 x V max.
FR F
T=125°C
j
F
/dt
4/7
Page 5
STTH806DTI Package information

2 Package information

● Epoxy meets UL94, V0
● Cooling method: C
● Recommended torque value: 0.4 to 0.6 Nm

Table 8. TO-220AC insulated dimensions

Dimensions
Ref.
Millimeters Inches
Min. Typ. Max. Min. Typ. Max.
A 15.20 15.90 0.598 0.625
B
Ø I
L
C
b2
a1 3.75 0.147
a2 13.00 14.00 0.511 0.551
B 10.00 10.40 0.393 0.409
F
b1 0.61 0.88 0.024 0.034
A
I4
b2 1.23 1.32 0.048 0.051
C 4.40 4.60 0.173 0.181
a1
l2
a2
c2
c1 0.49 0.70 0.019 0.027
c2 2.40 2.72 0.094 0.107
e 4.80 5.40 0.189 0.212
b1
e
M
F 6.20 6.60 0.244 0.259
c1
ØI 3.75 3.85 0.147 0.151
I4 15.80 16.40 16.80 0.622 0.646 0.661
L 2.65 2.95 0.104 0.116
l2 1.14 1.70 0.044 0.066
M2.60 0.102
In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com.
5/7
Page 6
Ordering information STTH806DTI

3 Ordering information

Table 9. Ordering information

Part number Marking Package Weight Base qty Delivery mode
STTH806DTI STTH806DTI TO-220AC 2.3 g 50 Tube

4 Revision history

Table 10. Revision history

Date Revision Changes
Oct-2003 2A Initial release
May-2004 3 Reformatted
29-Jun-2005 4
Corrections to typographical errors. No technical changes.
11-Jul-2007 5
Reformatted to current standards. Removed I parameter from Table 3: Absolute ratings (limiting
values).
PEAK
6/7
Page 7
STTH806DTI
Please Read Carefully:
Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries (“ST”) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice.
All ST products are sold pursuant to ST’s terms and conditions of sale.
Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein.
UNLESS OTHERWISE SET FORTH IN ST’S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT.
UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER’S OWN RISK.
Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST.
ST and the ST logo are trademarks or registered trademarks of ST in various countries.
Information in this document supersedes and replaces all information previously supplied.
The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners.
© 2007 STMicroelectronics - All rights reserved
STMicroelectronics group of companies
Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan -
Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America
www.st.com
7/7
Loading...